Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta

N. S. Kovalchuk; Ковальчук Н. С.; S. B. Lastovsky; Ластовский С. Б.; V. B. Odzhaev; Оджаев В. Б.; A. N.  Petlitsky; Петлицкий А. Н.; V. S. Prosolovich; Просолович В. С.; D. V. Shestovsky; Шестовский Д. В.; V. Yu. Yavid; Явид В. Ю.; Yu. N. Yankovsky; Янковский Ю. Н.

doi:10.31857/S0544126923600264

Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta

Authors: Kovalchuk N.S.¹, Lastovsky S.B.², Odzhaev V.B.³, Petlitsky A.N.¹, Prosolovich V.S.³, Shestovsky D.V.¹, Yavid V.Y.³, Yankovsky Y.N.³
Affiliations:
1. Open Joint Stock Company "INTEGRAL" - management company of the holding "INTEGRAL"
2. Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science
3. Belarusian State University
Issue: Vol 52, No 6 (2023)
Pages: 481-488
Section: ПРИБОРЫ
URL: https://journals.rcsi.science/0544-1269/article/view/231912
DOI: https://doi.org/10.31857/S0544126923600264
EDN: https://elibrary.ru/CKNJSW
ID: 231912

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Abstract

The results of studies of changes in the electrical parameters of p-i-n photodiodes manufactured on monocrystalline silicon wafers of p-type conductivity orientation (100) with ρ = 1000 Ohm cm, when irradiated with γ-quanta from a 60Co source, are presented. It has been established that as a result of irradiation of p-i-n photodiodes with doses up to 2·1015 quanta/cm2, the reverse dark current increases by more than an order of magnitude. However, the shape of the curve of the dependence of the current on the applied reverse voltage of irradiated p-i-n photodiodes does not change qualitatively, as for the original devices there are three regions with different dependences of current on voltage: sublinear, superlinear and linear, due to different mechanisms of generation-recombination processes in the depletion region of the p-n junction. The main reason for the increase in the reverse current of p-i-n photodiodes as a result of irradiation with γ-quanta is the formation of generation-recombination centers of radiation origin due to the condensation of primary radiation defects (vacancies and/or self-interstitial atoms) on technological residual structural defects formed during the growth of silicon single crystals, and during subsequent high-temperature treatments during the formation of devices.

Keywords

p-i-n photodiode, barrier capacitance, dark current, 60Co γ-quanta, radiation defects

References

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