Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology

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Abstract

This paper presents the results of hydrogen electron-cyclotron resonance (ECR) plasma in micro-electronics technology. Its effect on the radiation resistance of the IC and on the quality of the ohmic contact during the formation of UBM metallization is demonstrated. The devices obtained with the use of plasma ECR and without it are analyzed.

About the authors

E. A. Polushkin

JSC Molecular Electronics Research Institute; Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Email: epolushkin@niime.ru
Moscow, Zelenograd, 124460 Russia; Chernogolovka, Moscow oblast, 142432 Russia

S. V. Nefed’ev

JSC Molecular Electronics Research Institute

Email: epolushkin@niime.ru
Moscow, Zelenograd, 124460 Russia

A. V. Koval’chuk

Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia

O. A. Soltanovich

Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia

S. Yu. Shapoval

Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Author for correspondence.
Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia

References

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Copyright (c) 2023 Е.А. Полушкин, С.В. Нефедьев, А.В. Ковальчук, О.А. Солтанович, С.Ю. Шаповал

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