| Issue |
Section |
Title |
File |
| Vol 52, No 1 (2023) |
ДИАГНОСТИКА |
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy |
|
| Vol 52, No 2 (2023) |
ДИАГНОСТИКА |
SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits |
|
| Vol 52, No 1 (2023) |
ДИАГНОСТИКА |
Электрофизические характеристики и эмиссионные спектры плазмы тетрафторметана |
|
| Vol 52, No 1 (2023) |
ИСКУССТВЕННЫЙ ИНТЕЛЛЕКТ |
Искусственный интеллект никогда не заменит полностью человека |
|
| Vol 52, No 2 (2023) |
КВАНТОВЫЕ ТЕХНОЛОГИИ |
Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators |
|
| Vol 52, No 1 (2023) |
МОДЕЛИРОВАНИЕ ПРИБОРОВ |
Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect |
|
| Vol 52, No 2 (2023) |
ЛИТОГРАФИЯ |
Cross Sections of Scattering Processes in Electron-Beam Lithography |
|
| Vol 52, No 1 (2023) |
МОДЕЛИРОВАНИЕ ТЕХНОЛОГИЧЕСКИХ ПРОЦЕССОВ |
Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2 |
|
| Vol 52, No 1 (2023) |
МОДЕЛИРОВАНИЕ ТЕХНОЛОГИЧЕСКИХ ПРОЦЕССОВ |
Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора |
|
| Vol 52, No 2 (2023) |
ПРИБОРЫ |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
|
| Vol 52, No 1 (2023) |
ПРИБОРЫ |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
|
| Vol 52, No 1 (2023) |
ПРИБОРЫ |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
|
| Vol 52, No 2 (2023) |
ТЕХНОЛОГИЯ |
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture |
|
| Vol 52, No 2 (2023) |
ТЕХНОЛОГИЯ |
Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide |
|
| Vol 52, No 1 (2023) |
ТЕХНОЛОГИЯ |
Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He |
|
| Vol 52, No 3 (2023) |
ДИАГНОСТИКА |
Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates |
|
| Vol 52, No 4 (2023) |
КВАНТОВЫЕ ТЕХНОЛОГИИ |
Tomography of Detectors Taking Dead Time into Account |
|
| Vol 52, No 5 (2023) |
ДИАГНОСТИКА |
Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane |
|
| Vol 52, No 3 (2023) |
КВАНТОВЫЕ ТЕХНОЛОГИИ |
Precise Tomography of Qudits |
|
| Vol 52, No 4 (2023) |
МОДЕЛИРОВАНИЕ |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
|
| Vol 52, No 3 (2023) |
КВАНТОВЫЕ ТЕХНОЛОГИИ |
Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots |
|
| Vol 52, No 5 (2023) |
ЛИТОГРАФИЯ |
Protective Freely Hanging Films for Projection Lithography Installations in the Extreme UV Range |
|
| Vol 52, No 4 (2023) |
МОДЕЛИРОВАНИЕ |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |
|
| Vol 52, No 5 (2023) |
МОДЕЛИРОВАНИЕ |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
|
| Vol 52, No 5 (2023) |
МОДЕЛИРОВАНИЕ |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure |
|
| Vol 52, No 3 (2023) |
МОДЕЛИРОВАНИЕ |
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
|
| Vol 52, No 4 (2023) |
НАДЕЖНОСТЬ |
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
|
| Vol 52, No 3 (2023) |
МОДЕЛИРОВАНИЕ |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
|
| Vol 52, No 5 (2023) |
ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ |
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma |
|
| Vol 52, No 5 (2023) |
ПАМЯТЬ |
Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements |
|
| Vol 52, No 4 (2023) |
НАДЕЖНОСТЬ |
Single Event Displacement Effects in a VLSI |
|
| Vol 52, No 5 (2023) |
ПРИБОРЫ |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
|
| Vol 52, No 3 (2023) |
МЭМС–УСТРОЙСТВА |
Fast Electrochemical Micropump for Portable Drug Delivery Module |
|
| Vol 52, No 4 (2023) |
ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ |
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures |
|
| Vol 52, No 4 (2023) |
ПРИБОРЫ |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |
|
| Vol 52, No 3 (2023) |
ТЕХНОЛОГИИ |
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |
|
| Vol 52, No 4 (2023) |
ПРИБОРЫ |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |
|
| Vol 52, No 3 (2023) |
УСТРОЙСТВА |
Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data |
|
| Vol 52, No 5 (2023) |
ПРИБОРЫ |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |
|
| Vol 52, No 4 (2023) |
СЕНСОРЫ |
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation |
|
| Vol 52, No 5 (2023) |
ТЕХНОЛОГИИ |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |
|
| Vol 52, No 4 (2023) |
ТЕХНОЛОГИИ |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |
|
| Vol 52, No 4 (2023) |
ТЕХНОЛОГИИ |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition |
|
| Vol 52, No 6 (2023) |
ДИАГНОСТИКА |
PROBE AND SPECTRAL DIAGNOSTICS OF PLASMA GAS ENVIRONMENT: BCl3-Cl2 |
|
| Vol 52, No 6 (2023) |
МЭМС-УСТРОЙСТВА |
MEMS SWITCH BASED ON CANTILEVER WITH INCREASED CONTACT FORCE |
|
| Vol 52, No 6 (2023) |
МОДЕЛИРОВАНИЕ |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
|
| Vol 52, No 6 (2023) |
МОДЕЛИРОВАНИЕ |
Performance calculation for a MEMS switch with «floating» electrode |
|
| Vol 52, No 6 (2023) |
ПРИБОРЫ |
Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta |
|
| Vol 52, No 6 (2023) |
ПРИБОРЫ |
OPTICALLY PUMPED BIPOLAR TRANSISTOR |
|
| Vol 52, No 6 (2023) |
ПРИБОРЫ |
Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain |
|
| Vol 52, No 6 (2023) |
ПРИБОРЫ |
Design of integrated voltage multipliers using standard CMOS technologies |
|
