| Issue |
Title |
File |
| Vol 53, No 2 (2019) |
Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides |
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Novitskii A.P., Serhiienko I.A., Novikov S.V., Kuskov K.V., Leybo D.V., Pankratova D.S., Burkov A.T., Khovaylo V.V.
|
| Vol 52, No 6 (2018) |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
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|
Ivanova M.M., Kachemtsev A.N., Mikhaylov A.N., Filatov D.O., Gorshkov A.P., Volkova N.S., Chalkov V.Y., Shengurov V.G.
|
| Vol 50, No 12 (2016) |
Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation |
|
|
Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
| Vol 53, No 6 (2019) |
Effect of Sample-Shape Imperfection on Uncertainty in Measurements of the Thermal-Conductivity by the Laser-Flash Method |
|
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Asach A.V., Isachenko G.N., Novotelnova A.V., Fomin V.E., Samusevich K.L., Tkhorgevskii I.L.
|
| Vol 53, No 13 (2019) |
Effect of Spark Plasma Sintering Temperature on Thermoelectric Properties of Grained Bi1.9Gd0.1Te3 Compound |
|
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Yapryntsev M.N., Vasil’ev A.E., Ivanov O.N., Zhezhu M.V.
|
| Vol 51, No 3 (2017) |
Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals |
|
|
Nemov S.A., Ulashkevich Y.V.
|
| Vol 50, No 7 (2016) |
Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3 |
|
|
Kudryashov A.A., Kytin V.G., Lunin R.A., Kulbachinskii V.A., Banerjee A.
|
| Vol 52, No 2 (2018) |
Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics |
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|
Shimanskii A.F., Pavlyuk T.O., Kopytkova S.A., Filatov R.A., Gorodishcheva A.N.
|
| Vol 52, No 8 (2018) |
Effect of the Ag Nanoparticle Concentration in TiO2–Ag Functional Coatings on the Characteristics of GaInP/GaAs/Ge Photoconverters |
|
|
Lunin L.S., Lunina M.L., Kravtsov A.A., Sysoev I.A., Blinov A.V., Pashchenko A.S.
|
| Vol 50, No 7 (2016) |
Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors |
|
|
Kyuregyan A.S., Gorbatyuk A.V., Ivanov B.V.
|
| Vol 51, No 11 (2017) |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
|
|
Gorshkov A.P., Volkova N.S., Voronin P.G., Zdoroveyshchev A.V., Istomin L.A., Pavlov D.A., Usov Y.V., Levichev S.B.
|
| Vol 50, No 10 (2016) |
Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells |
|
|
Novikov G.F., Tsai W., Bocharov K.V., Rabenok E.V., Jeng M., Chang L., Feng W., Ao J., Sun Y.
|
| Vol 52, No 14 (2018) |
Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode |
|
|
Mozharov A.M., Vasiliev A.A., Komissarenko F.E., Bolshakov A.D., Sapunov G.A., Fedorov V.V., Cirlin G.E., Mukhin I.S.
|
| Vol 53, No 3 (2019) |
Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions |
|
|
Novikov G.F., Rabenok E.V., Orishina P.S., Gapanovich M.V., Odin I.N.
|
| Vol 52, No 6 (2018) |
Effect of the Dehydrogenation of Graphane on Its Mechanical and Electronic Properties |
|
|
Openov L.A., Podlivaev A.I.
|
| Vol 50, No 1 (2016) |
Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer |
|
|
Rykov A.V., Dorokhin M.V., Malysheva E.I., Demina P.B., Vikhrova O.V., Zdoroveishev A.V.
|
| Vol 53, No 1 (2019) |
Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor |
|
|
Kulikov N.A., Popov V.D.
|
| Vol 51, No 3 (2017) |
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers |
|
|
Kozlovski V.V., Lebedev A.A., Strel’chuk A.M., Davidovskaya K.S., Vasil’ev A.E., Makarenko L.F.
|
| Vol 50, No 2 (2016) |
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties |
|
|
Kalyadin A.E., Sobolev N.A., Strel’chuk A.M., Aruev P.N., Zabrodskiy V.V., Shek E.I.
|
| Vol 53, No 2 (2019) |
Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent |
|
|
Grebenshchikova E.A., Sidorov V.G., Shutaev V.A., Yakovlev Y.P.
|
| Vol 50, No 10 (2016) |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
|
|
Tsatsulnikov A.F., Lundin V.W., Zavarin E.E., Yagovkina M.A., Sakharov A.V., Usov S.O., Zemlyakov V.E., Egorkin V.I., Bulashevich K.A., Karpov S.Y., Ustinov V.M.
|
| Vol 52, No 15 (2018) |
Effect of the Plasma Functionalization of Carbon Nanotubes on the Formation of a Carbon Nanotube–Nickel Oxide Composite Electrode Material |
|
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Alekseyev A.V., Lebedev E.A., Gavrilin I.M., Kitsuk E.P., Ryazanov R.M., Dudin A.A., Polokhin A.A., Gromov D.G.
|
| Vol 53, No 12 (2019) |
Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures |
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|
Ataeva S.U., Mekhtieva S.I., Isaev A.I., Garibova S.N., Huseynova A.S.
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| Vol 52, No 6 (2018) |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
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Malin T.V., Milakhin D.S., Mansurov V.G., Galitsyn Y.G., Kozhuhov A.S., Ratnikov V.V., Smirnov A.N., Davydov V.Y., Zhuravlev K.S.
|
| Vol 51, No 13 (2017) |
Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics |
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Vigdorovich E.N., Ermoshin I.G.
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