| Issue |
Title |
File |
| Vol 50, No 11 (2016) |
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence |
|
|
Kosarev A.N., Chaldyshev V.V., Preobrazhenskii V.V., Putyato M.A., Semyagin B.R.
|
| Vol 53, No 4 (2019) |
Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures |
|
|
Nabiullin I.R., Gadiev R.M., Lachinov A.N.
|
| Vol 51, No 1 (2017) |
Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate |
|
|
Nekorkin S.M., Zvonkov B.N., Baidus N.V., Dikareva N.V., Vikhrova O.V., Afonenko A.A., Ushakov D.V.
|
| Vol 51, No 12 (2017) |
Effect of Ag in CdSe thin films prepared using thermal evaporation |
|
|
Santhosh T.C., Bangera K.V., Shivakumar G.K.
|
| Vol 51, No 8 (2017) |
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) |
|
|
Lebedev M.V., Lvova T.V., Pavlov S.I., Sedova I.V.
|
| Vol 50, No 8 (2016) |
Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si |
|
|
Karabeshkin K.V., Karaseov P.A., Titov A.I.
|
| Vol 51, No 6 (2017) |
Effect of anion and cation substitution in tungsten disulfide and tungsten diselenide on conductivity and thermoelectric power |
|
|
Yakovleva G.E., Romanenko A.I., Berdinsky A.S., Kuznetsov V.A., Ledneva A.Y., Artemkina S.B., Fedorov V.E.
|
| Vol 53, No 16 (2019) |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
|
|
Sakharov A.V., Kaliteevskii M.A., Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Tsatsulnikov A.F., Lundin W.V., Rodin S.N., Usov S.O., Evtikhiev V.P.
|
| Vol 53, No 8 (2019) |
Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures |
|
|
Lunina M.L., Lunin L.S., Alfimova D.L., Pashchenko A.S., Danilina E.M., Nefedov V.V.
|
| Vol 52, No 7 (2018) |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
|
|
Tereshchenko A.N., Korolev D.S., Mikhaylov A.N., Belov A.I., Nikolskaya A.A., Pavlov D.A., Tetelbaum D.I., Steinman E.A.
|
| Vol 50, No 5 (2016) |
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide |
|
|
Il’in A.S., Fantina N.P., Martyshov M.N., Forsh P.A., Chizhov A.S., Rumyantseva M.N., Gaskov A.M., Kashkarov P.K.
|
| Vol 52, No 6 (2018) |
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |
|
|
Kalinkin I.P., Kukushkin S.A., Osipov A.V.
|
| Vol 52, No 9 (2018) |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
|
|
Seredin P.V., Lenshin A.S., Fedyukin A.V., Goloshchapov D.L., Lukin A.N., Arsentyev I.N., Zhabotinsky A.V.
|
| Vol 50, No 7 (2016) |
Effect of coulomb correlations on luminescence and absorption in compensated semiconductors |
|
|
Bogoslovskiy N.A., Petrov P.V., Ivánov Y.L., Averkiev N.S., Tsendin K.D.
|
| Vol 52, No 7 (2018) |
Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency |
|
|
Bochkareva N.I., Shreter Y.G.
|
| Vol 52, No 8 (2018) |
Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes |
|
|
Ionychev V.K., Shesterkina A.A.
|
| Vol 51, No 6 (2017) |
Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering |
|
|
Kobziev V.F., Zakirova R.M., Kostenkov N.V., Krylov P.N., Fedotova I.V.
|
| Vol 53, No 13 (2019) |
Effect of Deposition Time on Structural, Morphological and Optical Properties of PVA Capped SnS Films Grown by CBD Process |
|
|
Devi P.M., Reddy G.P., Reddy K.T.
|
| Vol 52, No 2 (2018) |
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers |
|
|
Sobolev M.M., Soldatenkov F.Y.
|
| Vol 51, No 7 (2017) |
Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals |
|
|
Abdullayev N.A., Jafarli K.M., Aliguliyeva K.V., Aliyeva L.N., Kahramanov S.S., Nemov S.A.
|
| Vol 51, No 11 (2017) |
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures |
|
|
Degtyarev V.E., Khazanova S.V., Konakov A.A.
|
| Vol 51, No 8 (2017) |
Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions |
|
|
Gavrilin I.M., Gromov D.G., Dronov A.A., Dubkov S.V., Volkov R.L., Trifonov A.Y., Borgardt N.I., Gavrilov S.A.
|
| Vol 53, No 4 (2019) |
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes |
|
|
Dobrov V.A., Kozlovski V.V., Mescheryakov A.V., Usychenko V.G., Chernova A.S., Shabunina E.I., Shmidt N.M.
|
| Vol 52, No 7 (2018) |
Effect of Electron–Phonon Interaction on the Conductivity and Work Function of Epitaxial Graphene |
|
|
Davydov S.Y.
|
| Vol 51, No 9 (2017) |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
|
|
Danilov L.V., Mikhailova M.P., Andreev I.A., Zegrya G.G.
|
| 226 - 250 of 1443 Items |
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