| Issue |
Title |
File |
| Vol 53, No 4 (2019) |
Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device |
|
|
Jyoti Chaudhary ., Choudhary S., Negi C.M., Gupta S.K., Verma A.S.
|
| Vol 51, No 13 (2017) |
Electrical Conductivity of Film Composites Based on Polyvinyledene Fluoride with Carbon Nanotubes |
|
|
Solnyshkin A.V., Kislova I.L., Belov A.N., Sysa A.V., Stroganov A.A., Shevjakov V.I., Silibin M.V., Mihalchan A.A., Lysenko A.A.
|
| Vol 50, No 8 (2016) |
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma |
|
|
Abdullin K.A., Gabdullin M.T., Gritsenko L.V., Ismailov D.V., Kalkozova Z.K., Kumekov S.E., Mukash Z.O., Sazonov A.Y., Terukov E.I.
|
| Vol 50, No 9 (2016) |
Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors |
|
|
Kaminskii V.V., Kazanin M.M., Romanova M.V., Kamenskaya G.A., Sharenkova N.V.
|
| Vol 52, No 9 (2018) |
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions |
|
|
Orletskyi I.G., Ilashchuk M.I., Solovan M.N., Maryanchuk P.D., Parfenyuk O.A., Maistruk E.V., Nichyi S.V.
|
| Vol 51, No 12 (2017) |
Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode |
|
|
Padma R., Rajagopal Reddy V.
|
| Vol 51, No 2 (2017) |
Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors |
|
|
Sherchenkov A.A., Kozyukhin S.A., Lazarenko P.I., Babich A.V., Bogoslovskiy N.A., Sagunova I.V., Redichev E.N.
|
| Vol 52, No 7 (2018) |
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon |
|
|
Parkhomenko H.P., Solovan M.N., Maryanchuk P.D.
|
| Vol 52, No 12 (2018) |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
|
|
Alekseev P.A., Dunaevskiy M.S., Mikhailov A.O., Lebedev S.P., Lebedev A.A., Ilkiv I.V., Khrebtov A.I., Bouravleuv A.D., Cirlin G.E.
|
| Vol 52, No 12 (2018) |
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation |
|
|
Ilin A.S., Matsukatova A.N., Forsh P.A., Vygranenko Y.
|
| Vol 51, No 6 (2017) |
Electrical properties of ZnSe crystals doped with transition elements |
|
|
Nitsuk Y.A., Vaksman Y.F.
|
| Vol 53, No 13 (2019) |
Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds |
|
|
Voronin A.I., Serhiienko I.A., Ashim Y.Z., Kurichenko V.L., Novitskii A.P., Inerbaev T.M., Umetsu R., Khovaylo V.V.
|
| Vol 52, No 12 (2018) |
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection |
|
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
| Vol 52, No 2 (2018) |
Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures |
|
|
Kažukauskas V., Garbačauskas R., Savicki S.
|
| Vol 52, No 9 (2018) |
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures |
|
|
Orlov M.L., Volkova N.S., Ivina N.L., Orlov L.K.
|
| Vol 51, No 9 (2017) |
Electric-field sensor based on a double quantum dot in a microcavity |
|
|
Tsukanov A.V., Chekmachev V.G.
|
| Vol 50, No 2 (2016) |
Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries |
|
|
Astrova E.V., Li G.V., Rumyantsev A.M., Zhdanov V.V.
|
| Vol 51, No 13 (2017) |
Electrochemical Deposition of Permalloy Films for Magneto-Semiconductor Microsystems |
|
|
Amelichev V.V., Polomoshnov S.A., Nikolaeva N.N., Tikhonov R.D., Kupriyanova M.A.
|
| Vol 50, No 7 (2016) |
Electrochemical lithiation of silicon with varied crystallographic orientation |
|
|
Astrova E.V., Rumyantsev A.M., Li G.V., Nashchekin A.V., Kazantsev D.Y., Ber B.Y., Zhdanov V.V.
|
| Vol 51, No 7 (2017) |
Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
|
|
Kretova M.A., Korzhuev M.A., Avilov E.S.
|
| Vol 50, No 11 (2016) |
Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands |
|
|
Shmagin V.B., Vdovichev S.N., Morozova E.E., Novikov A.V., Shaleev M.V., Shengurov D.V., Krasilnik Z.F.
|
| Vol 53, No 1 (2019) |
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |
|
|
Mikhailova M.P., Ivanov E.V., Danilov L.V., Levin R.V., Andreev I.A., Kunitsyna E.V., Yakovlev Y.P.
|
| Vol 51, No 2 (2017) |
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K |
|
|
Mynbaev K.D., Bazhenov N.L., Semakova A.A., Mikhailova M.P., Stoyanov N.D., Kizhaev S.S., Molchanov S.S., Astakhova A.P., Chernyaev A.V., Lipsanen H., Bougrov V.E.
|
| Vol 50, No 12 (2016) |
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers |
|
|
Baidakova N.A., Novikov A.V., Shaleev M.V., Yurasov D.V., Morozova E.E., Shengurov D.V., Krasilnik Z.F.
|
| Vol 50, No 2 (2016) |
Electroluminescence properties of LEDs based on electron-irradiated p-Si |
|
|
Sobolev N.A., Shtel’makh K.F., Kalyadin A.E., Aruev P.N., Zabrodskiy V.V., Shek E.I., Yang D.
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