| Issue |
Title |
File |
| Vol 53, No 1 (2019) |
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure |
|
|
Kuzmichev N.D., Vasyutin M.A.
|
| Vol 53, No 8 (2019) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
|
|
Tyschenko I.E., Voelskow M., Mikhaylov A.N., Tetelbaum D.I.
|
| Vol 52, No 13 (2018) |
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature |
|
|
Ushanov V.I., Chaldyshev V.V., Preobrazhenskii V.V., Putyato M.A., Semyagin B.R.
|
| Vol 51, No 1 (2017) |
Diffusion of interstitial magnesium in dislocation-free silicon |
|
|
Shuman V.B., Lavrent’ev A.A., Astrov Y.A., Lodygin A.N., Portsel L.M.
|
| Vol 51, No 10 (2017) |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
|
|
Tyschenko I.E., Cherkov A.G.
|
| Vol 53, No 5 (2019) |
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode |
|
|
Melnikov A.A., Tarasov O.M., Chekov A.V., Bashkin M.A.
|
| Vol 52, No 14 (2018) |
Diode Lasers with Near-Surface Active Region |
|
|
Payusov A.S., Gordeev N.Y., Serin A.A., Kulagina M.M., Kalyuzhnyy N.A., Mintairov S.A., Maximov M.V., Zhukov A.E.
|
| Vol 52, No 16 (2018) |
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices |
|
|
Seyidov M.Y., Suleymanov R.A., Şale Y., Kandemir B.B.
|
| Vol 52, No 5 (2018) |
Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine |
|
|
Smolyarova T.E., Lukyanenko A.V., Tarasov A.S., Sokolov A.E.
|
| Vol 50, No 9 (2016) |
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector |
|
|
Chatbouri S., Troudi M., Sghaier N., Kalboussi A., Aimez V., Drouin D., Souifi A.
|
| Vol 53, No 3 (2019) |
Discovery of III–V Semiconductors: Physical Properties and Application |
|
|
Mikhailova M.P., Moiseev K.D., Yakovlev Y.P.
|
| Vol 53, No 2 (2019) |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
|
|
Sobolev N.A., Kalyadin A.E., Sakharov V.I., Serenkov I.T., Shek E.I., Parshin E.O., Melesov N.S., Simakin C.G.
|
| Vol 52, No 7 (2018) |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
|
|
Emtsev V.V., Gushchina E.V., Petrov V.N., Tal’nishnih N.A., Chernyakov A.E., Shabunina E.I., Shmidt N.M., Usikov A.S., Kartashova A.P., Zybin A.A., Kozlovski V.V., Kudoyarov M.F., Saharov A.V., Oganesyan A.G., Poloskin D.S., Lundin V.V.
|
| Vol 53, No 6 (2019) |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
|
|
Yarykin N., Shuman V.B., Portsel L.M., Lodygin A.N., Astrov Y.A., Abrosimov N.V., Weber J.
|
| Vol 53, No 11 (2019) |
Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |
|
|
Titov A.I., Karabeshkin K.V., Karaseov P.A., Struchkov A.I.
|
| Vol 51, No 10 (2017) |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
|
|
Dikareva N.V., Zvonkov B.N., Vikhrova O.V., Nekorkin S.M., Aleshkin V.Y., Dubinov A.A.
|
| Vol 52, No 14 (2018) |
Dynamic Compression of Spinor Exciton-Polariton Systems in Semiconductor Microcavities |
|
|
Demenev A.A., Brichkin A.S., Gavrilov S.S., Gippius N.A., Kulakovskii V.D.
|
| Vol 50, No 11 (2016) |
Dynamic generation of spin-wave currents in hybrid structures |
|
|
Lyapilin I.I., Okorokov M.S.
|
| Vol 50, No 8 (2016) |
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer |
|
|
Sergeev V.A., Hodakov A.M.
|
| Vol 52, No 8 (2018) |
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation |
|
|
Elistratova M.A., Poloskin D.S., Goryachev D.N., Zakharova I.B., Sreseli O.M.
|
| Vol 51, No 4 (2017) |
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions |
|
|
Pashkovskii A.B.
|
| Vol 50, No 11 (2016) |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
|
|
Shamirzaev V.T., Gaisler V.A., Shamirzaev T.S.
|
| Vol 53, No 12 (2019) |
Edge Doping in Graphene Devices on SiO2 Substrates |
|
|
Vasilyeva G.Y., Smirnov D., Vasilyev Y.B., Greshnov A.A., Haug R.J.
|
| Vol 53, No 8 (2019) |
Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals |
|
|
Avanesyan V.T., Piskovatskova I.V., Stozharov V.M.
|
| Vol 52, No 13 (2018) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
|
|
Seredin P.V., Leiste H., Beltiukov A.N., Arsentyev I.N., Mizerov A.M., Khudyakov Y.Y., Lenshin A.S., Kondrashin M.A., Zolotukhin D.S., Goloshchapov D.L., Rinke M.
|
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