| Issue |
Title |
File |
| Vol 51, No 11 (2017) |
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films |
|
|
Akimov A.N., Klimov A.E., Suprun S.P., Epov V.S.
|
| Vol 53, No 2 (2019) |
Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering |
|
|
Zaitsev S.V., Vaschilin V.S., Kolesnik V.V., Limarenko M.V., Prokhorenkov D.S., Evtushenko E.I.
|
| Vol 52, No 10 (2018) |
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) |
|
|
Undalov Y.K., Terukov E.I., Trapeznikova I.N.
|
| Vol 50, No 3 (2016) |
Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers |
|
|
Yugov A.A., Malahov S.S., Donskov A.A., Duhnovskii M.P., Knyazev S.N., Kozlova Y.P., Yugova T.G., Belogorokhov I.A.
|
| Vol 50, No 11 (2016) |
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn |
|
|
Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Drozdov M.N.
|
| Vol 53, No 8 (2019) |
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition |
|
|
Uvarov A.V., Zelentsov K.S., Gudovskikh A.S.
|
| Vol 52, No 5 (2018) |
Effect of Transverse Electric Field on Polariton Reflectance Spectra of Wide Quantum Wells |
|
|
Loginov D.K., Donets A.V.
|
| Vol 50, No 2 (2016) |
Effect of transverse electric field on the longitudinal current–voltage characteristic of graphene superlattice |
|
|
Kryuchkov S.V., Kukhar’ E.I.
|
| Vol 50, No 8 (2016) |
Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure |
|
|
Gadzhialiev M.M., Pirmagomedov Z.S., Efendieva T.N.
|
| Vol 53, No 5 (2019) |
Effective Bi–Sb Crystals for Thermoelectric Cooling at Temperatures of T ≲ 180 K |
|
|
Sidorenko N.A., Dashevsky Z.M.
|
| Vol 53, No 12 (2019) |
Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb1 –xAgxS Solid Solutions |
|
|
Sadovnikov S.I.
|
| Vol 51, No 8 (2017) |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
|
|
Lebedev A.A., Ber B.Y., Oganesyan G.A., Belov S.V., Lebedev S.P., Nikitina I.P., Seredova N.V., Shakhov L.V., Kozlovski V.V.
|
| Vol 51, No 10 (2017) |
Effects of local photoexcitation of high-concentration charge carriers in silicon |
|
|
Musaev A.M.
|
| Vol 50, No 10 (2016) |
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen |
|
|
Bochkareva N.I., Sheremet I.A., Shreter Y.G.
|
| Vol 50, No 8 (2016) |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
|
|
Pankin D.V., Smirnov M.B., Davydov V.Y., Smirnov A.N., Zavarin E.E., Lundin W.V.
|
| Vol 50, No 4 (2016) |
Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire |
|
|
El Ghazi H., Jorio A.
|
| Vol 52, No 2 (2018) |
Electrical Activity of Extended Defects in Multicrystalline Silicon |
|
|
Pescherova S.M., Yakimov E.B., Nepomnyashchikh A.I., Pavlova L.A., Feklisova O.V., Presnyakov R.V.
|
| Vol 53, No 4 (2019) |
Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols |
|
|
Bubenov S.S., Dorofeev S.G., Kononov N.N., Davydova D.V.
|
| Vol 53, No 7 (2019) |
Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures |
|
|
Guseynov R.R., Tanriverdiyev V.A., Belenky G.L., Kipshidze G., Aliyeva Y.N., Aliguliyeva K.V., Alizade E.G., Ahmadova K.N., Abdullayev N.A., Mamedov N.T., Zverev V.N.
|
| Vol 50, No 8 (2016) |
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures |
|
|
Solovan M.N., Mostovyi A.I., Brus V.V., Maistruk E.V., Maryanchuk P.D.
|
| Vol 50, No 12 (2016) |
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface |
|
|
Koryazhkina M.N., Tikhov S.V., Gorshkov O.N., Kasatkin A.P., Antonov I.N.
|
| Vol 50, No 3 (2016) |
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction |
|
|
Orletsky I.G., Ilashchuk M.I., Brus V.V., Marianchuk P.D., Solovan M.M., Kovalyuk Z.D.
|
| Vol 53, No 2 (2019) |
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates |
|
|
Galiev G.B., Klimov E.A., Klochkov A.N., Kopylov V.B., Pushkarev S.S.
|
| Vol 51, No 9 (2017) |
Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation |
|
|
Ponomarev D.S., Khabibullin R.A., Yachmenev A.E., Pavlov A.Y., Slapovskiy D.N., Glinskiy I.A., Lavrukhin D.V., Ruban O.A., Maltsev P.P.
|
| Vol 52, No 3 (2018) |
Electrical Breakdown in Pure n- and p-Si |
|
|
Bannaya V.F., Nikitina E.V.
|
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