| 期 |
标题 |
文件 |
| 卷 53, 编号 2 (2019) |
Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides |
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Novitskii A., Serhiienko I., Novikov S., Kuskov K., Leybo D., Pankratova D., Burkov A., Khovaylo V.
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| 卷 52, 编号 6 (2018) |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
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Ivanova M., Kachemtsev A., Mikhaylov A., Filatov D., Gorshkov A., Volkova N., Chalkov V., Shengurov V.
|
| 卷 50, 编号 12 (2016) |
Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation |
|
|
Puzanov A., Obolenskiy S., Kozlov V.
|
| 卷 53, 编号 6 (2019) |
Effect of Sample-Shape Imperfection on Uncertainty in Measurements of the Thermal-Conductivity by the Laser-Flash Method |
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Asach A., Isachenko G., Novotelnova A., Fomin V., Samusevich K., Tkhorgevskii I.
|
| 卷 53, 编号 13 (2019) |
Effect of Spark Plasma Sintering Temperature on Thermoelectric Properties of Grained Bi1.9Gd0.1Te3 Compound |
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Yapryntsev M., Vasil’ev A., Ivanov O., Zhezhu M.
|
| 卷 51, 编号 3 (2017) |
Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals |
|
|
Nemov S., Ulashkevich Y.
|
| 卷 50, 编号 7 (2016) |
Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3 |
|
|
Kudryashov A., Kytin V., Lunin R., Kulbachinskii V., Banerjee A.
|
| 卷 52, 编号 2 (2018) |
Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics |
|
|
Shimanskii A., Pavlyuk T., Kopytkova S., Filatov R., Gorodishcheva A.
|
| 卷 52, 编号 8 (2018) |
Effect of the Ag Nanoparticle Concentration in TiO2–Ag Functional Coatings on the Characteristics of GaInP/GaAs/Ge Photoconverters |
|
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Lunin L., Lunina M., Kravtsov A., Sysoev I., Blinov A., Pashchenko A.
|
| 卷 50, 编号 7 (2016) |
Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors |
|
|
Kyuregyan A., Gorbatyuk A., Ivanov B.
|
| 卷 51, 编号 11 (2017) |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
|
|
Gorshkov A., Volkova N., Voronin P., Zdoroveyshchev A., Istomin L., Pavlov D., Usov Y., Levichev S.
|
| 卷 50, 编号 10 (2016) |
Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells |
|
|
Novikov G., Tsai W., Bocharov K., Rabenok E., Jeng M., Chang L., Feng W., Ao J., Sun Y.
|
| 卷 52, 编号 14 (2018) |
Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode |
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Mozharov A., Vasiliev A., Komissarenko F., Bolshakov A., Sapunov G., Fedorov V., Cirlin G., Mukhin I.
|
| 卷 53, 编号 3 (2019) |
Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions |
|
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Novikov G., Rabenok E., Orishina P., Gapanovich M., Odin I.
|
| 卷 52, 编号 6 (2018) |
Effect of the Dehydrogenation of Graphane on Its Mechanical and Electronic Properties |
|
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Openov L., Podlivaev A.
|
| 卷 50, 编号 1 (2016) |
Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer |
|
|
Rykov A., Dorokhin M., Malysheva E., Demina P., Vikhrova O., Zdoroveishev A.
|
| 卷 53, 编号 1 (2019) |
Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor |
|
|
Kulikov N., Popov V.
|
| 卷 51, 编号 3 (2017) |
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers |
|
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Kozlovski V., Lebedev A., Strel’chuk A., Davidovskaya K., Vasil’ev A., Makarenko L.
|
| 卷 50, 编号 2 (2016) |
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties |
|
|
Kalyadin A., Sobolev N., Strel’chuk A., Aruev P., Zabrodskiy V., Shek E.
|
| 卷 53, 编号 2 (2019) |
Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent |
|
|
Grebenshchikova E., Sidorov V., Shutaev V., Yakovlev Y.
|
| 卷 50, 编号 10 (2016) |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
|
|
Tsatsulnikov A., Lundin V., Zavarin E., Yagovkina M., Sakharov A., Usov S., Zemlyakov V., Egorkin V., Bulashevich K., Karpov S., Ustinov V.
|
| 卷 52, 编号 15 (2018) |
Effect of the Plasma Functionalization of Carbon Nanotubes on the Formation of a Carbon Nanotube–Nickel Oxide Composite Electrode Material |
|
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Alekseyev A., Lebedev E., Gavrilin I., Kitsuk E., Ryazanov R., Dudin A., Polokhin A., Gromov D.
|
| 卷 53, 编号 12 (2019) |
Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures |
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Ataeva S., Mekhtieva S., Isaev A., Garibova S., Huseynova A.
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| 卷 52, 编号 6 (2018) |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
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Malin T., Milakhin D., Mansurov V., Galitsyn Y., Kozhuhov A., Ratnikov V., Smirnov A., Davydov V., Zhuravlev K.
|
| 卷 51, 编号 13 (2017) |
Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics |
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Vigdorovich E., Ermoshin I.
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| 276 - 300 的 1443 信息 |
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