| Issue |
Title |
File |
| Vol 53, No 14 (2019) |
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates |
|
|
Timoshnev S.N., Mizerov A.M., Lapushkin M.N., Kukushkin S.A., Bouravleuv A.D.
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| Vol 51, No 5 (2017) |
Electronic structure of single-layer superlattices (GeC)1(SiC)1, (SnC)1(SiC)1, and (SnC)1(GeC)1 |
|
|
Basalaev Y.M., Malysheva E.N.
|
| Vol 53, No 3 (2019) |
Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells |
|
|
Vinichenko A.N., Safonov D.A., Kargin N.I., Vasil’evskii I.S.
|
| Vol 52, No 6 (2018) |
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |
|
|
Evstigneev V.S., Varavin V.S., Chilyasov A.V., Remesnik V.G., Moiseev A.N., Stepanov B.S.
|
| Vol 51, No 2 (2017) |
Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction |
|
|
Avakyants L.P., Aslanyan A.E., Bokov P.Y., Polozhentsev K.Y., Chervyakov A.V.
|
| Vol 53, No 1 (2019) |
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe |
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|
Shvets V.A., Azarov I.A., Marin D.V., Yakushev M.V., Rykhlitsky S.V.
|
| Vol 53, No 3 (2019) |
EMF Induced in a p–n Junction under a Strong Microwave Field and Light |
|
|
Gulyamov G., Erkaboev U.I., Sharibaev N.Y., Gulyamov A.G.
|
| Vol 53, No 16 (2019) |
Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential |
|
|
Grigorieva N.R., Sel’kin A.V.
|
| Vol 53, No 10 (2019) |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
|
|
Andreev B.A., Lobanov D.N., Krasil’nikova L.V., Bushuykin P.A., Yablonskiy A.N., Novikov A.V., Davydov V.Y., Yunin P.A., Kalinnikov M.I., Skorohodov E.V., Krasil’nik Z.F.
|
| Vol 52, No 1 (2018) |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
|
|
Blokhin S.A., Bobrov M.A., Blokhin A.A., Kuzmenkov A.G., Vasil’ev A.P., Zadiranov Y.M., Evropeytsev E.A., Sakharov A.V., Ledentsov N.N., Karachinsky L.Y., Ospennikov A.M., Maleev N.A., Ustinov V.M.
|
| Vol 53, No 8 (2019) |
Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate |
|
|
Aleshin A.N., Bugaev A.S., Ruban O.A., Saraikin V.V., Tabachkova N.Y., Shchetinin I.V.
|
| Vol 51, No 11 (2017) |
Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator |
|
|
Khomitsky D.V., Lavrukhina E.A., Chubanov A.A., Njiya N.
|
| Vol 51, No 4 (2017) |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
|
|
Khabibullin R.A., Shchavruk N.V., Klochkov A.N., Glinskiy I.A., Zenchenko N.V., Ponomarev D.S., Maltsev P.P., Zaycev A.A., Zubov F.I., Zhukov A.E., Cirlin G.E., Alferov Z.I.
|
| Vol 50, No 10 (2016) |
Energy spectrum of charge carriers in TlIn1–xYbxTe2 solid solutions |
|
|
Aliev F.F., Agaeva U.M., Zarbaliev M.M.
|
| Vol 51, No 5 (2017) |
Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals |
|
|
Kurochkin N.S., Katsaba A.V., Ambrozevich S.A., Vitukhnovsky A.G., Vashchenko A.A., Tananaev P.N.
|
| Vol 53, No 16 (2019) |
Enhanced Photocatalytic Activity of ZnS:Mn2+ Quantum Dots |
|
|
Sergeeva K.A., Sergeev A.A., Postnova I.V., Shchipunov Y.A., Voznesenskiy S.S.
|
| Vol 53, No 9 (2019) |
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers |
|
|
Prokhorov D.S., Shengurov V.G., Denisov S.A., Filatov D.O., Zdoroveishev A.V., Chalkov V.Y., Zaitsev A.V., Ved’ M.V., Dorokhin M.V., Baidakova N.A.
|
| Vol 52, No 4 (2018) |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
|
|
Danilov L.V., Mikhailova M.P., Levin R.V., Konovalov G.G., Ivanov E.V., Andreev I.A., Pushnyi B.V., Zegrya G.G.
|
| Vol 50, No 10 (2016) |
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range |
|
|
Kunitsyna E.V., Grebenshchikova E.A., Konovalov G.G., Andreev I.A., Yakovlev Y.P.
|
| Vol 51, No 1 (2017) |
Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |
|
|
Seredin P.V., Lenshin A.S., Arsentiev I.N., Zhabotinskii A.V., Nikolaev D.N., Tarasov I.S., Shamakhov V.V., Prutskij T., Leiste H., Rinke M.
|
| Vol 53, No 7 (2019) |
Epitaxial Carbyne: Analytical Results |
|
|
Davydov S.Y.
|
| Vol 50, No 11 (2016) |
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method |
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Lobanov D.N., Novikov A.V., Yunin P.A., Skorohodov E.V., Shaleev M.V., Drozdov M.N., Khrykin O.I., Buzanov O.A., Alenkov V.V., Folomin P.I., Gritsenko A.B.
|
| Vol 50, No 9 (2016) |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
|
|
Tsatsulnikov A.F., Lundin W.V., Sakharov A.V., Zavarin E.E., Usov S.O., Nikolaev A.E., Yagovkina M.A., Ustinov V.M., Cherkashin N.A.
|
| Vol 50, No 3 (2016) |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
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Detochenko A.P., Denisov S.A., Drozdov M.N., Mashin A.I., Gavva V.A., Bulanov A.D., Nezhdanov A.V., Ezhevskii A.A., Stepikhova M.V., Chalkov V.Y., Trushin V.N., Shengurov D.V., Shengurov V.G., Abrosimov N.V., Riemann H.
|
| Vol 51, No 8 (2017) |
Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” |
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Surovegina E.A., Demidov E.V., Drozdov M.N., Murel A.V., Khrykin O.I., Shashkin V.I., Lobaev M.A., Gorbachev A.M., Viharev A.L., Bogdanov S.A., Isaev V.A., Muchnikov A.B., Chernov V.V., Radishchev D.B., Batler J.E.
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