| Issue |
Title |
File |
| Vol 52, No 4 (2018) |
Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics |
|
|
Mironova M.S., Zubkov V.I., Dudin A.L., Glinskii G.F.
|
| Vol 50, No 10 (2016) |
Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission |
|
|
Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N.
|
| Vol 53, No 9 (2019) |
Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators |
|
|
Baryshev V.R., Ginzburg N.S., Zaslavsky V.Y., Malkin A.M.
|
| Vol 53, No 10 (2019) |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
|
|
Gordeev N.Y., Payusov A.S., Maximov M.V.
|
| Vol 51, No 11 (2017) |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
|
|
Borisov V.I., Kuvshinova N.A., Kurochka S.P., Sizov V.E., Stepushkin M.V., Temiryazev A.G.
|
| Vol 50, No 7 (2016) |
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films |
|
|
Ivanov P.A., Kudoyarov M.F., Kozlovski M.A., Potapov A.S., Samsonova T.P.
|
| Vol 53, No 8 (2019) |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
|
|
Abolmasov S.N., Abramov A.S., Semenov A.V., Shakhray I.S., Terukov E.I., Malchukova E.V., Trapeznikova I.N.
|
| Vol 51, No 4 (2017) |
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments |
|
|
Zegrya G.G., Savenkov G.G., Morozov V.A., Zegrya A.G., Ulin N.V., Ulin V.P., Lukin A.A., Bragin V.A., Oskin I.A., Mikhailov Y.M.
|
| Vol 51, No 3 (2017) |
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types |
|
|
Kukushkin S.A., Osipov A.V., Red’kov A.V.
|
| Vol 53, No 5 (2019) |
Setup for Measuring the Thermoelectric Properties of Ultrathin Wires |
|
|
Uryupin O.N., Shabaldin A.A.
|
| Vol 53, No 10 (2019) |
Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers |
|
|
Kukushkin V.A.
|
| Vol 53, No 1 (2019) |
Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures |
|
|
Torkhov N.A.
|
| Vol 50, No 2 (2016) |
Si:Si LEDs with room-temperature dislocation-related luminescence |
|
|
Sobolev N.A., Kalyadin A.E., Konovalov M.V., Aruev P.N., Zabrodskiy V.V., Shek E.I., Shtel’makh K.F., Mikhaylov A.N., Tetel’baum D.I.
|
| Vol 53, No 2 (2019) |
Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light |
|
|
Basalaeva L.S., Nastaushev Y.V., Dultsev F.N., Kryzhanovskaya N.V., Moiseev E.I.
|
| Vol 51, No 4 (2017) |
Silicon nanowire array architecture for heterojunction electronics |
|
|
Solovan M.M., Brus V.V., Mostovyi A.I., Maryanchuk P.D., Orletskyi I.G., Kovaliuk T.T., Abashin S.L.
|
| Vol 53, No 4 (2019) |
Simulated Contrast of Two Dislocations |
|
|
Ledra M., El Hdiy A.
|
| Vol 51, No 13 (2017) |
Simulating a Cell Based on a Three-Dimensional Heterojunction with Distributed Charge-Carrier Generation |
|
|
Shulezhko V.V., Morozova E.V.
|
| Vol 52, No 8 (2018) |
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System |
|
|
Vexler M.I.
|
| Vol 52, No 16 (2018) |
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode |
|
|
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
|
| Vol 53, No 6 (2019) |
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction |
|
|
Shashkina A.S., Hanin S.D.
|
| Vol 51, No 6 (2017) |
Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field |
|
|
Rekhviashvili S.S., Alikhanov A.A.
|
| Vol 52, No 10 (2018) |
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method |
|
|
Belolipetskiy A.V., Nestoklon M.O., Yassievich I.N.
|
| Vol 50, No 11 (2016) |
Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range |
|
|
Pavelyev D.G., Vasilev A.P., Kozlov V.A., Koschurinov Y.I., Obolenskaya E.S., Obolensky S.V., Ustinov V.M.
|
| Vol 51, No 6 (2017) |
Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold |
|
|
Gorbatyuk A.V., Ivanov B.V.
|
| Vol 51, No 7 (2017) |
Simulation of the Qmax mode of a thermoelectric cooler taking into account thermal resistances at the cool and hot sides |
|
|
Melnikov A.A., Phiri A.M., Tarasova I.V., Batrameev N.V.
|
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