Issue |
Title |
File |
Vol 50, No 1 (2016) |
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters |
|
Emelyanov V.M., Sorokina S.V., Khvostikov V.P., Shvarts M.Z.
|
Vol 51, No 6 (2017) |
Simulation of the field-activated sintering of thermoelectric materials |
|
Bulat L.P., Novotelnova A.V., Osvenskii V.B., Tukmakova A.S., Yerezhep D.
|
Vol 53, No 9 (2019) |
Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure |
|
Zabavichev I.Y., Potehin A.A., Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
Vol 50, No 1 (2016) |
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm |
|
Emelyanov V.M., Mintairov S.A., Sorokina S.V., Khvostikov V.P., Shvarts M.Z.
|
Vol 53, No 1 (2019) |
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell |
|
Svintsov A.A., Yakimov E.B., Dorokhin M.V., Demina P.B., Kuznetsov Y.M.
|
Vol 50, No 4 (2016) |
Simulation of the real efficiencies of high-efficiency silicon solar cells |
|
Sachenko A.V., Skrebtii A.I., Korkishko R.M., Kostylyov V.P., Kulish N.R., Sokolovskyi I.O.
|
Vol 50, No 1 (2016) |
Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source |
|
Nagornov Y.S., Murashev V.N.
|
Vol 53, No 6 (2019) |
Simulation of Thermoelectric Materials Densification during Spark Plasma Sintering with the Example of Ge–Si |
|
Tukmakova A.S., Samusevich K.L., Novotelnova A.V., Tkhorzhevskiy I.L., Makarova E.S.
|
Vol 53, No 3 (2019) |
Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package) |
|
Ivanov P.A., Potapov A.S., Samsonova T.P.
|
Vol 51, No 3 (2017) |
Single crystals of (FeIn2S4)x · (CuIn5S8)1–x alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion |
|
Bodnar I.V., Zhafar M.A., Kasyuk Y.V., Fedotova Y.A.
|
Vol 51, No 12 (2017) |
Single electron transistor: Energy-level broadening effect and thermionic contribution |
|
Nasri A., Boubaker A., Khaldi W., Hafsi B., Kalboussi A.
|
Vol 52, No 12 (2018) |
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field |
|
Sablikov V.A., Tkach Y.Y.
|
Vol 52, No 5 (2018) |
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE |
|
Jmerik V.N., Shubina T.V., Nechaev D.V., Semenov A.N., Kirilenko D.A., Davydov V.Y., Smirnov A.N., Eliseev I.A., Posina G., Ivanov S.V.
|
Vol 53, No 7 (2019) |
Size Dependence of the Melting Point of Silicon Nanoparticles: Molecular Dynamics and Thermodynamic Simulation |
|
Dronnikov V.V., Talyzin I.V., Samsonov M.V., Samsonov V.M., Pushkar M.Y.
|
Vol 52, No 9 (2018) |
Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid |
|
Kondratenko T.S., Smirnov M.S., Ovchinnikov O.V., Shabunya-Klyachkovskaya E.V., Matsukovich A.S., Zvyagin A.I., Vinokur Y.A.
|
Vol 52, No 12 (2018) |
Solar Cell Based on Core/Shell Nanowires |
|
Sibirev N.V., Kotlyar K.P., Koryakin A.A., Shtrom I.V., Ubiivovk E.V., Soshnikov I.P., Reznik R.R., Bouravleuv A.D., Cirlin G.E.
|
Vol 52, No 8 (2018) |
Solid-Phase Reactions and Phase Transformations in a Nanoscale Bismuth/Selenium Film Structure |
|
Kogai V.Y., Mikheev G.M.
|
Vol 50, No 7 (2016) |
Solubility of oxygen in CdS single crystals and their physicochemical properties |
|
Morozova N.K., Kanakhin A.A., Shnitnikov A.S.
|
Vol 50, No 10 (2016) |
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons |
|
Emtsev V.V., Abrosimov N.V., Kozlovskii V.V., Oganesyan G.A., Poloskin D.S.
|
Vol 53, No 8 (2019) |
Some Physical Properties of the New Intermetallic Compound NbCd2 |
|
Tuleushev Y.Z., Zhakanbaev E.A., Migunova A.A., Nicenko A.B., Volodin V.N.
|
Vol 51, No 2 (2017) |
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures |
|
Zakgeim A.L., Il’inskaya N.D., Karandashev S.A., Lavrov A.A., Matveev B.A., Remennyy M.A., Stus’ N.M., Usikova A.A., Cherniakov A.E.
|
Vol 51, No 5 (2017) |
Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field |
|
Pashkovskii A.B.
|
Vol 53, No 6 (2019) |
Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities |
|
Slipchenko S.O., Podoskin A.A., Soboleva O.S., Yuferev V.S., Golovin V.S., Gavrina P.S., Romanovich D.N., Miroshnikov I.V., Pikhtin N.A.
|
Vol 53, No 6 (2019) |
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers |
|
Podoskin A.A., Romanovich D.N., Shashkin I.S., Gavrina P.S., Sokolova Z.N., Slipchenko S.O., Pikhtin N.A.
|
Vol 50, No 4 (2016) |
Specific features of doping with antimony during the ion-beam crystallization of silicon |
|
Pashchenko A.S., Chebotarev S.N., Lunin L.S., Irkha V.A.
|
1151 - 1175 of 1443 Items |
<< < 42 43 44 45 46 47 48 49 50 51 > >> |