| Выпуск |
Название |
Файл |
| Том 52, № 4 (2018) |
Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics |
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Mironova M., Zubkov V., Dudin A., Glinskii G.
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| Том 50, № 10 (2016) |
Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission |
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Ageeva N., Bronevoi I., Zabegaev D., Krivonosov A.
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| Том 53, № 9 (2019) |
Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators |
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Baryshev V., Ginzburg N., Zaslavsky V., Malkin A.
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| Том 53, № 10 (2019) |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
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Gordeev N., Payusov A., Maximov M.
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| Том 51, № 11 (2017) |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
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Borisov V., Kuvshinova N., Kurochka S., Sizov V., Stepushkin M., Temiryazev A.
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| Том 50, № 7 (2016) |
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films |
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Ivanov P., Kudoyarov M., Kozlovski M., Potapov A., Samsonova T.
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| Том 53, № 8 (2019) |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
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Abolmasov S., Abramov A., Semenov A., Shakhray I., Terukov E., Malchukova E., Trapeznikova I.
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| Том 51, № 4 (2017) |
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments |
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Zegrya G., Savenkov G., Morozov V., Zegrya A., Ulin N., Ulin V., Lukin A., Bragin V., Oskin I., Mikhailov Y.
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| Том 51, № 3 (2017) |
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types |
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Kukushkin S., Osipov A., Red’kov A.
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| Том 53, № 5 (2019) |
Setup for Measuring the Thermoelectric Properties of Ultrathin Wires |
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Uryupin O., Shabaldin A.
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| Том 53, № 10 (2019) |
Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers |
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Kukushkin V.
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| Том 53, № 1 (2019) |
Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures |
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Torkhov N.
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| Том 50, № 2 (2016) |
Si:Si LEDs with room-temperature dislocation-related luminescence |
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Sobolev N., Kalyadin A., Konovalov M., Aruev P., Zabrodskiy V., Shek E., Shtel’makh K., Mikhaylov A., Tetel’baum D.
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| Том 53, № 2 (2019) |
Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light |
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Basalaeva L., Nastaushev Y., Dultsev F., Kryzhanovskaya N., Moiseev E.
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| Том 51, № 4 (2017) |
Silicon nanowire array architecture for heterojunction electronics |
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Solovan M., Brus V., Mostovyi A., Maryanchuk P., Orletskyi I., Kovaliuk T., Abashin S.
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| Том 53, № 4 (2019) |
Simulated Contrast of Two Dislocations |
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Ledra M., El Hdiy A.
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| Том 51, № 13 (2017) |
Simulating a Cell Based on a Three-Dimensional Heterojunction with Distributed Charge-Carrier Generation |
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Shulezhko V., Morozova E.
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| Том 52, № 8 (2018) |
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System |
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Vexler M.
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| Том 52, № 16 (2018) |
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode |
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Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
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| Том 53, № 6 (2019) |
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction |
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Shashkina A., Hanin S.
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| Том 51, № 6 (2017) |
Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field |
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Rekhviashvili S., Alikhanov A.
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| Том 52, № 10 (2018) |
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method |
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Belolipetskiy A., Nestoklon M., Yassievich I.
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| Том 50, № 11 (2016) |
Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range |
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Pavelyev D., Vasilev A., Kozlov V., Koschurinov Y., Obolenskaya E., Obolensky S., Ustinov V.
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| Том 51, № 6 (2017) |
Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold |
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Gorbatyuk A., Ivanov B.
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| Том 51, № 7 (2017) |
Simulation of the Qmax mode of a thermoelectric cooler taking into account thermal resistances at the cool and hot sides |
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Melnikov A., Phiri A., Tarasova I., Batrameev N.
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