| Issue |
Title |
File |
| Vol 53, No 11 (2019) |
Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films |
|
|
Volochaev M.N., Kalinin Y.E., Kashirin M.A., Makagonov V.A., Pankov S.Y., Bassarab V.V.
|
| Vol 53, No 11 (2019) |
Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System |
|
|
Isayev A.I., Mekhtiyeva S.I., Mammadova H.I., Alekberov R.I.
|
| Vol 50, No 1 (2016) |
Structure and optical properties of ZnO with silver nanoparticles |
|
|
Lyadov N.M., Gumarov A.I., Kashapov R.N., Noskov A.I., Valeev V.F., Nuzhdin V.I., Bazarov V.V., Khaibullin R.I., Faizrakhmanov I.A.
|
| Vol 53, No 3 (2019) |
Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition |
|
|
Kalygina V.M., Lygdenova T.Z., Novikov V.A., Petrova Y.S., Tsymbalov A.V., Yaskevich T.M.
|
| Vol 51, No 13 (2017) |
Structure and Properties of Nanostructured YBa2Cu3O7–δ, BiFeO3, and Fe3O4 |
|
|
Gadzhimagomedov S.H., Alikhanov N.M., Emirov R.M., Palchaev D.K., Murlieva Z.K., Rabadanov M.K., Sadykov S.A., Khamidov M.M., Hashafa A.D.
|
| Vol 51, No 3 (2017) |
Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition |
|
|
Kopach V.R., Klepikova K.S., Klochko N.P., Khrypunov G.S., Korsun V.E., Lyubov V.M., Kirichenko M.V., Kopach A.V.
|
| Vol 52, No 7 (2018) |
Structure and Properties of Thin Graphite-Like Films Produced by Magnetron-Assisted Sputtering |
|
|
Vinogradov A.Y., Grudinkin S.A., Besedina N.A., Koniakhin S.V., Rabchinskii M.K., Eidelman E.D., Golubev V.G.
|
| Vol 53, No 3 (2019) |
Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV |
|
|
Privezentsev V.V., Kulikauskas V.S., Skuratov V.A., Zilova O.S., Burmistrov A.A., Presnyakov M.Y., Goryachev A.V.
|
| Vol 53, No 6 (2019) |
Structure and Thermoelectric Properties of CoSi-Based Film Composites |
|
|
Kuznetsova V.S., Novikov S.V., Nichenametla C.K., Calvo J., Wagner-Reetz M.
|
| Vol 51, No 8 (2017) |
Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method |
|
|
Demcheglo V.D., Voronin A.I., Tabachkova N.Y., Bublik V.T., Ponomaryov V.F.
|
| Vol 51, No 7 (2017) |
Structure of bismuth films obtained using an array of identically oriented single-crystal bismuth islands preliminarily grown on a substrate |
|
|
Grabov V.M., Demidov E.V., Ivanova E.K., Kablukova N.S., Krushelnitckii A.N., Senkevich S.V.
|
| Vol 53, No 11 (2019) |
Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity |
|
|
Garibova S.N., Isayev A.I., Mekhtiyeva S.I., Atayeva S.U.
|
| Vol 51, No 7 (2017) |
Structure of the Cu2Se compound produced by different methods |
|
|
Ivanov A.A., Sorokin A.I., Panchenko V.P., Tarasova I.V., Tabachkova N.Y., Bublik V.T., Akchurin R.H.
|
| Vol 53, No 7 (2019) |
Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint |
|
|
Prokofieva L.V., Konstantinov P.P.
|
| Vol 51, No 6 (2017) |
Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data |
|
|
Orekhov A.S., Kamilov T.S., Ibragimova B.V., Ivakin G.I., Klechkovskaya V.V.
|
| Vol 53, No 9 (2019) |
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate |
|
|
Sushkov A.A., Pavlov D.A., Shengurov V.G., Denisov S.A., Chalkov V.Y., Baidus N.V., Rykov A.V., Kryukov R.N.
|
| Vol 51, No 12 (2017) |
Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method |
|
|
El Ouchdi A.A., Bouazza B., Belhadji Y., Massoum N.
|
| Vol 52, No 7 (2018) |
Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure |
|
|
Tregulov V.V., Litvinov V.G., Ermachikhin A.V.
|
| Vol 52, No 7 (2018) |
Study of Deep Levels in a HIT Solar Cell |
|
|
Shilina D.V., Litvinov V.G., Maslov A.D., Mishustin V.G., Terukov E.I., Titov A.S., Vikhrov S.P., Vishnyakov N.V., Gudzev V.V., Ermachikhin A.V.
|
| Vol 50, No 7 (2016) |
Study of deep levels in GaAs p–i–n structures |
|
|
Sobolev M.M., Soldatenkov F.Y., Kozlov V.A.
|
| Vol 51, No 2 (2017) |
Study of silicon doped with zinc ions and annealed in oxygen |
|
|
Privezentsev V.V., Kirilenko E.P., Goryachev A.N., Batrakov A.A.
|
| Vol 53, No 16 (2019) |
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods |
|
|
Astankova K.N., Gorokhov E.B., Azarov I.A., Volodin V.A., Latyshev A.V.
|
| Vol 53, No 9 (2019) |
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm |
|
|
Utochkin V.V., Aleshkin V.Y., Dubinov A.A., Gavrilenko V.I., Kulikov N.S., Fadeev M.A., Rumyantsev V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V.
|
| Vol 50, No 5 (2016) |
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase |
|
|
Alpatov A.V., Vikhrov S.P., Kazanskii A.G., Lyaskovskii V.L., Rybin N.B., Rybina N.V., Forsh P.A.
|
| Vol 51, No 8 (2017) |
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) |
|
|
Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Vilkov O.Y., Rybkin A.G., Lebedev A.A.
|
| 1226 - 1250 of 1443 Items |
<< < 45 46 47 48 49 50 51 52 53 54 > >> |
