| Issue |
Title |
File |
| Vol 52, No 11 (2018) |
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices |
|
|
Pavelyev D.G., Vasilev A.P., Kozlov V.A., Obolenskaya E.S.
|
| Vol 50, No 6 (2016) |
Radiation-induced bistable centers with deep levels in silicon n+–p structures |
|
|
Lastovskii S.B., Markevich V.P., Yakushevich H.S., Murin L.I., Krylov V.P.
|
| Vol 52, No 13 (2018) |
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles |
|
|
Strel’chuk A.M., Kozlovski V.V., Lebedev A.A.
|
| Vol 51, No 12 (2017) |
Radiation-produced defects in germanium: Experimental data and models of defects |
|
|
Emtsev V.V., Kozlovski V.V., Poloskin D.S., Oganesyan G.A.
|
| Vol 50, No 5 (2016) |
Radiation-stimulated processes in transistor temperature sensors |
|
|
Pavlyk B.V., Grypa A.S.
|
| Vol 51, No 3 (2017) |
Radiative d–d transitions at tungsten centers in II–VI semiconductors |
|
|
Ushakov V.V., Krivobok V.S., Pruchkina A.A.
|
| Vol 52, No 7 (2018) |
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion |
|
|
Ishchenko D.V., Neizvestny I.G.
|
| Vol 53, No 11 (2019) |
Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds |
|
|
Breev I.D., Anisimov A.N., Wolfson A.A., Kazarova O.P., Mokhov E.N.
|
| Vol 51, No 2 (2017) |
Raman scattering in InP doped by Be+-ion implantation |
|
|
Avakyants L.P., Bokov P.Y., Chervyakov A.V.
|
| Vol 53, No 4 (2019) |
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films |
|
|
Tyschenko I.E., Volodin V.A., Popov V.P.
|
| Vol 52, No 9 (2018) |
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method |
|
|
Anisimov A.N., Wolfson A.A., Mokhov E.N.
|
| Vol 52, No 6 (2018) |
Rb1 – xCsxNO3 (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study |
|
|
Haziyeva A.F., Nasirov V.I., Asadov Y.G., Aliyev Y.I., Jabarov S.H.
|
| Vol 52, No 10 (2018) |
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities |
|
|
Mintairov M.A., Evstropov V.V., Mintairov S.A., Salii R.A., Shvarts M.Z., Kalyuzhnyy N.A.
|
| Vol 53, No 12 (2019) |
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures |
|
|
Muratov T.T.
|
| Vol 53, No 14 (2019) |
Record Low Threshold Current Density in Quantum Dot Microdisk Laser |
|
|
Moiseev E.I., Kryzhanovskaya N.V., Zubov F.I., Mikhailovskii M.S., Abramov A.N., Maximov M.V., Kulagina M.M., Guseva Y.A., Livshits D.A., Zhukov A.E.
|
| Vol 52, No 4 (2018) |
Red Single-Photon Emission from InAs/AlGaAs Quantum Dots |
|
|
Rakhlin M.V., Belyaev K.G., Klimko G.V., Mukhin I.S., Ivanov S.V., Toropov A.A.
|
| Vol 52, No 13 (2018) |
Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films |
|
|
Feklistov K.V., Cherkov A.G., Popov V.P., Fedina L.I.
|
| Vol 52, No 11 (2018) |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
|
|
Zhukov A.E., Gordeev N.Y., Shernyakov Y.M., Payusov A.S., Serin A.A., Kulagina M.M., Mintairov S.A., Kalyuzhnyy N.A., Maximov M.V.
|
| Vol 50, No 10 (2016) |
Reflectance of a PbSb2Te4 crystal in a wide spectral range |
|
|
Nemov S.A., Ulashkevich Y.V., Povolotskii A.V., Khlamov I.I.
|
| Vol 51, No 10 (2017) |
Reflectance spectra of p-Bi2Te3:Sn crystals in a wide IR region |
|
|
Nemov S.A., Ulashkevich Y.V., Allahkhah A.A.
|
| Vol 52, No 16 (2018) |
Reflectometry of X-ray Whispering Gallery Waves Propagating along Liquid Meniscuses |
|
|
Goray L.I., Asadchikov V.E., Roshchin B.S., Volkov Y.O., Tikhonov A.M.
|
| Vol 52, No 12 (2018) |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
|
|
Gorshkov A.P., Volkova N.S., Pavlov D.A., Usov Y.V., Istomin L.A., Levichev S.B.
|
| Vol 53, No 11 (2019) |
Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time |
|
|
Ageeva N.N., Bronevoi I.L., Zabegaev D.N., Krivonosov A.N.
|
| Vol 50, No 9 (2016) |
Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures |
|
|
Kalygina V.M., Egorova I.M., Novikov V.A., Prudaev I.A., Tolbanov O.P.
|
| Vol 50, No 4 (2016) |
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons |
|
|
Kumekov S.E., Mustafin A.T., Mussatay S.S.
|
| 1076 - 1100 of 1443 Items |
<< < 39 40 41 42 43 44 45 46 47 48 > >> |
