| Выпуск |
Название |
Файл |
| Том 51, № 3 (2017) |
Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator |
|
|
Parshina L., Khramova O., Novodvorsky O., Lotin A., Petukhov I., Putilin F., Shcherbachev K.
|
| Том 52, № 5 (2018) |
Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001) |
|
|
Tarasov I., Rautskii M., Yakovlev I., Volochaev M.
|
| Том 52, № 10 (2018) |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
|
|
Maximov M., Nadtochiy A., Shernyakov Y., Payusov A., Vasil’ev A., Ustinov V., Serin A., Gordeev N., Zhukov A.
|
| Том 52, № 11 (2018) |
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells |
|
|
Rumyantsev V., Kulikov N., Kadykov A., Fadeev M., Ikonnikov A., Kazakov A., Zholudev M., Aleshkin V., Utochkin V., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
|
| Том 51, № 8 (2017) |
Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers |
|
|
Sekerbayev K., Taurbayev Y., Efimova A., Timoshenko V., Taurbayev T.
|
| Том 51, № 4 (2017) |
Effect of gamma irradiation on the photoluminescence of porous silicon |
|
|
Elistratova M., Romanov N., Goryachev D., Zakharova I., Sreseli O.
|
| Том 51, № 3 (2017) |
Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region |
|
|
Klyui N., Lozinskii V., Liptuga A., Dikusha V., Oksanych A., Kogdas’ M., Perekhrest A., Pritchin S.
|
| Том 52, № 2 (2018) |
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films |
|
|
Abdullin K., Gritsenko L., Kumekov S., Markhabaeva A., Terukov E.
|
| Том 51, № 12 (2017) |
Effect of high voltage electric field on structure and property of PEDOT:PSS film |
|
|
Zhang J., Liu J.
|
| Том 52, № 9 (2018) |
Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals |
|
|
Yafarov R.
|
| Том 51, № 5 (2017) |
Effect of hydrogen desorption on the mechanical properties and electron structure of diamond-like carbon nanothreads |
|
|
Podlivaev A., Openov L.
|
| Том 52, № 1 (2018) |
Effect of Hydrostatic Pressure on the Static Permittivity of Germanium |
|
|
Musaev A.
|
| Том 52, № 9 (2018) |
Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure |
|
|
Saidov A., Leyderman A., Usmonov S., Amonov K.
|
| Том 51, № 5 (2017) |
Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate |
|
|
Davydov S.
|
| Том 53, № 11 (2019) |
Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films |
|
|
Krylov P., Alalykin A., Durman E., Zakirova R., Fedotova I.
|
| Том 50, № 13 (2016) |
Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface |
|
|
Pyatilova O., Sysa A., Gavrilov S., Yakimova L., Pavlov A., Belov A., Raskin A.
|
| Том 53, № 12 (2019) |
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |
|
|
Lebedev A., Levinshtein M., Ivanov P., Kozlovski V., Strel’chuk A., Shabunina E., Fursin L.
|
| Том 52, № 3 (2018) |
Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon |
|
|
Bilenko D., Belobrovaya O., Terin D., Galushka V., Galushka I., Zharkova E., Polyanskaya V., Sidorov V., Yagudin I.
|
| Том 52, № 10 (2018) |
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes |
|
|
Ivanov P., Potapov A., Kudoyarov M., Samsonova T.
|
| Том 52, № 8 (2018) |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
|
|
Seredin P., Goloshchapov D., Zolotukhin D., Lenshin A., Lukin A., Khudyakov Y., Arsentyev I., Zhabotinsky A., Nikolaev D., Pikhtin N.
|
| Том 50, № 7 (2016) |
Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth |
|
|
Romanov V., Dement’ev P., Moiseev K.
|
| Том 53, № 4 (2019) |
Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon |
|
|
Orlov V., Yarykin N., Yakimov E.
|
| Том 53, № 4 (2019) |
Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering |
|
|
Kumar B., Hymavathi B.
|
| Том 50, № 3 (2016) |
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well |
|
|
Hasanov K., Huseynov J., Dadashova V., Aliyev F.
|
| Том 53, № 1 (2019) |
Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals |
|
|
Yafarov R.
|
| 251 - 275 из 1443 результатов |
<< < 6 7 8 9 10 11 12 13 14 15 > >> |
