| Edição |
Título |
Arquivo |
| Volume 51, Nº 3 (2017) |
Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode |
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Ivanov P., Potapov A., Samsonova T., Grekhov I.
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| Volume 51, Nº 8 (2017) |
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |
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Mnatsakanov T., Tandoev A., Levinshtein M., Yurkov S., Palmour J.
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| Volume 51, Nº 11 (2017) |
Cyclotron resonance features in a three-dimensional topological insulators |
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Turkevich R., Demikhovskii V., Protogenov A.
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| Volume 51, Nº 1 (2017) |
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells |
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Krishtopenko S., Ikonnikov A., Maremyanin K., Bovkun L., Spirin K., Kadykov A., Marcinkiewicz M., Ruffenach S., Consejo C., Teppe F., Knap W., Semyagin B., Putyato M., Emelyanov E., Preobrazhenskii V., Gavrilenko V.
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| Volume 52, Nº 5 (2018) |
Dangling Bond Spins Controlling Recombination Dynamics of Excitons in Colloidal Nanocrystals and Nanoplatelets |
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Rodina A., Golovatenko A., Shornikova E., Yakovlev D., Efros A.
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| Volume 53, Nº 12 (2019) |
De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States |
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Romanov V., Kozhevnikov V., Tracey C., Bagraev N.
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| Volume 53, Nº 3 (2019) |
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon |
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Shuman V., Lodygin A., Portsel L., Yakovleva A., Abrosimov N., Astrov Y.
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| Volume 50, Nº 3 (2016) |
Deep Centers at the Interface in In2xGa2(1–x)Te3/InAs and In2Te3/InAs Heterostructures |
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Domashevskaya E., Mikhailyuk E., Prokopova T., Bezryadin N.
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| Volume 52, Nº 3 (2018) |
Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals |
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Plyatsko S., Rashkovetskyi L.
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| Volume 53, Nº 4 (2019) |
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |
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Sobolev N., Sakharov V., Serenkov I., Bondarev A., Karabeshkin K., Fomin E., Kalyadin A., Mikoushkin V., Shek E., Sherstnev E.
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| Volume 50, Nº 2 (2016) |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
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Mynbaev K., Zablotsky S., Shilyaev A., Bazhenov N., Yakushev M., Marin D., Varavin V., Dvoretsky S.
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| Volume 51, Nº 9 (2017) |
Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring |
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Bogdanov D., Gorbatovskii G., Verbitskii V., Bobyl A., Terukov E.
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| Volume 51, Nº 11 (2017) |
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons |
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Zabavichev I., Potekhin A., Puzanov A., Obolenskiy S., Kozlov V.
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| Volume 51, Nº 10 (2017) |
Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation |
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Vikulin I., Gorbachev V., Kurmashev S.
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| Volume 52, Nº 8 (2018) |
Degradation of the Photoluminescence of ZnTPP and ZnTPP–C60 Thin Films under Gamma Irradiation |
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Romanov N., Elistratova M., Lahderanta E., Zakharova I.
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| Volume 52, Nº 4 (2018) |
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy |
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Lebedev D., Kalyuzhnyy N., Mintairov S., Belyaev K., Rakhlin M., Toropov A., Brunkov P., Vlasov A., Merz J., Rouvimov S., Oktyabrsky S., Yakimov M., Mukhin I., Shelaev A., Bykov V., Romanova A., Buryak P., Mintairov A.
|
| Volume 52, Nº 15 (2018) |
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition |
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Novak A., Novak V., Dedkova A., Gusev E.
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| Volume 50, Nº 4 (2016) |
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides |
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Borisenko S.
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| Volume 53, Nº 1 (2019) |
Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters |
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Peshcherova S., Yakimov E., Nepomnyashchikh A., Orlov V., Feklisova O., Pavlova L., Presnyakov R.
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| Volume 53, Nº 7 (2019) |
Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction |
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Guseva E., Forsh E.
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| Volume 50, Nº 6 (2016) |
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes |
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Zuev S., Kilessa G., Asanov E., Starostenko V., Pokrova S.
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| Volume 50, Nº 5 (2016) |
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers |
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Sokolova Z., Bakhvalov K., Lyutetskiy A., Pikhtin N., Tarasov I., Asryan L.
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| Volume 53, Nº 8 (2019) |
Dependence of the Spontaneous Luminescence Intensity in ZnO Nanorods on their Length |
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Gruzintsev A., Redkin A., Yakimov E.
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| Volume 53, Nº 15 (2019) |
Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature |
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Gadzhiev T., Aliev M., Asvarov A., Gadzhieva R., Bilalov B., Ismailov A., Shomakhov Z.
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| Volume 51, Nº 7 (2017) |
Dependence of the surface morphology of ultrathin bismuth films on mica substrates on the film thickness |
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Krushelnitckii A., Demidov E., Ivanova E., Kablukova N., Komarov V.
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