| Шығарылым |
Атауы |
Файл |
| Том 51, № 3 (2017) |
Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode |
|
|
Ivanov P., Potapov A., Samsonova T., Grekhov I.
|
| Том 51, № 8 (2017) |
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |
|
|
Mnatsakanov T., Tandoev A., Levinshtein M., Yurkov S., Palmour J.
|
| Том 51, № 11 (2017) |
Cyclotron resonance features in a three-dimensional topological insulators |
|
|
Turkevich R., Demikhovskii V., Protogenov A.
|
| Том 51, № 1 (2017) |
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells |
|
|
Krishtopenko S., Ikonnikov A., Maremyanin K., Bovkun L., Spirin K., Kadykov A., Marcinkiewicz M., Ruffenach S., Consejo C., Teppe F., Knap W., Semyagin B., Putyato M., Emelyanov E., Preobrazhenskii V., Gavrilenko V.
|
| Том 52, № 5 (2018) |
Dangling Bond Spins Controlling Recombination Dynamics of Excitons in Colloidal Nanocrystals and Nanoplatelets |
|
|
Rodina A., Golovatenko A., Shornikova E., Yakovlev D., Efros A.
|
| Том 53, № 12 (2019) |
De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States |
|
|
Romanov V., Kozhevnikov V., Tracey C., Bagraev N.
|
| Том 53, № 3 (2019) |
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon |
|
|
Shuman V., Lodygin A., Portsel L., Yakovleva A., Abrosimov N., Astrov Y.
|
| Том 50, № 3 (2016) |
Deep Centers at the Interface in In2xGa2(1–x)Te3/InAs and In2Te3/InAs Heterostructures |
|
|
Domashevskaya E., Mikhailyuk E., Prokopova T., Bezryadin N.
|
| Том 52, № 3 (2018) |
Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals |
|
|
Plyatsko S., Rashkovetskyi L.
|
| Том 53, № 4 (2019) |
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |
|
|
Sobolev N., Sakharov V., Serenkov I., Bondarev A., Karabeshkin K., Fomin E., Kalyadin A., Mikoushkin V., Shek E., Sherstnev E.
|
| Том 50, № 2 (2016) |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
|
|
Mynbaev K., Zablotsky S., Shilyaev A., Bazhenov N., Yakushev M., Marin D., Varavin V., Dvoretsky S.
|
| Том 51, № 9 (2017) |
Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring |
|
|
Bogdanov D., Gorbatovskii G., Verbitskii V., Bobyl A., Terukov E.
|
| Том 51, № 11 (2017) |
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons |
|
|
Zabavichev I., Potekhin A., Puzanov A., Obolenskiy S., Kozlov V.
|
| Том 51, № 10 (2017) |
Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation |
|
|
Vikulin I., Gorbachev V., Kurmashev S.
|
| Том 52, № 8 (2018) |
Degradation of the Photoluminescence of ZnTPP and ZnTPP–C60 Thin Films under Gamma Irradiation |
|
|
Romanov N., Elistratova M., Lahderanta E., Zakharova I.
|
| Том 52, № 4 (2018) |
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy |
|
|
Lebedev D., Kalyuzhnyy N., Mintairov S., Belyaev K., Rakhlin M., Toropov A., Brunkov P., Vlasov A., Merz J., Rouvimov S., Oktyabrsky S., Yakimov M., Mukhin I., Shelaev A., Bykov V., Romanova A., Buryak P., Mintairov A.
|
| Том 52, № 15 (2018) |
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition |
|
|
Novak A., Novak V., Dedkova A., Gusev E.
|
| Том 50, № 4 (2016) |
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides |
|
|
Borisenko S.
|
| Том 53, № 1 (2019) |
Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters |
|
|
Peshcherova S., Yakimov E., Nepomnyashchikh A., Orlov V., Feklisova O., Pavlova L., Presnyakov R.
|
| Том 53, № 7 (2019) |
Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction |
|
|
Guseva E., Forsh E.
|
| Том 50, № 6 (2016) |
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes |
|
|
Zuev S., Kilessa G., Asanov E., Starostenko V., Pokrova S.
|
| Том 50, № 5 (2016) |
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers |
|
|
Sokolova Z., Bakhvalov K., Lyutetskiy A., Pikhtin N., Tarasov I., Asryan L.
|
| Том 53, № 8 (2019) |
Dependence of the Spontaneous Luminescence Intensity in ZnO Nanorods on their Length |
|
|
Gruzintsev A., Redkin A., Yakimov E.
|
| Том 53, № 15 (2019) |
Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature |
|
|
Gadzhiev T., Aliev M., Asvarov A., Gadzhieva R., Bilalov B., Ismailov A., Shomakhov Z.
|
| Том 51, № 7 (2017) |
Dependence of the surface morphology of ultrathin bismuth films on mica substrates on the film thickness |
|
|
Krushelnitckii A., Demidov E., Ivanova E., Kablukova N., Komarov V.
|
| Нәтижелер 1443 - 151/175 |
<< < 2 3 4 5 6 7 8 9 10 11 > >> |
