Issue |
Title |
File |
Vol 51, No 5 (2017) |
Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures |
|
Kononov N.N., Dorofeev S.G.
|
Vol 52, No 13 (2018) |
Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection |
|
Aleksandrov O.V., Ageev A.N., Zolotarev S.I.
|
Vol 51, No 12 (2017) |
Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions |
|
Hlali S., Hizem N., Kalboussi A.
|
Vol 53, No 12 (2019) |
Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix |
|
Castro R.A., Khanin S.D., Smirnov A.P., Kononov A.A.
|
Vol 50, No 5 (2016) |
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM |
|
Stefanovich G.B., Pergament A.L., Boriskov P.P., Kuroptev V.A., Stefanovich T.G.
|
Vol 51, No 7 (2017) |
Charge-carrier density collapse in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
|
Korzhuev M.A.
|
Vol 53, No 9 (2019) |
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |
|
Shastin V.N., Zhukavin R.K., Kovalevsky K.A., Tsyplenkov V.V., Rumyantsev V.V., Shengurov D.V., Pavlov S.G., Shuman V.B., Portsel L.M., Lodygin A.N., Astrov Y.A., Abrosimov N.V., Klopf J.M., Hübers H.
|
Vol 50, No 7 (2016) |
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |
|
Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Sharofidinov S.S., Golovatenko A.A., Nikitina I.P., Smirnov A.N., Bugrov V.E., Romanov A.E., Brunkov P.N., Kirilenko D.A.
|
Vol 51, No 6 (2017) |
Classical magnetoresistance of a two-component system induced by thermoelectric effects |
|
Alekseev P.S., Gornyi I.V., Dmitriev A.P., Kachorovskii V.Y., Semina M.A.
|
Vol 52, No 14 (2018) |
Classification of Energy States of the Exciton in Square Quantum Well |
|
Belov P.A.
|
Vol 51, No 11 (2017) |
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures |
|
Plankina S.M., Vikhrova O.V., Zvonkov B.N., Nezhdanov A.V., Pashen’kin I.Y.
|
Vol 52, No 14 (2018) |
CNT-Based Label-Free Electrochemical Sensing of Native DNA with Allele Single Nucleotide Polymorphism |
|
Grushevskaya H.V., Krylova N.G., Lipnevich I.V., Babenka A.S., Egorova V.P., Chakukov R.F.
|
Vol 53, No 5 (2019) |
Coefficient of the Performance of a Segmented Thermoelectric Cooling Leg |
|
Drabkin I.A.
|
Vol 53, No 10 (2019) |
Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation |
|
Kulakovskii V.D., Demenev A.A.
|
Vol 51, No 9 (2017) |
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes |
|
Royz M.A., Baranov A.N., Imenkov A.N., Burenina D.S., Pivovarova A.A., Monakhov A.M., Grebenshchikova E.A., Yakovlev Y.P.
|
Vol 52, No 1 (2018) |
Combined Ultramicrotomy and Atomic Force Microscopy Study of the Structure of a Bulk Heterojunction in Polymer Solar Cells |
|
Alekseev A.M., Al-Afeef A., Hedley G.J., Kharintsev S.S., Efimov A.E., Yedrisov A.T., Dyuzhev N.A., Samuel I.D.
|
Vol 53, No 13 (2019) |
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs |
|
Shrey Arvind Singh ., Shweta Tripathi .
|
Vol 53, No 10 (2019) |
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates |
|
Novikov A.V., Yurasov D.V., Baidakova N.A., Bushuykin P.A., Andreev B.A., Yunin P.A., Drozdov M.N., Yablonskiy A.N., Kalinnikov M.A., Krasilnik Z.F.
|
Vol 53, No 3 (2019) |
Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches |
|
Tsai J., Lin P., Chen Y., Liou S., Niu J.
|
Vol 50, No 8 (2016) |
Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology |
|
Betekbaev A.A., Mukashev B.N., Pelissier L., Lay P., Fortin G., Bounaas L., Skakov D.M., Kalygulov D.A., Turmagambetov T.S., Lee V.V.
|
Vol 53, No 9 (2019) |
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices |
|
Obolenskaya E.S., Ivanov A.S., Pavelyev D.G., Kozlov V.A., Vasilev A.P.
|
Vol 53, No 10 (2019) |
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors |
|
Shobolova T.A., Korotkov A.V., Petryakova E.V., Lipatnikov A.V., Puzanov A.S., Obolensky S.V., Kozlov V.A.
|
Vol 51, No 8 (2017) |
Complex structure of optical transitions from the core d-levels of InAs and InSb crystals |
|
Sobolev V.V., Perevoshchikov D.A.
|
Vol 52, No 5 (2018) |
Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer |
|
Mikoushkin V.M., Bryzgalov V.V., Nikonov S.Y., Solonitsyna A.P., Marchenko D.E.
|
Vol 50, No 2 (2016) |
Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters |
|
Terekhov V.A., Terukov E.I., Undalov Y.K., Parinova E.V., Spirin D.E., Seredin P.V., Minakov D.A., Domashevskaya E.P.
|
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