| Issue |
Title |
File |
| Vol 52, No 5 (2018) |
Biexciton Binding Energy in Spherical Quantum Dots with Γ8 Valence Band |
|
|
Golovatenko A.A., Semina M.A., Rodina A.V., Shubina T.V.
|
| Vol 52, No 1 (2018) |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
|
|
Nadtochiy A.M., Mintairov S.A., Kalyuzhnyy N.A., Rouvimov S.S., Nevedomskii V.N., Maximov M.V., Zhukov A.E.
|
| Vol 50, No 5 (2016) |
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
|
|
Popov V.P., Ilnitskii M.A., Zhanaev E.D., Myakon’kich A.V., Rudenko K.V., Glukhov A.V.
|
| Vol 52, No 12 (2018) |
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures |
|
|
Spirin K.E., Gaponova D.M., Marem’yanin K.V., Rumyantsev V.V., Gavrilenko V.I., Mikhailov N.N., Dvoretsky S.A.
|
| Vol 53, No 6 (2019) |
Bismuth-Telluride-Based Radiation Thermopiles Prepared by Pulsed Laser Deposition |
|
|
Shupenev A.E., Korshunov I.S., Iliin A.S., Osipkov A.S., Grigoryants A.G.
|
| Vol 53, No 1 (2019) |
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining |
|
|
Tyschenko I.E., Zhanaev E.D., Popov V.P.
|
| Vol 53, No 11 (2019) |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
|
|
Davydov V.Y., Jmerik V.N., Roginskii E.M., Kitaev Y.E., Beltukov Y.M., Smirnov M.B., Nechaev D.V., Smirnov A.N., Eliseyev I.A., Brunkov P.N., Ivanov S.V.
|
| Vol 50, No 12 (2016) |
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs |
|
|
Ushanov V.I., Chaldyshev V.V., Preobrazhenskii V.V., Putyato M.A., Semyagin B.R.
|
| Vol 52, No 15 (2018) |
Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating |
|
|
Hang Thi Nguyen ., Yakubov A.O., Lazarenko P.I., Volkova A.V., Sherchenkov A.A., Kozyukhin S.A.
|
| Vol 52, No 5 (2018) |
Calculation of Energy States of Excitons in Square Quantum Wells |
|
|
Belov P.A.
|
| Vol 52, No 11 (2018) |
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers |
|
|
Kozlov D.V., Rumyantsev V.V., Morozov S.V., Kadykov A.M., Fadeev M.A., Hübers H., Gavrilenko V.I.
|
| Vol 52, No 9 (2018) |
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions |
|
|
Okulich E.V., Okulich V.I., Tetelbaum D.I.
|
| Vol 50, No 9 (2016) |
Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide |
|
|
Altuhov V.I., Kasyanenko I.S., Sankin A.V., Bilalov B.A., Sigov A.S.
|
| Vol 51, No 6 (2017) |
Calculation of the thermal conductivity of nanostructured Bi2Te3 with the real phonon spectrum taken into account |
|
|
Bulat L.P., Pshenay-Severin D.A., Osvenskii V.B., Parkhomenko Y.N.
|
| Vol 51, No 11 (2017) |
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |
|
|
Murel A.V., Shmagin V.B., Krukov V.L., Strelchenko S.S., Surovegina E.A., Shashkin V.I.
|
| Vol 53, No 14 (2019) |
Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting |
|
|
Emelyanov V.M., Pokrovskiy P.V., Kalyuzhnyy N.A., Nakhimovich M.V., Shvarts M.Z.
|
| Vol 53, No 12 (2019) |
Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors |
|
|
Muhammad Tariq Saeed Chani ., Karimov K.S., Asiri A.M.
|
| Vol 53, No 4 (2019) |
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies |
|
|
Bazhenov N.L., Mynbaev K.D., Semakova A.A., Zegrya G.G.
|
| Vol 50, No 8 (2016) |
Carrier velocity effect on carbon nanotube Schottky contact |
|
|
Fathi A., Ahmadi M.T., Ismail R.
|
| Vol 50, No 12 (2016) |
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures |
|
|
Varavin V.S., Vasilyev V.V., Guzev A.A., Dvoretsky S.A., Kovchavtsev A.P., Marin D.V., Sabinina I.V., Sidorov Y.G., Sidorov G.Y., Tsarenko A.V., Yakushev M.V.
|
| Vol 51, No 8 (2017) |
CeB6 thin films produced on different substrates by electron-beam deposition |
|
|
Kuzanyan A.A., Kuzanyan A.S., Badalyan G.R., Petrosyan S.I., Vardanyan V.O., Gurin V.N., Volkov M.P., Pilosyan S.K.
|
| Vol 52, No 2 (2018) |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
|
|
Ratnikov V.V., Sheglov M.P., Ber B.Y., Kazantsev D.Y., Osinnykh I.V., Malin T.V., Zhuravlev K.S.
|
| Vol 50, No 8 (2016) |
Changes in the conductivity of lead-selenide thin films after plasma etching |
|
|
Zimin S.P., Amirov I.I., Naumov V.V.
|
| Vol 53, No 11 (2019) |
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |
|
|
Levitskii Y.V., Mitrofanov M.I., Voznyuk G.V., Nikolayev D.N., Mizerov M.N., Evtikhiev V.P.
|
| Vol 51, No 9 (2017) |
Characteristic properties of macroporous silicon sintering in an argon atmosphere |
|
|
Astrova E.V., Preobrazhenskiy N.E., Pavlov S.I., Voronkov V.B.
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