Issue |
Title |
File |
Vol 50, No 5 (2016) |
Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure |
|
Gusev A.I., Sadovnikov S.I.
|
Vol 51, No 12 (2017) |
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential |
|
Bovkun L.S., Ikonnikov A.V., Aleshkin V.Y., Krishtopenko S.S., Antonov A.V., Spirin K.E., Mikhailov N.N., Dvoretsky S.A., Gavrilenko V.I.
|
Vol 52, No 5 (2018) |
Air-Oxidation of Nb Nano-Films |
|
Lubenchenko A.V., Batrakov A.A., Ivanov D.A., Lubenchenko O.I., Lashkov I.A., Pavolotsky A.B., Schleicher B., Albert N., Nielsch K.
|
Vol 51, No 12 (2017) |
Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications |
|
Maache M., Devers T., Chala A.
|
Vol 52, No 13 (2018) |
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |
|
Khvostikov V.P., Kalinovskiy V.S., Sorokina S.V., Shvarts M.Z., Potapovich N.S., Khvostikova O.A., Vlasov A.S., Andreev V.M.
|
Vol 52, No 12 (2018) |
All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating |
|
Shashkin I.S., Soboleva O.S., Gavrina P.S., Zolotarev V.V., Slipchenko S.O., Pikhtin N.A.
|
Vol 51, No 4 (2017) |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures |
|
Slapovskiy D.N., Pavlov A.Y., Pavlov V.Y., Klekovkin A.V.
|
Vol 51, No 3 (2017) |
AlN/GaN heterostructures for normally-off transistors |
|
Zhuravlev K.S., Malin T.V., Mansurov V.G., Tereshenko O.E., Abgaryan K.K., Reviznikov D.L., Zemlyakov V.E., Egorkin V.I., Parnes Y.M., Tikhomirov V.G., Prosvirin I.P.
|
Vol 52, No 5 (2018) |
Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography |
|
Lukyanenko A.V., Smolyarova T.E.
|
Vol 51, No 11 (2017) |
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection |
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
Vol 53, No 16 (2019) |
An Estimate for the Nonradiative Linewidths of the Quasibound Electron-Hole Pairs in Narrow Quantum Wells |
|
Belov P.A.
|
Vol 53, No 13 (2019) |
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications |
|
Chugh N., Kumar M., Bhattacharya M., Gupta R.S.
|
Vol 52, No 12 (2018) |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
|
Venediktov M.M., Dukov D.I., Krevskiy M.A., Metelkin I.O., Chukov G.V., Elesin V.V., Obolensky S.V., Bozhen’kina A.D., Tarasova E.A., Fefelov A.G.
|
Vol 51, No 8 (2017) |
Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)]m[(Bi, Sb)2(Te, Se)3]n (m, n = 0, 1, 2,...) family within the theory of closely packed spheres |
|
Korzhuev M.A., Mihajlova A.B., Kretova M.A., Avilov E.S.
|
Vol 52, No 10 (2018) |
Analysis of the Features of Hot-Carrier Degradation in FinFETs |
|
Makarov A.A., Tyaginov S.E., Kaczer B., Jech M., Chasin A., Grill A., Hellings G., Vexler M.I., Linten D., Grasser T.
|
Vol 51, No 11 (2017) |
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |
|
Tarasova E.A., Obolensky S.V., Galkin O.E., Hananova A.V., Makarov A.B.
|
Vol 51, No 2 (2017) |
Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors |
|
Yurkov S.N., Mnatsakanov T.T., Levinshtein M.E., Tandoev A.G., Palmour J.W.
|
Vol 53, No 6 (2019) |
Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory |
|
Morozova N.K., Miroshnikova I.N., Galstyan V.G.
|
Vol 52, No 7 (2018) |
Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates |
|
Ivanenko I.P., Krasnoshchekov S.V., Pavlikov A.V.
|
Vol 52, No 15 (2018) |
Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy |
|
Iusipova I.A.
|
Vol 53, No 13 (2019) |
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation |
|
Patel S., Kumar D., Chaurasiya N.K., Tripathi S.
|
Vol 50, No 11 (2016) |
Anharmonic Bloch oscillations of electrons in electrically biased superlattices |
|
Ivanov K.A., Girshova E.I., Kaliteevski M.A., Clark S.J., Gallant A.J.
|
Vol 53, No 3 (2019) |
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals |
|
Badalova Z.I., Abdullayev N.A., Azhdarov G.H., Aliguliyeva K.V., Gahramanov S.S., Nemov S.A., Mamedov N.T.
|
Vol 51, No 10 (2017) |
Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell |
|
Gutkin A.A., Averkiev N.S.
|
Vol 50, No 11 (2016) |
Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films |
|
Klimov A.E., Epov V.S.
|
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