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卷 50, 编号 5 (2016) Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure
Gusev A., Sadovnikov S.
卷 51, 编号 12 (2017) Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential
Bovkun L., Ikonnikov A., Aleshkin V., Krishtopenko S., Antonov A., Spirin K., Mikhailov N., Dvoretsky S., Gavrilenko V.
卷 52, 编号 5 (2018) Air-Oxidation of Nb Nano-Films
Lubenchenko A., Batrakov A., Ivanov D., Lubenchenko O., Lashkov I., Pavolotsky A., Schleicher B., Albert N., Nielsch K.
卷 51, 编号 12 (2017) Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications
Maache M., Devers T., Chala A.
卷 52, 编号 13 (2018) AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation
Khvostikov V., Kalinovskiy V., Sorokina S., Shvarts M., Potapovich N., Khvostikova O., Vlasov A., Andreev V.
卷 52, 编号 12 (2018) All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating
Shashkin I., Soboleva O., Gavrina P., Zolotarev V., Slipchenko S., Pikhtin N.
卷 51, 编号 4 (2017) Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures
Slapovskiy D., Pavlov A., Pavlov V., Klekovkin A.
卷 51, 编号 3 (2017) AlN/GaN heterostructures for normally-off transistors
Zhuravlev K., Malin T., Mansurov V., Tereshenko O., Abgaryan K., Reviznikov D., Zemlyakov V., Egorkin V., Parnes Y., Tikhomirov V., Prosvirin I.
卷 52, 编号 5 (2018) Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography
Lukyanenko A., Smolyarova T.
卷 51, 编号 11 (2017) Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection
Polischuk O., Fateev D., Popov V.
卷 53, 编号 16 (2019) An Estimate for the Nonradiative Linewidths of the Quasibound Electron-Hole Pairs in Narrow Quantum Wells
Belov P.
卷 53, 编号 13 (2019) Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications
Chugh N., Kumar M., Bhattacharya M., Gupta R.
卷 52, 编号 12 (2018) Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
Venediktov M., Dukov D., Krevskiy M., Metelkin I., Chukov G., Elesin V., Obolensky S., Bozhen’kina A., Tarasova E., Fefelov A.
卷 51, 编号 8 (2017) Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)]m[(Bi, Sb)2(Te, Se)3]n (m, n = 0, 1, 2,...) family within the theory of closely packed spheres
Korzhuev M., Mihajlova A., Kretova M., Avilov E.
卷 52, 编号 10 (2018) Analysis of the Features of Hot-Carrier Degradation in FinFETs
Makarov A., Tyaginov S., Kaczer B., Jech M., Chasin A., Grill A., Hellings G., Vexler M., Linten D., Grasser T.
卷 51, 编号 11 (2017) Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
Tarasova E., Obolensky S., Galkin O., Hananova A., Makarov A.
卷 51, 编号 2 (2017) Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors
Yurkov S., Mnatsakanov T., Levinshtein M., Tandoev A., Palmour J.
卷 53, 编号 6 (2019) Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory
Morozova N., Miroshnikova I., Galstyan V.
卷 52, 编号 7 (2018) Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates
Ivanenko I., Krasnoshchekov S., Pavlikov A.
卷 52, 编号 15 (2018) Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy
Iusipova I.
卷 53, 编号 13 (2019) Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation
Patel S., Kumar D., Chaurasiya N., Tripathi S.
卷 50, 编号 11 (2016) Anharmonic Bloch oscillations of electrons in electrically biased superlattices
Ivanov K., Girshova E., Kaliteevski M., Clark S., Gallant A.
卷 53, 编号 3 (2019) Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals
Badalova Z., Abdullayev N., Azhdarov G., Aliguliyeva K., Gahramanov S., Nemov S., Mamedov N.
卷 51, 编号 10 (2017) Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell
Gutkin A., Averkiev N.
卷 50, 编号 11 (2016) Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films
Klimov A., Epov V.
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