| Шығарылым |
Атауы |
Файл |
| Том 52, № 1 (2018) |
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases |
(Eng)
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Shtrom I., Sibirev N., Ubiivovk E., Samsonenko Y., Khrebtov A., Reznik R., Bouravleuv A., Cirlin G.
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| Том 52, № 1 (2018) |
Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field |
(Eng)
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Chernenko A., Brichkin A., Novikov S., Schneider C., Hoefling S.
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| Том 52, № 1 (2018) |
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells |
(Eng)
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Gudina S., Neverov V., Ilchenko E., Bogolubskii A., Harus G., Shelushinina N., Podgornykh S., Yakunin M., Mikhailov N., Dvoretsky S.
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| Том 52, № 1 (2018) |
Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires |
(Eng)
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Trukhin V., Bouravleuv A., Mustafin I., Cirlin G., Kakko J., Lipsanen H.
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| Том 51, № 12 (2017) |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
(Eng)
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Ikonnikov A., Bovkun L., Rumyantsev V., Krishtopenko S., Aleshkin V., Kadykov A., Orlita M., Potemski M., Gavrilenko V., Morozov S., Dvoretsky S., Mikhailov N.
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| Том 51, № 12 (2017) |
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen |
(Eng)
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Bushuykin P., Novikov A., Andreev B., Lobanov D., Yunin P., Skorokhodov E., Krasil’nikova L., Demidov E., Savchenko G., Davydov V.
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| Том 51, № 12 (2017) |
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
(Eng)
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Baidakova N., Verbus V., Morozova E., Novikov A., Skorohodov E., Shaleev M., Yurasov D., Hombe A., Kurokawa Y., Usami N.
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| Том 51, № 12 (2017) |
Manifestation of PT symmetry in the exciton spectra of quantum wells |
(Eng)
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Kochereshko V., Kotova L., Khakhalin I., Cox R., Mariette H., Andre R., Bukari H., Ivanov S.
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| Том 51, № 12 (2017) |
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations |
(Eng)
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Yurasov D., Drozdov M., Shmagin V., Novikov A.
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| Том 51, № 12 (2017) |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
(Eng)
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Rumyantsev V., Kadykov A., Fadeev M., Dubinov A., Utochkin V., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
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| Том 51, № 12 (2017) |
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential |
(Eng)
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Bovkun L., Ikonnikov A., Aleshkin V., Krishtopenko S., Antonov A., Spirin K., Mikhailov N., Dvoretsky S., Gavrilenko V.
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| Том 51, № 11 (2017) |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
(Eng)
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Okhapkin A., Korolyov S., Yunin P., Drozdov M., Kraev S., Khrykin O., Shashkin V.
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| Том 51, № 11 (2017) |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
(Eng)
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Baidus N., Aleshkin V., Dubinov A., Kudryavtsev K., Nekorkin S., Novikov A., Pavlov D., Rykov A., Sushkov A., Shaleev M., Yunin P., Yurasov D., Yablonskiy A., Krasilnik Z.
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| Том 51, № 11 (2017) |
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures |
(Eng)
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Alexeev A., Mamaev V., Petrov S.
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| Том 51, № 11 (2017) |
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures |
(Eng)
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Plankina S., Vikhrova O., Zvonkov B., Nezhdanov A., Pashen’kin I.
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| Том 51, № 11 (2017) |
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection |
(Eng)
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Polischuk O., Fateev D., Popov V.
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| Том 51, № 11 (2017) |
Optical thyristor based on GaAs/InGaP materials |
(Eng)
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Zvonkov B., Baidus N., Nekorkin S., Vikhrova O., Zdoroveyshev A., Kudrin A., Kotomina V.
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| Том 51, № 11 (2017) |
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons |
(Eng)
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Zabavichev I., Potekhin A., Puzanov A., Obolenskiy S., Kozlov V.
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| Том 51, № 11 (2017) |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
(Eng)
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Gorshkov A., Volkova N., Voronin P., Zdoroveyshchev A., Istomin L., Pavlov D., Usov Y., Levichev S.
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| Том 51, № 11 (2017) |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
(Eng)
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Reznik R., Kotlyar K., Shtrom I., Soshnikov I., Kukushkin S., Osipov A., Cirlin G.
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| Том 51, № 11 (2017) |
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity |
(Eng)
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Derebezov I., Gaisler V., Gaisler A., Dmitriev D., Toropov A., Fischbach S., Schlehahn A., Kaganskiy A., Heindel T., Bounouar S., Rodt S., Reitzenstein S.
|
| Том 51, № 11 (2017) |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
(Eng)
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Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Novikov A., Rykov A., Samartsev I., Fefelov A., Yurasov D., Krasilnik Z.
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| Том 51, № 11 (2017) |
Thermoelectric effects in nanoscale layers of manganese silicide |
(Eng)
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Erofeeva I., Dorokhin M., Lesnikov V., Kuznetsov Y., Zdoroveyshchev A., Pitirimova E.
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| Том 51, № 11 (2017) |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
(Eng)
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Borisov V., Kuvshinova N., Kurochka S., Sizov V., Stepushkin M., Temiryazev A.
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| Том 51, № 11 (2017) |
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures |
(Eng)
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Degtyarev V., Khazanova S., Konakov A.
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| Нәтижелер 40 - 1/25 |
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