| Issue |
Title |
File |
| Vol 52, No 1 (2018) |
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases |
(Eng)
|
|
Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E.
|
| Vol 52, No 1 (2018) |
Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field |
(Eng)
|
|
Chernenko A.V., Brichkin A.S., Novikov S.I., Schneider C., Hoefling S.
|
| Vol 52, No 1 (2018) |
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells |
(Eng)
|
|
Gudina S.V., Neverov V.N., Ilchenko E.V., Bogolubskii A.S., Harus G.I., Shelushinina N.G., Podgornykh S.M., Yakunin M.V., Mikhailov N.N., Dvoretsky S.A.
|
| Vol 52, No 1 (2018) |
Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires |
(Eng)
|
|
Trukhin V.N., Bouravleuv A.D., Mustafin I.A., Cirlin G.E., Kakko J.P., Lipsanen H.
|
| Vol 51, No 12 (2017) |
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
(Eng)
|
|
Baidakova N.A., Verbus V.A., Morozova E.E., Novikov A.V., Skorohodov E.V., Shaleev M.V., Yurasov D.V., Hombe A., Kurokawa Y., Usami N.
|
| Vol 51, No 12 (2017) |
Manifestation of PT symmetry in the exciton spectra of quantum wells |
(Eng)
|
|
Kochereshko V.P., Kotova L.V., Khakhalin I.S., Cox R.T., Mariette H., Andre R., Bukari H., Ivanov S.V.
|
| Vol 51, No 12 (2017) |
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations |
(Eng)
|
|
Yurasov D.V., Drozdov M.N., Shmagin V.B., Novikov A.V.
|
| Vol 51, No 12 (2017) |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
(Eng)
|
|
Rumyantsev V.V., Kadykov A.M., Fadeev M.A., Dubinov A.A., Utochkin V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
|
| Vol 51, No 12 (2017) |
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential |
(Eng)
|
|
Bovkun L.S., Ikonnikov A.V., Aleshkin V.Y., Krishtopenko S.S., Antonov A.V., Spirin K.E., Mikhailov N.N., Dvoretsky S.A., Gavrilenko V.I.
|
| Vol 51, No 12 (2017) |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
(Eng)
|
|
Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V., Krishtopenko S.S., Aleshkin V.Y., Kadykov A.M., Orlita M., Potemski M., Gavrilenko V.I., Morozov S.V., Dvoretsky S.A., Mikhailov N.N.
|
| Vol 51, No 12 (2017) |
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen |
(Eng)
|
|
Bushuykin P.A., Novikov A.V., Andreev B.A., Lobanov D.N., Yunin P.A., Skorokhodov E.V., Krasil’nikova L.V., Demidov E.V., Savchenko G.M., Davydov V.Y.
|
| Vol 51, No 11 (2017) |
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection |
(Eng)
|
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
| Vol 51, No 11 (2017) |
Optical thyristor based on GaAs/InGaP materials |
(Eng)
|
|
Zvonkov B.N., Baidus N.V., Nekorkin S.M., Vikhrova O.V., Zdoroveyshev A.V., Kudrin A.V., Kotomina V.E.
|
| Vol 51, No 11 (2017) |
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons |
(Eng)
|
|
Zabavichev I.Y., Potekhin A.A., Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
| Vol 51, No 11 (2017) |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
(Eng)
|
|
Gorshkov A.P., Volkova N.S., Voronin P.G., Zdoroveyshchev A.V., Istomin L.A., Pavlov D.A., Usov Y.V., Levichev S.B.
|
| Vol 51, No 11 (2017) |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
(Eng)
|
|
Reznik R.R., Kotlyar K.P., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E.
|
| Vol 51, No 11 (2017) |
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity |
(Eng)
|
|
Derebezov I.A., Gaisler V.A., Gaisler A.V., Dmitriev D.V., Toropov A.I., Fischbach S., Schlehahn A., Kaganskiy A., Heindel T., Bounouar S., Rodt S., Reitzenstein S.
|
| Vol 51, No 11 (2017) |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
(Eng)
|
|
Aleshkin V.Y., Baidus N.V., Dubinov A.A., Kudryavtsev K.E., Nekorkin S.M., Novikov A.V., Rykov A.V., Samartsev I.V., Fefelov A.G., Yurasov D.V., Krasilnik Z.F.
|
| Vol 51, No 11 (2017) |
Thermoelectric effects in nanoscale layers of manganese silicide |
(Eng)
|
|
Erofeeva I.V., Dorokhin M.V., Lesnikov V.P., Kuznetsov Y.M., Zdoroveyshchev A.V., Pitirimova E.A.
|
| Vol 51, No 11 (2017) |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
(Eng)
|
|
Borisov V.I., Kuvshinova N.A., Kurochka S.P., Sizov V.E., Stepushkin M.V., Temiryazev A.G.
|
| Vol 51, No 11 (2017) |
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures |
(Eng)
|
|
Degtyarev V.E., Khazanova S.V., Konakov A.A.
|
| Vol 51, No 11 (2017) |
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |
(Eng)
|
|
Murel A.V., Shmagin V.B., Krukov V.L., Strelchenko S.S., Surovegina E.A., Shashkin V.I.
|
| Vol 51, No 11 (2017) |
Features of the selective manganese doping of GaAs structures |
(Eng)
|
|
Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Dorokhin M.V., Pavlov D.A., Antonov I.N., Drozdov M.N., Usov Y.V.
|
| Vol 51, No 11 (2017) |
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |
(Eng)
|
|
Tarasova E.A., Obolensky S.V., Galkin O.E., Hananova A.V., Makarov A.B.
|
| Vol 51, No 11 (2017) |
Contactless characterization of manganese and carbon delta-layers in gallium arsenide |
(Eng)
|
|
Komkov O.S., Kudrin A.V.
|
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