| 期 |
标题 |
文件 |
| 卷 53, 编号 1 (2019) |
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure |
|
|
Kuzmichev N., Vasyutin M.
|
| 卷 53, 编号 8 (2019) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
|
|
Tyschenko I., Voelskow M., Mikhaylov A., Tetelbaum D.
|
| 卷 52, 编号 13 (2018) |
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature |
|
|
Ushanov V., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
|
| 卷 51, 编号 1 (2017) |
Diffusion of interstitial magnesium in dislocation-free silicon |
|
|
Shuman V., Lavrent’ev A., Astrov Y., Lodygin A., Portsel L.
|
| 卷 51, 编号 10 (2017) |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
|
|
Tyschenko I., Cherkov A.
|
| 卷 53, 编号 5 (2019) |
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode |
|
|
Melnikov A., Tarasov O., Chekov A., Bashkin M.
|
| 卷 52, 编号 14 (2018) |
Diode Lasers with Near-Surface Active Region |
|
|
Payusov A., Gordeev N., Serin A., Kulagina M., Kalyuzhnyy N., Mintairov S., Maximov M., Zhukov A.
|
| 卷 52, 编号 16 (2018) |
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices |
|
|
Seyidov M., Suleymanov R., Şale Y., Kandemir B.
|
| 卷 52, 编号 5 (2018) |
Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine |
|
|
Smolyarova T., Lukyanenko A., Tarasov A., Sokolov A.
|
| 卷 50, 编号 9 (2016) |
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector |
|
|
Chatbouri S., Troudi M., Sghaier N., Kalboussi A., Aimez V., Drouin D., Souifi A.
|
| 卷 53, 编号 3 (2019) |
Discovery of III–V Semiconductors: Physical Properties and Application |
|
|
Mikhailova M., Moiseev K., Yakovlev Y.
|
| 卷 53, 编号 2 (2019) |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
|
|
Sobolev N., Kalyadin A., Sakharov V., Serenkov I., Shek E., Parshin E., Melesov N., Simakin C.
|
| 卷 52, 编号 7 (2018) |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
|
|
Emtsev V., Gushchina E., Petrov V., Tal’nishnih N., Chernyakov A., Shabunina E., Shmidt N., Usikov A., Kartashova A., Zybin A., Kozlovski V., Kudoyarov M., Saharov A., Oganesyan A., Poloskin D., Lundin V.
|
| 卷 53, 编号 6 (2019) |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
|
|
Yarykin N., Shuman V., Portsel L., Lodygin A., Astrov Y., Abrosimov N., Weber J.
|
| 卷 53, 编号 11 (2019) |
Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |
|
|
Titov A., Karabeshkin K., Karaseov P., Struchkov A.
|
| 卷 51, 编号 10 (2017) |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
|
|
Dikareva N., Zvonkov B., Vikhrova O., Nekorkin S., Aleshkin V., Dubinov A.
|
| 卷 52, 编号 14 (2018) |
Dynamic Compression of Spinor Exciton-Polariton Systems in Semiconductor Microcavities |
|
|
Demenev A., Brichkin A., Gavrilov S., Gippius N., Kulakovskii V.
|
| 卷 50, 编号 11 (2016) |
Dynamic generation of spin-wave currents in hybrid structures |
|
|
Lyapilin I., Okorokov M.
|
| 卷 50, 编号 8 (2016) |
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer |
|
|
Sergeev V., Hodakov A.
|
| 卷 52, 编号 8 (2018) |
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation |
|
|
Elistratova M., Poloskin D., Goryachev D., Zakharova I., Sreseli O.
|
| 卷 51, 编号 4 (2017) |
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions |
|
|
Pashkovskii A.
|
| 卷 50, 编号 11 (2016) |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
|
|
Shamirzaev V., Gaisler V., Shamirzaev T.
|
| 卷 53, 编号 12 (2019) |
Edge Doping in Graphene Devices on SiO2 Substrates |
|
|
Vasilyeva G., Smirnov D., Vasilyev Y., Greshnov A., Haug R.
|
| 卷 53, 编号 8 (2019) |
Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals |
|
|
Avanesyan V., Piskovatskova I., Stozharov V.
|
| 卷 52, 编号 13 (2018) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
|
|
Seredin P., Leiste H., Beltiukov A., Arsentyev I., Mizerov A., Khudyakov Y., Lenshin A., Kondrashin M., Zolotukhin D., Goloshchapov D., Rinke M.
|
| 201 - 225 的 1443 信息 |
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