| Edição |
Título |
Arquivo |
| Volume 53, Nº 1 (2019) |
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure |
|
|
Kuzmichev N., Vasyutin M.
|
| Volume 53, Nº 8 (2019) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
|
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Tyschenko I., Voelskow M., Mikhaylov A., Tetelbaum D.
|
| Volume 52, Nº 13 (2018) |
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature |
|
|
Ushanov V., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
|
| Volume 51, Nº 1 (2017) |
Diffusion of interstitial magnesium in dislocation-free silicon |
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Shuman V., Lavrent’ev A., Astrov Y., Lodygin A., Portsel L.
|
| Volume 51, Nº 10 (2017) |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
|
|
Tyschenko I., Cherkov A.
|
| Volume 53, Nº 5 (2019) |
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode |
|
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Melnikov A., Tarasov O., Chekov A., Bashkin M.
|
| Volume 52, Nº 14 (2018) |
Diode Lasers with Near-Surface Active Region |
|
|
Payusov A., Gordeev N., Serin A., Kulagina M., Kalyuzhnyy N., Mintairov S., Maximov M., Zhukov A.
|
| Volume 52, Nº 16 (2018) |
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices |
|
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Seyidov M., Suleymanov R., Şale Y., Kandemir B.
|
| Volume 52, Nº 5 (2018) |
Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine |
|
|
Smolyarova T., Lukyanenko A., Tarasov A., Sokolov A.
|
| Volume 50, Nº 9 (2016) |
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector |
|
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Chatbouri S., Troudi M., Sghaier N., Kalboussi A., Aimez V., Drouin D., Souifi A.
|
| Volume 53, Nº 3 (2019) |
Discovery of III–V Semiconductors: Physical Properties and Application |
|
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Mikhailova M., Moiseev K., Yakovlev Y.
|
| Volume 53, Nº 2 (2019) |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
|
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Sobolev N., Kalyadin A., Sakharov V., Serenkov I., Shek E., Parshin E., Melesov N., Simakin C.
|
| Volume 52, Nº 7 (2018) |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
|
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Emtsev V., Gushchina E., Petrov V., Tal’nishnih N., Chernyakov A., Shabunina E., Shmidt N., Usikov A., Kartashova A., Zybin A., Kozlovski V., Kudoyarov M., Saharov A., Oganesyan A., Poloskin D., Lundin V.
|
| Volume 53, Nº 6 (2019) |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
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Yarykin N., Shuman V., Portsel L., Lodygin A., Astrov Y., Abrosimov N., Weber J.
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| Volume 53, Nº 11 (2019) |
Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |
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Titov A., Karabeshkin K., Karaseov P., Struchkov A.
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| Volume 51, Nº 10 (2017) |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
|
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Dikareva N., Zvonkov B., Vikhrova O., Nekorkin S., Aleshkin V., Dubinov A.
|
| Volume 52, Nº 14 (2018) |
Dynamic Compression of Spinor Exciton-Polariton Systems in Semiconductor Microcavities |
|
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Demenev A., Brichkin A., Gavrilov S., Gippius N., Kulakovskii V.
|
| Volume 50, Nº 11 (2016) |
Dynamic generation of spin-wave currents in hybrid structures |
|
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Lyapilin I., Okorokov M.
|
| Volume 50, Nº 8 (2016) |
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer |
|
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Sergeev V., Hodakov A.
|
| Volume 52, Nº 8 (2018) |
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation |
|
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Elistratova M., Poloskin D., Goryachev D., Zakharova I., Sreseli O.
|
| Volume 51, Nº 4 (2017) |
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions |
|
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Pashkovskii A.
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| Volume 50, Nº 11 (2016) |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
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Shamirzaev V., Gaisler V., Shamirzaev T.
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| Volume 53, Nº 12 (2019) |
Edge Doping in Graphene Devices on SiO2 Substrates |
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Vasilyeva G., Smirnov D., Vasilyev Y., Greshnov A., Haug R.
|
| Volume 53, Nº 8 (2019) |
Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals |
|
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Avanesyan V., Piskovatskova I., Stozharov V.
|
| Volume 52, Nº 13 (2018) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
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Seredin P., Leiste H., Beltiukov A., Arsentyev I., Mizerov A., Khudyakov Y., Lenshin A., Kondrashin M., Zolotukhin D., Goloshchapov D., Rinke M.
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