| Выпуск |
Название |
Файл |
| Том 53, № 1 (2019) |
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure |
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Kuzmichev N., Vasyutin M.
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| Том 53, № 8 (2019) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
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Tyschenko I., Voelskow M., Mikhaylov A., Tetelbaum D.
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| Том 52, № 13 (2018) |
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature |
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Ushanov V., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
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| Том 51, № 1 (2017) |
Diffusion of interstitial magnesium in dislocation-free silicon |
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Shuman V., Lavrent’ev A., Astrov Y., Lodygin A., Portsel L.
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| Том 51, № 10 (2017) |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
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Tyschenko I., Cherkov A.
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| Том 53, № 5 (2019) |
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode |
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Melnikov A., Tarasov O., Chekov A., Bashkin M.
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| Том 52, № 14 (2018) |
Diode Lasers with Near-Surface Active Region |
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Payusov A., Gordeev N., Serin A., Kulagina M., Kalyuzhnyy N., Mintairov S., Maximov M., Zhukov A.
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| Том 52, № 16 (2018) |
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices |
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Seyidov M., Suleymanov R., Şale Y., Kandemir B.
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| Том 52, № 5 (2018) |
Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine |
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Smolyarova T., Lukyanenko A., Tarasov A., Sokolov A.
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| Том 50, № 9 (2016) |
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector |
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Chatbouri S., Troudi M., Sghaier N., Kalboussi A., Aimez V., Drouin D., Souifi A.
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| Том 53, № 3 (2019) |
Discovery of III–V Semiconductors: Physical Properties and Application |
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Mikhailova M., Moiseev K., Yakovlev Y.
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| Том 53, № 2 (2019) |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
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Sobolev N., Kalyadin A., Sakharov V., Serenkov I., Shek E., Parshin E., Melesov N., Simakin C.
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| Том 52, № 7 (2018) |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
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Emtsev V., Gushchina E., Petrov V., Tal’nishnih N., Chernyakov A., Shabunina E., Shmidt N., Usikov A., Kartashova A., Zybin A., Kozlovski V., Kudoyarov M., Saharov A., Oganesyan A., Poloskin D., Lundin V.
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| Том 53, № 6 (2019) |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
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Yarykin N., Shuman V., Portsel L., Lodygin A., Astrov Y., Abrosimov N., Weber J.
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| Том 53, № 11 (2019) |
Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |
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Titov A., Karabeshkin K., Karaseov P., Struchkov A.
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| Том 51, № 10 (2017) |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
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Dikareva N., Zvonkov B., Vikhrova O., Nekorkin S., Aleshkin V., Dubinov A.
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| Том 52, № 14 (2018) |
Dynamic Compression of Spinor Exciton-Polariton Systems in Semiconductor Microcavities |
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Demenev A., Brichkin A., Gavrilov S., Gippius N., Kulakovskii V.
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| Том 50, № 11 (2016) |
Dynamic generation of spin-wave currents in hybrid structures |
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Lyapilin I., Okorokov M.
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| Том 50, № 8 (2016) |
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer |
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Sergeev V., Hodakov A.
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| Том 52, № 8 (2018) |
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation |
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Elistratova M., Poloskin D., Goryachev D., Zakharova I., Sreseli O.
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| Том 51, № 4 (2017) |
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions |
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Pashkovskii A.
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| Том 50, № 11 (2016) |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
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Shamirzaev V., Gaisler V., Shamirzaev T.
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| Том 53, № 12 (2019) |
Edge Doping in Graphene Devices on SiO2 Substrates |
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Vasilyeva G., Smirnov D., Vasilyev Y., Greshnov A., Haug R.
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| Том 53, № 8 (2019) |
Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals |
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Avanesyan V., Piskovatskova I., Stozharov V.
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| Том 52, № 13 (2018) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
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Seredin P., Leiste H., Beltiukov A., Arsentyev I., Mizerov A., Khudyakov Y., Lenshin A., Kondrashin M., Zolotukhin D., Goloshchapov D., Rinke M.
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| 201 - 225 из 1443 результатов |
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