| Выпуск |
Название |
Файл |
| Том 51, № 5 (2017) |
Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures |
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Kononov N., Dorofeev S.
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| Том 52, № 13 (2018) |
Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection |
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Aleksandrov O., Ageev A., Zolotarev S.
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| Том 51, № 12 (2017) |
Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions |
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Hlali S., Hizem N., Kalboussi A.
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| Том 53, № 12 (2019) |
Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix |
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Castro R., Khanin S., Smirnov A., Kononov A.
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| Том 50, № 5 (2016) |
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM |
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Stefanovich G., Pergament A., Boriskov P., Kuroptev V., Stefanovich T.
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| Том 51, № 7 (2017) |
Charge-carrier density collapse in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
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Korzhuev M.
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| Том 53, № 9 (2019) |
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |
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Shastin V., Zhukavin R., Kovalevsky K., Tsyplenkov V., Rumyantsev V., Shengurov D., Pavlov S., Shuman V., Portsel L., Lodygin A., Astrov Y., Abrosimov N., Klopf J., Hübers H.
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| Том 50, № 7 (2016) |
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |
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Nikolaev V., Pechnikov A., Stepanov S., Sharofidinov S., Golovatenko A., Nikitina I., Smirnov A., Bugrov V., Romanov A., Brunkov P., Kirilenko D.
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| Том 51, № 6 (2017) |
Classical magnetoresistance of a two-component system induced by thermoelectric effects |
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Alekseev P., Gornyi I., Dmitriev A., Kachorovskii V., Semina M.
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| Том 52, № 14 (2018) |
Classification of Energy States of the Exciton in Square Quantum Well |
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Belov P.
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| Том 51, № 11 (2017) |
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures |
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Plankina S., Vikhrova O., Zvonkov B., Nezhdanov A., Pashen’kin I.
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| Том 52, № 14 (2018) |
CNT-Based Label-Free Electrochemical Sensing of Native DNA with Allele Single Nucleotide Polymorphism |
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Grushevskaya H., Krylova N., Lipnevich I., Babenka A., Egorova V., Chakukov R.
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| Том 53, № 5 (2019) |
Coefficient of the Performance of a Segmented Thermoelectric Cooling Leg |
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Drabkin I.
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| Том 53, № 10 (2019) |
Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation |
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Kulakovskii V., Demenev A.
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| Том 51, № 9 (2017) |
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes |
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Royz M., Baranov A., Imenkov A., Burenina D., Pivovarova A., Monakhov A., Grebenshchikova E., Yakovlev Y.
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| Том 52, № 1 (2018) |
Combined Ultramicrotomy and Atomic Force Microscopy Study of the Structure of a Bulk Heterojunction in Polymer Solar Cells |
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Alekseev A., Al-Afeef A., Hedley G., Kharintsev S., Efimov A., Yedrisov A., Dyuzhev N., Samuel I.
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| Том 53, № 13 (2019) |
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs |
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Shrey Arvind Singh ., Shweta Tripathi .
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| Том 53, № 10 (2019) |
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates |
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Novikov A., Yurasov D., Baidakova N., Bushuykin P., Andreev B., Yunin P., Drozdov M., Yablonskiy A., Kalinnikov M., Krasilnik Z.
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| Том 53, № 3 (2019) |
Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches |
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Tsai J., Lin P., Chen Y., Liou S., Niu J.
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| Том 50, № 8 (2016) |
Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology |
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Betekbaev A., Mukashev B., Pelissier L., Lay P., Fortin G., Bounaas L., Skakov D., Kalygulov D., Turmagambetov T., Lee V.
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| Том 53, № 9 (2019) |
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices |
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Obolenskaya E., Ivanov A., Pavelyev D., Kozlov V., Vasilev A.
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| Том 53, № 10 (2019) |
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors |
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Shobolova T., Korotkov A., Petryakova E., Lipatnikov A., Puzanov A., Obolensky S., Kozlov V.
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| Том 51, № 8 (2017) |
Complex structure of optical transitions from the core d-levels of InAs and InSb crystals |
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Sobolev V., Perevoshchikov D.
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| Том 52, № 5 (2018) |
Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer |
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Mikoushkin V., Bryzgalov V., Nikonov S., Solonitsyna A., Marchenko D.
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| Том 50, № 2 (2016) |
Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters |
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Terekhov V., Terukov E., Undalov Y., Parinova E., Spirin D., Seredin P., Minakov D., Domashevskaya E.
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| 101 - 125 из 1443 результатов |
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