| Выпуск |
Название |
Файл |
| Том 53, № 2 (2019) |
Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later) |
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Karandashev S., Matveev B., Remennyi M.
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| Том 50, № 7 (2016) |
Indium nanowires at the silicon surface |
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Kozhukhov A., Sheglov D., Latyshev A.
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| Том 50, № 4 (2016) |
Induced surface states of the ultrathin Ba/3C-SiC(111) interface |
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Benemanskaya G., Dementev P., Kukushkin S., Lapushkin M., Senkovskiy B., Timoshnev S.
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| Том 53, № 1 (2019) |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
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Seredin P., Goloshchapov D., Zolotukhin D., Lenshin A., Lukin A., Mizerov A., Nikitina E., Arsentyev I., Leiste H., Rinke M.
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| Том 53, № 1 (2019) |
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |
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Bannaya V., Nikitina E.
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| Том 51, № 6 (2017) |
Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing |
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Buchin E., Naumov V., Vasilyev S.
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| Том 53, № 1 (2019) |
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis |
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Khrypunov G., Meriuts A., Shelest T., Khrypunov M.
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| Том 53, № 7 (2019) |
Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium |
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Yurasov D., Baidakova N., Drozdov M., Morozova E., Kalinnikov M., Novikov A.
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| Том 53, № 2 (2019) |
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |
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Sobolev N., Aleksandrov O., Sakharov V., Serenkov I., Shek E., Kalyadin A., Parshin E., Melesov N.
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| Том 50, № 2 (2016) |
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
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Aleksandrov I., Zhuravlev K., Mansurov V.
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| Том 51, № 1 (2017) |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
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Musalinov S., Anzulevich A., Bychkov I., Gudovskikh A., Shvarts M.
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| Том 53, № 2 (2019) |
Influence of Electric Field on the Activation Energy of Local Levels in Semiconductors with Layered (GaSe) and Cubic (Ga2Se3) Structures |
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Pashayev A., Tagiyev B., Tagiyev O., Majidova V., Sadikhov I.
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| Том 52, № 3 (2018) |
Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules |
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Andreeva A., Davidyuk N., Malevskiy D., Panchak A., Sadchikov N., Chekalin A.
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| Том 53, № 13 (2019) |
Influence of Heat Treatments on the Properties of ZnO Nanorods Prepared by Hydrothermal Synthesis |
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Hyunggun Ma .
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| Том 53, № 15 (2019) |
Influence of Holes Capture Efficiency on Photoluminescence Temperature Dependence of n-AlGaAs/GaAs Quantum-Well Structures |
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Yaremenko N., Strakhov V., Karachevtseva M.
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| Том 53, № 10 (2019) |
Influence of Hydrogen on the Electrical Properties of Pd/InP Structures |
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Shutaev V., Sidorov V., Grebenshchikova E., Vlasov L., Pivovarova A., Yakovlev Y.
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| Том 52, № 13 (2018) |
Influence of Hydrogen Peroxide on the Photoanodization of n-Si in the Breakdown Mode |
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Li G., Astrova E., Lihachev A.
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| Том 53, № 16 (2019) |
Influence of Impurities on Polarization Properties of Lattice Vibrations |
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Bairamov B., Toporov V., Bayramov F.
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| Том 52, № 8 (2018) |
Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au |
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Zainabidinov S., Tursunov I., Khimmatkulov O.
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| Том 53, № 5 (2019) |
Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides |
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Pankratova D., Novitskii A., Kuskov K., Sergienko I., Leybo D., Burkov A., Konstantinov P., Khovaylo V.
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| Том 51, № 9 (2017) |
Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon |
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Sobolev N., Kalyadin A., Shek E., Shtel’makh K.
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| Том 53, № 8 (2019) |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
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Blokhin S., Bobrov M., Blokhin A., Kuzmenkov A., Maleev N., Ustinov V., Kolodeznyi E., Rochas S., Babichev A., Novikov I., Gladyshev A., Karachinsky L., Denisov D., Voropaev K., Ionov A., Egorov A.
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| Том 53, № 13 (2019) |
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells |
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Chen X., Zhao B., Li S.
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| Том 52, № 1 (2018) |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
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Seredin P., Lenshin A., Fedyukin A., Arsentyev I., Zhabotinsky A., Nikolaev D., Leiste H., Rinke M.
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| Том 50, № 12 (2016) |
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures |
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Novikov A., Shaleev M., Yurasov D., Yunin P.
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