| Issue |
Title |
File |
| Vol 53, No 2 (2019) |
Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later) |
|
|
Karandashev S.A., Matveev B.A., Remennyi M.A.
|
| Vol 50, No 7 (2016) |
Indium nanowires at the silicon surface |
|
|
Kozhukhov A.S., Sheglov D.V., Latyshev A.V.
|
| Vol 50, No 4 (2016) |
Induced surface states of the ultrathin Ba/3C-SiC(111) interface |
|
|
Benemanskaya G.V., Dementev P.A., Kukushkin S.A., Lapushkin M.N., Senkovskiy B.V., Timoshnev S.N.
|
| Vol 53, No 1 (2019) |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
|
|
Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Lukin A.N., Mizerov A.M., Nikitina E.V., Arsentyev I.N., Leiste H., Rinke M.
|
| Vol 53, No 1 (2019) |
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |
|
|
Bannaya V.F., Nikitina E.V.
|
| Vol 51, No 6 (2017) |
Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing |
|
|
Buchin E.Y., Naumov V.V., Vasilyev S.V.
|
| Vol 53, No 1 (2019) |
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis |
|
|
Khrypunov G.S., Meriuts A.V., Shelest T.N., Khrypunov M.G.
|
| Vol 53, No 7 (2019) |
Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium |
|
|
Yurasov D.V., Baidakova N.A., Drozdov M.N., Morozova E.E., Kalinnikov M.A., Novikov A.V.
|
| Vol 53, No 2 (2019) |
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |
|
|
Sobolev N.A., Aleksandrov O.V., Sakharov V.I., Serenkov I.T., Shek E.I., Kalyadin A.E., Parshin E.O., Melesov N.S.
|
| Vol 50, No 2 (2016) |
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
|
|
Aleksandrov I.A., Zhuravlev K.S., Mansurov V.G.
|
| Vol 51, No 1 (2017) |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
|
|
Musalinov S.B., Anzulevich A.P., Bychkov I.V., Gudovskikh A.S., Shvarts M.Z.
|
| Vol 53, No 2 (2019) |
Influence of Electric Field on the Activation Energy of Local Levels in Semiconductors with Layered (GaSe) and Cubic (Ga2Se3) Structures |
|
|
Pashayev A.M., Tagiyev B.H., Tagiyev O.B., Majidova V.T., Sadikhov I.Z.
|
| Vol 52, No 3 (2018) |
Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules |
|
|
Andreeva A.V., Davidyuk N.Y., Malevskiy D.A., Panchak A.N., Sadchikov N.A., Chekalin A.V.
|
| Vol 53, No 13 (2019) |
Influence of Heat Treatments on the Properties of ZnO Nanorods Prepared by Hydrothermal Synthesis |
|
|
Hyunggun Ma .
|
| Vol 53, No 15 (2019) |
Influence of Holes Capture Efficiency on Photoluminescence Temperature Dependence of n-AlGaAs/GaAs Quantum-Well Structures |
|
|
Yaremenko N.G., Strakhov V.A., Karachevtseva M.V.
|
| Vol 53, No 10 (2019) |
Influence of Hydrogen on the Electrical Properties of Pd/InP Structures |
|
|
Shutaev V.A., Sidorov V.G., Grebenshchikova E.A., Vlasov L.K., Pivovarova A.A., Yakovlev Y.P.
|
| Vol 52, No 13 (2018) |
Influence of Hydrogen Peroxide on the Photoanodization of n-Si in the Breakdown Mode |
|
|
Li G.V., Astrova E.V., Lihachev A.I.
|
| Vol 53, No 16 (2019) |
Influence of Impurities on Polarization Properties of Lattice Vibrations |
|
|
Bairamov B.H., Toporov V.V., Bayramov F.B.
|
| Vol 52, No 8 (2018) |
Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au |
|
|
Zainabidinov S., Tursunov I.G., Khimmatkulov O.
|
| Vol 53, No 5 (2019) |
Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides |
|
|
Pankratova D.S., Novitskii A.P., Kuskov K.V., Sergienko I.A., Leybo D.V., Burkov A.T., Konstantinov P.P., Khovaylo V.V.
|
| Vol 51, No 9 (2017) |
Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon |
|
|
Sobolev N.A., Kalyadin A.E., Shek E.I., Shtel’makh K.F.
|
| Vol 53, No 8 (2019) |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
|
|
Blokhin S.A., Bobrov M.A., Blokhin A.A., Kuzmenkov A.G., Maleev N.A., Ustinov V.M., Kolodeznyi E.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinsky L.Y., Denisov D.V., Voropaev K.O., Ionov A.S., Egorov A.Y.
|
| Vol 53, No 13 (2019) |
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells |
|
|
Chen X., Zhao B., Li S.
|
| Vol 52, No 1 (2018) |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
|
|
Seredin P.V., Lenshin A.S., Fedyukin A.V., Arsentyev I.N., Zhabotinsky A.V., Nikolaev D.N., Leiste H., Rinke M.
|
| Vol 50, No 12 (2016) |
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures |
|
|
Novikov A.V., Shaleev M.V., Yurasov D.V., Yunin P.A.
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