| Issue |
Title |
File |
| Vol 50, No 1 (2016) |
Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films |
|
|
Zaynabidinov S.Z., Saidov A.S., Leiderman A.Y., Kalanov M.U., Usmonov S.N., Rustamova V.M., Boboev A.Y.
|
| Vol 50, No 2 (2016) |
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface |
|
|
Bakulin A.V., Kulkova S.E.
|
| Vol 50, No 9 (2016) |
Halogen diffusion on a Ga-stabilized ζ-GaAs(001)–(4 × 2) surface |
|
|
Bakulin A.V., Kulkova S.E.
|
| Vol 53, No 13 (2019) |
Hardness and Fracture Toughness of Solid Solutions of Mg2Si and Mg2Sn |
|
|
Hernandez G.C., Yasseri M., Ayachi S., de Boor J., Müller E.
|
| Vol 50, No 11 (2016) |
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source |
|
|
Daniltsev V.M., Demidov E.V., Drozdov M.N., Drozdov Y.N., Kraev S.A., Surovegina E.A., Shashkin V.I., Yunin P.A.
|
| Vol 52, No 16 (2018) |
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy |
|
|
Sobolev M.S., Lazarenko A.A., Mizerov A.M., Nikitina E.V., Pirogov E.V., Timoshnev S.N., Bouravleuv A.D.
|
| Vol 50, No 8 (2016) |
Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic |
|
|
Yunusov I.V., Kagadei V.A., Fazleeva A.Y., Arykov V.S.
|
| Vol 50, No 4 (2016) |
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates |
|
|
Mintairov S.A., Emelyanov V.M., Rybalchenko D.V., Salii R.A., Timoshina N.K., Shvarts M.Z., Kalyuzhnyy N.A.
|
| Vol 52, No 6 (2018) |
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers |
|
|
Babichev A.V., Kurochkin A.S., Kolodeznyi E.C., Filimonov A.V., Usikova A.A., Nevedomsky V.N., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Egorov A.Y.
|
| Vol 52, No 11 (2018) |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
|
|
Abramkin D.S., Petrushkov M.O., Putyato M.A., Semyagin B.R., Shamirzaev T.S.
|
| Vol 53, No 14 (2019) |
High Directivity in the Narrow Band of Spherical Dielectric Antennas in GHz and THz Ranges |
|
|
Storozhenko D.V., Nepomnyaschiy A.V., Deev A.V.
|
| Vol 52, No 14 (2018) |
High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |
|
|
Lebedev A.A., Bokai K.A., Gushchina E.V., Dunaevskiy M.S., Eliseyev I.A., Smirnov A.N., Lebedev S.P., Usachov D.Y., Davydov V.Y., Pezoldt J.
|
| Vol 52, No 4 (2018) |
High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches |
|
|
Bagraev N.T., Klyachkin L.E., Khromov V.S., Malyarenko A.M., Mashkov V.A., Matveev T.V., Romanov V.V., Rul’ N.I., Taranets K.B.
|
| Vol 53, No 5 (2019) |
High-Efficiency Thermoelectric Single-Photon Detector Based on Lanthanum and Cerium Hexaborides |
|
|
Kuzanyan A.S., Kuzanyan A.A., Gurin V.N., Volkov M.P., Nikoghosyan V.R.
|
| Vol 51, No 9 (2017) |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process |
|
|
Kyuregyan A.S.
|
| Vol 51, No 9 (2017) |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency |
|
|
Kyuregyan A.S.
|
| Vol 53, No 4 (2019) |
High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects |
|
|
Kyuregyan A.S.
|
| Vol 50, No 3 (2016) |
High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time |
|
|
Gusev A.I., Lyubutin S.K., Rukin S.N., Tsyranov S.N.
|
| Vol 53, No 12 (2019) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
|
|
Levin R.V., Vlasov A.S., Smirnov A.N., Pushnyi B.V.
|
| Vol 52, No 6 (2018) |
High-Sensitivity Photodetector Based on Atomically Thin MoS2 |
|
|
Lavrov S.D., Shestakova A.P., Mishina E.D., Efimenkov Y.R., Sigov A.S.
|
| Vol 51, No 9 (2017) |
High-temperature annealing of macroporous silicon in an inert-gas flow |
|
|
Astrova E.V., Preobrazhenskiy N.E., Pavlov S.I., Voronkov V.B.
|
| Vol 51, No 8 (2017) |
High-temperature diffusion of magnesium in dislocation-free silicon |
|
|
Shuman V.B., Astrov Y.A., Lodygin A.N., Portsel L.M.
|
| Vol 53, No 11 (2019) |
High-Voltage AlInGaN LED Chips |
|
|
Markov L.K., Kukushkin M.V., Pavlyuchenko A.S., Smirnova I.P., Itkinson G.V., Osipov O.V.
|
| Vol 53, No 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation |
|
|
Kyuregyan A.S.
|
| Vol 53, No 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: II. Theory |
|
|
Kyuregyan A.S.
|
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