| Issue |
Title |
File |
| Vol 53, No 15 (2019) |
Investigation of the Temperature Effect on the Output Parameters of Radioisotope Sources of Electricity Based on Double Energy Conversion of Radiative Decay |
|
|
Novikov S.G., Berintsev A.V., Alekseev A.S., Somov A.I., Svetukhin V.V.
|
| Vol 50, No 11 (2016) |
Investigation of the thermal stability of metastable GeSn epitaxial layers |
|
|
Martovitsky V.P., Sadofyev Y.G., Klekovkin A.V., Saraikin V.V., Vasil’evskii I.S.
|
| Vol 52, No 4 (2018) |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
|
|
Reddy B.P., Teja K.B., Kandpal K.
|
| Vol 51, No 1 (2017) |
Investigations of CuFeS2 semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field |
|
|
Matukhin V.L., Pogoreltsev A.I., Gavrilenko A.N., Garkavyi S.O., Shmidt E.V., Babaeva S.F., Sukhanova A.A., Terukov E.I.
|
| Vol 52, No 5 (2018) |
Ion Synthesis: Si–Ge Quantum Dots |
|
|
Gerasimenko N.N., Balakleyskiy N.S., Volokhovskiy A.D., Smirnov D.I., Zaporozhan O.A.
|
| Vol 52, No 2 (2018) |
Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure |
|
|
Tyschenko I.E., Krivyakin G.K., Volodin V.A.
|
| Vol 52, No 4 (2018) |
Is the Edge States Energy Spectrum of a 2D Topological Insulator Linear? |
|
|
Entin M.V., Mahmoodian M.M., Magarill L.I.
|
| Vol 52, No 3 (2018) |
Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals |
|
|
Morozova N.K., Miroshnikov B.N.
|
| Vol 50, No 5 (2016) |
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers |
|
|
Levinshtein M.E., Ivanov P.A., Zhang Q.J., Palmour J.W.
|
| Vol 53, No 16 (2019) |
Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers |
|
|
Bodunov E.N., Simões Gamboa A.L.
|
| Vol 52, No 5 (2018) |
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing |
|
|
Vasev A.V., Putyato M.A., Preobrazhenskii V.V., Bakarov A.K., Toropov A.I.
|
| Vol 52, No 7 (2018) |
Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1–x–ySnxVyTe Alloys upon Doping |
|
|
Skipetrov E.P., Konstantinov N.S., Skipetrova L.A., Knotko A.V., Slynko V.E.
|
| Vol 53, No 4 (2019) |
Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode |
|
|
Kyuregyan A.S.
|
| Vol 53, No 2 (2019) |
Laser Annealing of Thin ITO Films on Flexible Organic Substrates |
|
|
Parshina L.S., Novodvorsky O.A., Khramova O.D., Lotin A.A., Khomenko M.D., Shchur P.A.
|
| Vol 50, No 10 (2016) |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
|
|
Zubov F.I., Kryzhanovskaya N.V., Moiseev E.I., Polubavkina Y.S., Simchuk O.I., Kulagina M.M., Zadiranov Y.M., Troshkov S.I., Lipovskii A.A., Maximov M.V., Zhukov A.E.
|
| Vol 50, No 9 (2016) |
Laser sintering of a TiO2 nanoporous film on a flexible substrate for application in solar cells |
|
|
Malyukov S.P., Sayenko A.V., Kirichenko I.A.
|
| Vol 51, No 5 (2017) |
Laser (λ = 809 nm) power converter based on GaAs |
|
|
Khvostikov V.P., Sorokina S.V., Potapovich N.S., Khvostikova O.A., Timoshina N.K.
|
| Vol 50, No 2 (2016) |
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds |
|
|
Gromov D.V., Maltsev P.P., Polevich S.A.
|
| Vol 52, No 6 (2018) |
Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation |
|
|
Yakovlev S.A., Ankudinov A.V., Vorobyov Y.V., Voronov M.M., Kozyukhin S.A., Melekh B.T., Pevtsov A.B.
|
| Vol 53, No 9 (2019) |
Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure |
|
|
Fateev D.V., Mashinsky K.V., Moiseenko I.M., Popov V.V.
|
| Vol 53, No 2 (2019) |
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |
|
|
Gordeev N.Y., Payusov A.S., Mukhin I.S., Serin A.A., Kulagina M.M., Guseva Y.A., Shernyakov Y.M., Zadiranov Y.M., Maximov M.V.
|
| Vol 50, No 3 (2016) |
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy |
|
|
Pchelyakov O.P., Mikhlin Y.L., Parshin A.S., Kushchenkov S.A.
|
| Vol 50, No 2 (2016) |
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride |
|
|
Korolev D.S., Mikhaylov A.N., Belov A.I., Vasiliev V.K., Guseinov D.V., Okulich E.V., Shemukhin A.A., Surodin S.I., Nikolitchev D.E., Nezhdanov A.V., Pirogov A.V., Pavlov D.A., Tetelbaum D.I.
|
| Vol 51, No 1 (2017) |
Lifetime of excess electrons in Cu–Zn–Sn–Se powders |
|
|
Novikov G.F., Gapanovich M.V., Gremenok V.F., Bocharov K.V., Tsai W.-., Jeng M., Chang L.
|
| Vol 50, No 5 (2016) |
Lifetime of excitons localized in Si nanocrystals in amorphous silicon |
|
|
Gusev O.B., Belolipetskiy A.V., Yassievich I.N., Kukin A.V., Terukova E.E., Terukov E.I.
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