| Edição |
Título |
Arquivo |
| Volume 53, Nº 15 (2019) |
Investigation of the Temperature Effect on the Output Parameters of Radioisotope Sources of Electricity Based on Double Energy Conversion of Radiative Decay |
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Novikov S., Berintsev A., Alekseev A., Somov A., Svetukhin V.
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| Volume 50, Nº 11 (2016) |
Investigation of the thermal stability of metastable GeSn epitaxial layers |
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Martovitsky V., Sadofyev Y., Klekovkin A., Saraikin V., Vasil’evskii I.
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| Volume 52, Nº 4 (2018) |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
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Reddy B., Teja K., Kandpal K.
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| Volume 51, Nº 1 (2017) |
Investigations of CuFeS2 semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field |
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Matukhin V., Pogoreltsev A., Gavrilenko A., Garkavyi S., Shmidt E., Babaeva S., Sukhanova A., Terukov E.
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| Volume 52, Nº 5 (2018) |
Ion Synthesis: Si–Ge Quantum Dots |
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Gerasimenko N., Balakleyskiy N., Volokhovskiy A., Smirnov D., Zaporozhan O.
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| Volume 52, Nº 2 (2018) |
Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure |
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Tyschenko I., Krivyakin G., Volodin V.
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| Volume 52, Nº 4 (2018) |
Is the Edge States Energy Spectrum of a 2D Topological Insulator Linear? |
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Entin M., Mahmoodian M., Magarill L.
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| Volume 52, Nº 3 (2018) |
Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals |
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Morozova N., Miroshnikov B.
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| Volume 50, Nº 5 (2016) |
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers |
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Levinshtein M., Ivanov P., Zhang Q., Palmour J.
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| Volume 53, Nº 16 (2019) |
Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers |
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Bodunov E., Simões Gamboa A.
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| Volume 52, Nº 5 (2018) |
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing |
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Vasev A., Putyato M., Preobrazhenskii V., Bakarov A., Toropov A.
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| Volume 52, Nº 7 (2018) |
Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1–x–ySnxVyTe Alloys upon Doping |
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Skipetrov E., Konstantinov N., Skipetrova L., Knotko A., Slynko V.
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| Volume 53, Nº 4 (2019) |
Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode |
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Kyuregyan A.
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| Volume 53, Nº 2 (2019) |
Laser Annealing of Thin ITO Films on Flexible Organic Substrates |
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Parshina L., Novodvorsky O., Khramova O., Lotin A., Khomenko M., Shchur P.
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| Volume 50, Nº 10 (2016) |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
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Zubov F., Kryzhanovskaya N., Moiseev E., Polubavkina Y., Simchuk O., Kulagina M., Zadiranov Y., Troshkov S., Lipovskii A., Maximov M., Zhukov A.
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| Volume 50, Nº 9 (2016) |
Laser sintering of a TiO2 nanoporous film on a flexible substrate for application in solar cells |
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Malyukov S., Sayenko A., Kirichenko I.
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| Volume 51, Nº 5 (2017) |
Laser (λ = 809 nm) power converter based on GaAs |
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Khvostikov V., Sorokina S., Potapovich N., Khvostikova O., Timoshina N.
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| Volume 50, Nº 2 (2016) |
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds |
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Gromov D., Maltsev P., Polevich S.
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| Volume 52, Nº 6 (2018) |
Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation |
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Yakovlev S., Ankudinov A., Vorobyov Y., Voronov M., Kozyukhin S., Melekh B., Pevtsov A.
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| Volume 53, Nº 9 (2019) |
Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure |
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Fateev D., Mashinsky K., Moiseenko I., Popov V.
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| Volume 53, Nº 2 (2019) |
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |
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Gordeev N., Payusov A., Mukhin I., Serin A., Kulagina M., Guseva Y., Shernyakov Y., Zadiranov Y., Maximov M.
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| Volume 50, Nº 3 (2016) |
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy |
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Pchelyakov O., Mikhlin Y., Parshin A., Kushchenkov S.
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| Volume 50, Nº 2 (2016) |
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride |
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Korolev D., Mikhaylov A., Belov A., Vasiliev V., Guseinov D., Okulich E., Shemukhin A., Surodin S., Nikolitchev D., Nezhdanov A., Pirogov A., Pavlov D., Tetelbaum D.
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| Volume 51, Nº 1 (2017) |
Lifetime of excess electrons in Cu–Zn–Sn–Se powders |
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Novikov G., Gapanovich M., Gremenok V., Bocharov K., Tsai W., Jeng M., Chang L.
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| Volume 50, Nº 5 (2016) |
Lifetime of excitons localized in Si nanocrystals in amorphous silicon |
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Gusev O., Belolipetskiy A., Yassievich I., Kukin A., Terukova E., Terukov E.
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