| 期 |
标题 |
文件 |
| 卷 53, 编号 6 (2019) |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
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Romanov V., Belykh I., Ivanov E., Alekseev P., Il’inskaya N., Yakovlev Y.
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| 卷 50, 编号 2 (2016) |
Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic Al2O3 matrices |
|
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Valeev R., Petukhov D., Chukavin A., Beltiukov A.
|
| 卷 53, 编号 14 (2019) |
Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes |
|
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Mitin D., Raudik S., Mozharov A., Bolshakov A., Fedorov V., Nepokh V., Rajanna P., Nasibulin A., Mukhin I.
|
| 卷 50, 编号 7 (2016) |
Local emission spectroscopy of surface micrograins in AIIIBV semiconductors |
|
|
Zhukov N., Gluhovskoy E., Mosiyash D.
|
| 卷 51, 编号 7 (2017) |
Local thermoelectric effects in wide-gap semiconductors |
|
|
Ordin S., Zhilyaev Y., Zelenin V., Panteleev V.
|
| 卷 50, 编号 5 (2016) |
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals |
|
|
Sobolev V., Perevoshchikov D.
|
| 卷 52, 编号 4 (2018) |
Localization-Delocalization Transition in Disordered One-Dimensional Exciton-Polariton System |
|
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Larionov A., Brichkin A., Höfling S., Kulakovskii V.
|
| 卷 53, 编号 10 (2019) |
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics |
|
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Yurasov D., Baidakova N., Verbus V., Gusev N., Mashin A., Morozova E., Nezhdanov A., Novikov A., Skorohodov E., Shengurov D., Yablonskiy A.
|
| 卷 52, 编号 5 (2018) |
Long-Lived Magnetoexcitons and Two-Dimensional Magnetofermionic Condensate in GaAs/AlGaAs Heterostructure |
|
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Kulik L., Gorbunov A., Zhuravlev A., Timofeev V., Kukushkin I.
|
| 卷 51, 编号 11 (2017) |
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition |
|
|
Akimov A., Klimov A., Paschin N., Yaroshevich A., Savchenko M., Epov V., Fedosenko E.
|
| 卷 50, 编号 12 (2016) |
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells |
|
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Rumyantsev V., Fadeev M., Morozov S., Dubinov A., Kudryavtsev K., Kadykov A., Tuzov I., Dvoretskii S., Mikhailov N., Gavrilenko V., Teppe F.
|
| 卷 52, 编号 14 (2018) |
Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks |
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Lebedev D., Bykov V., Shelaev A., Smirnov V., Buriak P., Romanova A., Juska G., Gocalinska A., Pelucchi E., Guseva Y., Troshkov S., Kulagina M., Vlasov A., Mintairov A.
|
| 卷 52, 编号 9 (2018) |
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells |
|
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Dubinov A., Aleshkin V., Morozov S.
|
| 卷 52, 编号 9 (2018) |
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System |
|
|
Castro R., Grabko G., Kononov A.
|
| 卷 53, 编号 7 (2019) |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
|
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Korolkov O., Kozlovski V., Lebedev A., Sleptsuk N., Toompuu J., Rang T.
|
| 卷 50, 编号 9 (2016) |
Low-temperature conductivity of gadolinium sulfides |
|
|
Mustafaeva S., Asadov S.
|
| 卷 51, 编号 11 (2017) |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
|
|
Okhapkin A., Korolyov S., Yunin P., Drozdov M., Kraev S., Khrykin O., Shashkin V.
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| 卷 53, 编号 2 (2019) |
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers |
|
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Erofeev E., Fedin I., Fedina V., Fazleev A.
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| 卷 52, 编号 10 (2018) |
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering |
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Svitsiankou I., Pavlovskii V., Lutsenko E., Yablonskii G., Shiripov V., Khokhlov E., Mudryi A., Zhivulko V., Borodavchenko O., Yakushev M.
|
| 卷 52, 编号 5 (2018) |
Luminescence Decay of Colloidal Quantum Dots and Stretched Exponential (Kohlrausch) Relaxation Function |
|
|
Bodunov E., Simões Gamboa A.
|
| 卷 53, 编号 14 (2019) |
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells |
|
|
Arteev D., Sakharov A., Lundin W., Zavarin E., Zakheim D., Tsatsulnikov A.
|
| 卷 51, 编号 11 (2017) |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
|
|
Nikiforov V., Abramkin D., Shamirzaev T.
|
| 卷 52, 编号 4 (2018) |
Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field |
|
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Shtrom I., Agekyan V., Serov A., Filosofov N., Akhmadullin R., Krizhkov D., Karczewski G.
|
| 卷 53, 编号 3 (2019) |
Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K |
|
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Makhniy V., Vakhnyak N., Kinzerska O., Pyryatynsky Y.
|
| 卷 52, 编号 2 (2018) |
Luminescence Properties of CdxZn1 – xO Thin Films |
|
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Lotin A., Novodvorsky O., Parshina L., Khramova O., Cherebylo E., Mikhalevsky V.
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