Issue |
Title |
File |
Vol 53, No 6 (2019) |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
|
Romanov V.V., Belykh I.A., Ivanov E.V., Alekseev P.A., Il’inskaya N.D., Yakovlev Y.P.
|
Vol 50, No 2 (2016) |
Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic Al2O3 matrices |
|
Valeev R.G., Petukhov D.I., Chukavin A.I., Beltiukov A.N.
|
Vol 53, No 14 (2019) |
Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes |
|
Mitin D.M., Raudik S.A., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Nepokh V.V., Rajanna P.M., Nasibulin A.G., Mukhin I.S.
|
Vol 50, No 7 (2016) |
Local emission spectroscopy of surface micrograins in AIIIBV semiconductors |
|
Zhukov N.D., Gluhovskoy E.G., Mosiyash D.S.
|
Vol 51, No 7 (2017) |
Local thermoelectric effects in wide-gap semiconductors |
|
Ordin S.V., Zhilyaev Y.V., Zelenin V.V., Panteleev V.N.
|
Vol 50, No 5 (2016) |
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals |
|
Sobolev V.V., Perevoshchikov D.A.
|
Vol 52, No 4 (2018) |
Localization-Delocalization Transition in Disordered One-Dimensional Exciton-Polariton System |
|
Larionov A.V., Brichkin A.S., Höfling S., Kulakovskii V.D.
|
Vol 53, No 10 (2019) |
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics |
|
Yurasov D.V., Baidakova N.A., Verbus V.A., Gusev N.S., Mashin A.I., Morozova E.E., Nezhdanov A.V., Novikov A.V., Skorohodov E.V., Shengurov D.V., Yablonskiy A.N.
|
Vol 52, No 5 (2018) |
Long-Lived Magnetoexcitons and Two-Dimensional Magnetofermionic Condensate in GaAs/AlGaAs Heterostructure |
|
Kulik L.V., Gorbunov A.V., Zhuravlev A.S., Timofeev V.B., Kukushkin I.V.
|
Vol 51, No 11 (2017) |
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition |
|
Akimov A.N., Klimov A.E., Paschin N.S., Yaroshevich A.S., Savchenko M.L., Epov V.S., Fedosenko E.V.
|
Vol 50, No 12 (2016) |
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells |
|
Rumyantsev V.V., Fadeev M.A., Morozov S.V., Dubinov A.A., Kudryavtsev K.E., Kadykov A.M., Tuzov I.V., Dvoretskii S.A., Mikhailov N.N., Gavrilenko V.I., Teppe F.
|
Vol 52, No 14 (2018) |
Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks |
|
Lebedev D.V., Bykov V.A., Shelaev A.V., Smirnov V.I., Buriak P.A., Romanova A.Y., Juska G., Gocalinska A., Pelucchi E., Guseva Y.A., Troshkov S.I., Kulagina M.M., Vlasov A.S., Mintairov A.M.
|
Vol 52, No 9 (2018) |
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells |
|
Dubinov A.A., Aleshkin V.Y., Morozov S.V.
|
Vol 52, No 9 (2018) |
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System |
|
Castro R.A., Grabko G.I., Kononov A.A.
|
Vol 53, No 7 (2019) |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
|
Korolkov O.M., Kozlovski V.V., Lebedev A.A., Sleptsuk N., Toompuu J., Rang T.
|
Vol 50, No 9 (2016) |
Low-temperature conductivity of gadolinium sulfides |
|
Mustafaeva S.N., Asadov S.M.
|
Vol 51, No 11 (2017) |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
|
Okhapkin A.I., Korolyov S.A., Yunin P.A., Drozdov M.N., Kraev S.A., Khrykin O.I., Shashkin V.I.
|
Vol 53, No 2 (2019) |
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers |
|
Erofeev E.V., Fedin I.V., Fedina V.V., Fazleev A.P.
|
Vol 52, No 10 (2018) |
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering |
|
Svitsiankou I.E., Pavlovskii V.N., Lutsenko E.V., Yablonskii G.P., Shiripov V.Y., Khokhlov E.A., Mudryi A.V., Zhivulko V.D., Borodavchenko O.M., Yakushev M.V.
|
Vol 52, No 5 (2018) |
Luminescence Decay of Colloidal Quantum Dots and Stretched Exponential (Kohlrausch) Relaxation Function |
|
Bodunov E.N., Simões Gamboa A.L.
|
Vol 53, No 14 (2019) |
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells |
|
Arteev D.S., Sakharov A.V., Lundin W.V., Zavarin E.E., Zakheim D.A., Tsatsulnikov A.F.
|
Vol 51, No 11 (2017) |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
|
Nikiforov V.E., Abramkin D.S., Shamirzaev T.S.
|
Vol 52, No 4 (2018) |
Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field |
|
Shtrom I.V., Agekyan V.F., Serov A.Y., Filosofov N.G., Akhmadullin R.R., Krizhkov D.E., Karczewski G.
|
Vol 53, No 3 (2019) |
Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K |
|
Makhniy V.P., Vakhnyak N.D., Kinzerska O.V., Pyryatynsky Y.P.
|
Vol 52, No 2 (2018) |
Luminescence Properties of CdxZn1 – xO Thin Films |
|
Lotin A.A., Novodvorsky O.A., Parshina L.S., Khramova O.D., Cherebylo E.A., Mikhalevsky V.A.
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