| Issue |
Title |
File |
| Vol 53, No 8 (2019) |
Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon |
|
|
Balakshin Y.V., Kozhemiako A.V., Petrovic S., Erich M., Shemukhin A.A., Chernysh V.S.
|
| Vol 51, No 2 (2017) |
Influence of the doping type and level on the morphology of porous Si formed by galvanic etching |
|
|
Pyatilova O.V., Gavrilov S.A., Shilyaeva Y.I., Pavlov A.A., Shaman Y.P., Dudin A.A.
|
| Vol 53, No 15 (2019) |
Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC |
|
|
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Gudkov V.A., Garmash V.I.
|
| Vol 52, No 16 (2018) |
Influence of the Pore Structure on the Electron Barrier Height of Metal-Ceramic Nanomaterials Based on Gold-Anodic Aluminum Oxide |
|
|
Ushakov N.M., Vasil’kov M.Y., Shaturnuy V.R.
|
| Vol 51, No 6 (2017) |
Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor |
|
|
Mekhtiyeva S.I., Atayeva S.U., Isayev A.I., Zeynalov V.Z.
|
| Vol 53, No 5 (2019) |
Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi1.9Gd0.1Te3 Compound |
|
|
Yapryntsev M.N., Vasiliev A.E., Ivanov O.N.
|
| Vol 53, No 4 (2019) |
Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures |
|
|
Kalygina V.M., Lygdenova T.Z., Petrova Y.S., Chernikov E.V.
|
| Vol 50, No 3 (2016) |
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon |
|
|
Chubenko E.B., Redko S.V., Sherstnyov A.I., Petrovich V.A., Kotov D.A., Bondarenko V.P.
|
| Vol 52, No 10 (2018) |
Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films |
|
|
Ryaguzov A.P., Nemkayeva R.R., Guseinov N.R.
|
| Vol 52, No 3 (2018) |
Influence of the Thermal Conditions of Fabrication and Treatment on the Optical Properties of In2O3 Films |
|
|
Tikhii A.A., Nikolaenko Y.M., Zhikhareva Y.I., Kornievets A.S., Zhikharev I.V.
|
| Vol 51, No 8 (2017) |
Influence of traps in silicon dioxide on the breakdown of MOS structures |
|
|
Aleksandrov O.V.
|
| Vol 53, No 6 (2019) |
Influence of V Doping on the Thermoelectric Properties of Fe2Ti1 –xVxSn Heusler Alloys |
|
|
Taranova A.I., Novitskii A.P., Voronin A.I., Taskaev S.V., Khovaylo V.V.
|
| Vol 52, No 1 (2018) |
Infrared Reflection Spectra of Pb1–xSnxSe (x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures |
|
|
Novikova N.N., Yakovlev V.A., Kucherenko I.V., Vinogradov V.S., Aleschenko Y.A., Muratov A.V., Karczewski G., Chusnutdinow S.
|
| Vol 53, No 12 (2019) |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
|
|
Nadtochiy A.M., Shchukin V.A., Cherkashin N., Denneulin T., Zhukov A.E., Maximov M.V., Gordeev N.Y., Payusov A.S., Kulagina M.M., Shernyakov Y.M., Ledentsov N.N.
|
| Vol 51, No 1 (2017) |
InGaN/GaN light-emitting diode microwires of submillimeter length |
|
|
Lundin W.V., Rodin S.N., Sakharov A.V., Lundina E.Y., Usov S.O., Zadiranov Y.M., Troshkov S.I., Tsatsulnikov A.F.
|
| Vol 52, No 16 (2018) |
InGaN/GaN QDs Nanorods: Processing and Properties |
|
|
Kotlyar K.P., Soshnikov I.P., Morozov I.A., Berezovskaya T.N., Kryzhanovskaya N.V., Kudryashov D.A., Lysak V.V.
|
| Vol 51, No 11 (2017) |
Inhomogeneous dopant distribution in III–V nanowires |
|
|
Leshchenko E.D., Dubrovskii V.G.
|
| Vol 53, No 4 (2019) |
Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink |
|
|
Gorbatyuk A.V., Ivanov B.V.
|
| Vol 53, No 16 (2019) |
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation |
|
|
Spirina A.A., Neizvestny I.G., Shwartz N.L.
|
| Vol 51, No 5 (2017) |
Injection-induced terahertz electroluminescence from silicon p–n structures |
|
|
Zakhar’in A.O., Vasilyev Y.B., Sobolev N.A., Zabrodskii V.V., Egorov S.V., Andrianov A.V.
|
| Vol 51, No 8 (2017) |
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates |
|
|
Sokura L.A., Parkhomenko Y.A., Moiseev K.D., Nevedomsky V.N., Bert N.A.
|
| Vol 53, No 9 (2019) |
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique |
|
|
Dorokhin M.V., Demina P.B., Erofeeva I.V., Zdoroveyshchev A.V., Kuznetsov Y.M., Boldin M.S., Popov A.A., Lantsev E.A., Boryakov A.V.
|
| Vol 50, No 6 (2016) |
Inter atomic force constants of binary and ternary tetrahedral semiconductors |
|
|
Pal S., Tiwari R.K., Gupta D.C., Saraswat V.K., Verma A.S.
|
| Vol 53, No 10 (2019) |
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode |
|
|
Morozov K.M., Belonovskii A.V., Ivanov K.A., Girshova E.I., Kaliteevski M.A.
|
| Vol 50, No 13 (2016) |
Interaction of electromagnetic radiation with magnetically functionalized CNT nanocomposite in the subterahertz frequency range |
|
|
Atdaev A., Danilyuk A.L., Labunov V.A., Prischepa S.L., Pavlov A.A., Basaev A.S., Shaman Y.P.
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