| 期 |
标题 |
文件 |
| 卷 51, 编号 6 (2017) |
Fe-based semiconducting Heusler alloys |
|
|
Khovaylo V., Voronin A., Zueva V., Seredina M., Chatterdjee R.
|
| 卷 51, 编号 10 (2017) |
(FeIn2S4)x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap |
|
|
Bodnar I., Barugu T., Kasyuk Y., Fedotova Y.
|
| 卷 53, 编号 16 (2019) |
Femtosecond Laser-Induced Periodical Nanomodification of Surface Composition |
|
|
Ionin A., Kudryashov S., Makarov S.
|
| 卷 52, 编号 16 (2018) |
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy |
|
|
Mitrofanov M., Levitskii I., Voznyuk G., Tatarinov E., Rodin S., Lundin W., Evtikhiev V., Mizerov M.
|
| 卷 52, 编号 15 (2018) |
Field Characteristics of Spin-Torque Diode Sensitivity in the Presence of a Bias Current |
|
|
Popkov A., Kulagin N., Demin G., Zvezdin K.
|
| 卷 50, 编号 7 (2016) |
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC |
|
|
Ivanov P., Potapov A., Samsonova T., Grekhov I.
|
| 卷 51, 编号 2 (2017) |
Field diffusion in disordered organic materials under conditions of occupied deep states |
|
|
Nikitenko V., Kudrov A.
|
| 卷 52, 编号 12 (2018) |
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current |
|
|
Akimov A., Klimov A., Epov V.
|
| 卷 52, 编号 3 (2018) |
Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films |
|
|
Smirnov V., Mokrushin A., Denisov N., Dobrovolskii Y.
|
| 卷 50, 编号 2 (2016) |
Field-effect transistor with 2D carrier systems in the gate and channel |
|
|
Popov V.
|
| 卷 53, 编号 15 (2019) |
Field-Emission Cathodes Based on Microchannel Plates |
|
|
Khamdokhov Z., Margushev Z., Khamdokhov E., Teshev R., Bavizhev M.
|
| 卷 50, 编号 10 (2016) |
First-principles calculations of the electronic and structural properties of GaSb |
|
|
Castaño-González E., Seña N., Mendoza-Estrada V., González-Hernández R., Dussan A., Mesa F.
|
| 卷 53, 编号 12 (2019) |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
|
|
Singh A., Chandra D., Kattayat S., Kumar S., Alvi P., Rathi A.
|
| 卷 53, 编号 13 (2019) |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
|
|
Singh A., Chandra D., Kattayat S., Kumar S., Alvi P., Rathi A.
|
| 卷 52, 编号 4 (2018) |
Floquet Engineering of Gapped 2D Materials |
|
|
Kibis O., Dini K., Iorsh I., Shelykh I.
|
| 卷 52, 编号 6 (2018) |
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations |
|
|
Volodin V., Sachkov V., Sinyukov M.
|
| 卷 52, 编号 11 (2018) |
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics |
|
|
Novikov A., Yurasov D., Morozova E., Skorohodov E., Verbus V., Yablonskiy A., Baidakova N., Gusev N., Kudryavtsev K., Nezhdanov A., Mashin A.
|
| 卷 52, 编号 16 (2018) |
Formation and Properties of New Types of Metal–Dielectric Nanostructures for Creating Optical Metamaterials |
|
|
Kazak N., Agabekov V., Kurilkina S., Belyi V.
|
| 卷 51, 编号 1 (2017) |
Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures |
|
|
Ivlev K., Roslikov V., Bolotov V., Knyazev E., Ponomareva I., Kan V., Davletkildeev N.
|
| 卷 50, 编号 5 (2016) |
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates |
|
|
Kozlovskiy V., Krivobok V., Kuznetsov P., Nikolaev S., Onistchenko E., Pruchkina A., Temiryazev A.
|
| 卷 51, 编号 10 (2017) |
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region |
|
|
Krivyakin G., Volodin V., Shklyaev A., Mortet V., More-Chevalier J., Ashcheulov P., Remes Z., Stuchliková T., Stuchlik J.
|
| 卷 53, 编号 11 (2019) |
Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %) |
|
|
Undalov Y., Terukov E., Trapeznikova I.
|
| 卷 51, 编号 5 (2017) |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
|
|
Karlina L., Vlasov A., Ber B., Kazantsev D., Timoshina N., Kulagina M., Smirnov A.
|
| 卷 52, 编号 12 (2018) |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
|
|
Mansurov V., Galitsyn Y., Malin T., Teys S., Fedosenko E., Kozhukhov A., Zhuravlev K., Cora I., Pécz B.
|
| 卷 52, 编号 3 (2018) |
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |
|
|
Esin M., Nikiforov A., Timofeev V., Tuktamyshev A., Mashanov V., Loshkarev I., Deryabin A., Pchelyakov O.
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