| Issue |
Title |
File |
| Vol 51, No 6 (2017) |
Fe-based semiconducting Heusler alloys |
|
|
Khovaylo V.V., Voronin A.I., Zueva V.Y., Seredina M.A., Chatterdjee R.
|
| Vol 51, No 10 (2017) |
(FeIn2S4)x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap |
|
|
Bodnar I.V., Barugu T.G., Kasyuk Y.V., Fedotova Y.A.
|
| Vol 53, No 16 (2019) |
Femtosecond Laser-Induced Periodical Nanomodification of Surface Composition |
|
|
Ionin A.A., Kudryashov S.I., Makarov S.V.
|
| Vol 52, No 16 (2018) |
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy |
|
|
Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Tatarinov E.E., Rodin S.N., Lundin W.V., Evtikhiev V.P., Mizerov M.
|
| Vol 52, No 15 (2018) |
Field Characteristics of Spin-Torque Diode Sensitivity in the Presence of a Bias Current |
|
|
Popkov A.F., Kulagin N.E., Demin G.D., Zvezdin K.A.
|
| Vol 50, No 7 (2016) |
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC |
|
|
Ivanov P.A., Potapov A.S., Samsonova T.P., Grekhov I.V.
|
| Vol 51, No 2 (2017) |
Field diffusion in disordered organic materials under conditions of occupied deep states |
|
|
Nikitenko V.R., Kudrov A.Y.
|
| Vol 52, No 12 (2018) |
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current |
|
|
Akimov A.N., Klimov A.E., Epov V.S.
|
| Vol 52, No 3 (2018) |
Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films |
|
|
Smirnov V.A., Mokrushin A.D., Denisov N.N., Dobrovolskii Y.A.
|
| Vol 50, No 2 (2016) |
Field-effect transistor with 2D carrier systems in the gate and channel |
|
|
Popov V.G.
|
| Vol 53, No 15 (2019) |
Field-Emission Cathodes Based on Microchannel Plates |
|
|
Khamdokhov Z.M., Margushev Z.C., Khamdokhov E.Z., Teshev R.S., Bavizhev M.D.
|
| Vol 50, No 10 (2016) |
First-principles calculations of the electronic and structural properties of GaSb |
|
|
Castaño-González E., Seña N., Mendoza-Estrada V., González-Hernández R., Dussan A., Mesa F.
|
| Vol 53, No 12 (2019) |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
|
|
Singh A.K., Chandra D., Kattayat S., Kumar S., Alvi P.A., Rathi A.
|
| Vol 53, No 13 (2019) |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
|
|
Singh A.K., Chandra D., Kattayat S., Kumar S., Alvi P.A., Rathi A.
|
| Vol 52, No 4 (2018) |
Floquet Engineering of Gapped 2D Materials |
|
|
Kibis O.V., Dini K., Iorsh I.V., Shelykh I.A.
|
| Vol 52, No 6 (2018) |
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations |
|
|
Volodin V.A., Sachkov V.A., Sinyukov M.P.
|
| Vol 52, No 11 (2018) |
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics |
|
|
Novikov A.V., Yurasov D.V., Morozova E.E., Skorohodov E.V., Verbus V.A., Yablonskiy A.N., Baidakova N.A., Gusev N.S., Kudryavtsev K.E., Nezhdanov A.V., Mashin A.I.
|
| Vol 52, No 16 (2018) |
Formation and Properties of New Types of Metal–Dielectric Nanostructures for Creating Optical Metamaterials |
|
|
Kazak N.S., Agabekov V.E., Kurilkina S.N., Belyi V.N.
|
| Vol 51, No 1 (2017) |
Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures |
|
|
Ivlev K.E., Roslikov V.E., Bolotov V.V., Knyazev E.V., Ponomareva I.V., Kan V.E., Davletkildeev N.A.
|
| Vol 50, No 5 (2016) |
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates |
|
|
Kozlovskiy V.I., Krivobok V.S., Kuznetsov P.I., Nikolaev S.N., Onistchenko E.E., Pruchkina A.A., Temiryazev A.G.
|
| Vol 51, No 10 (2017) |
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region |
|
|
Krivyakin G.K., Volodin V.A., Shklyaev A.A., Mortet V., More-Chevalier J., Ashcheulov P., Remes Z., Stuchliková T.H., Stuchlik J.
|
| Vol 53, No 11 (2019) |
Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %) |
|
|
Undalov Y.K., Terukov E.I., Trapeznikova I.N.
|
| Vol 51, No 5 (2017) |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
|
|
Karlina L.B., Vlasov A.S., Ber B.Y., Kazantsev D.Y., Timoshina N.K., Kulagina M.M., Smirnov A.B.
|
| Vol 52, No 12 (2018) |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
|
|
Mansurov V.G., Galitsyn Y.G., Malin T.V., Teys S.A., Fedosenko E.V., Kozhukhov A.S., Zhuravlev K.S., Cora I., Pécz B.
|
| Vol 52, No 3 (2018) |
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |
|
|
Esin M.Y., Nikiforov A.I., Timofeev V.A., Tuktamyshev A.R., Mashanov V.I., Loshkarev I.D., Deryabin A.S., Pchelyakov O.P.
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