| Issue |
Title |
File |
| Vol 51, No 9 (2017) |
High-voltage MIS-gated GaN transistors |
|
|
Erofeev E.V., Fedin I.V., Fedina V.V., Stepanenko M.V., Yuryeva A.V.
|
| Vol 50, No 3 (2016) |
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base |
|
|
Levinshtein M.E., Mnatsakanov T.T., Yurkov S.N., Tandoev A.G., Ryu S., Palmour J.W.
|
| Vol 51, No 9 (2017) |
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |
|
|
Bochkareva N.I., Voronenkov V.V., Gorbunov R.I., Virko M.V., Kogotkov V.S., Leonidov A.A., Vorontsov-Velyaminov P.N., Sheremet I.A., Shreter Y.G.
|
| Vol 52, No 14 (2018) |
Hot Excitons Contribution into the Photoluminescence of Self-Assembled Quantum Dots in CdSe/ZnSe Heterostructures under Different Excitation Conditions |
|
|
Budkin G.V., Reznitsky A.N.
|
| Vol 50, No 11 (2016) |
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon |
|
|
Cirlin G.E., Shtrom I.V., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Bouravleuv A.D., Soshnikov I.P.
|
| Vol 52, No 4 (2018) |
Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources |
|
|
Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Samsonenko Y.B., Kukushkin S.A., Kasama T., Akopian N., Leonardo L.
|
| Vol 53, No 5 (2019) |
Hydrogen Desorption from Pentagraphane |
|
|
Openov L.A., Podlivaev A.I.
|
| Vol 53, No 9 (2019) |
Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors |
|
|
Ivchenko E.L., Kalevich V.K., Kunold A., Balocchi A., Marie X., Amand T.
|
| Vol 50, No 4 (2016) |
Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures |
|
|
Musaev A.M.
|
| Vol 53, No 10 (2019) |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
|
|
Lebedev A.A., Kozlovski V.V., Ivanov P.A., Levinshtein M.E., Zubov A.V.
|
| Vol 52, No 13 (2018) |
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |
|
|
Tyaginov S.E., Linten D., Vexler M.I., Hellings G., Grill A., Chasin A., Jech M., Kaczer B., Makarov A.A., Grasser T.
|
| Vol 53, No 10 (2019) |
Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles |
|
|
Sobolev M.M., Yavsin D.A., Gurevich S.A.
|
| Vol 52, No 10 (2018) |
Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier |
|
|
Torkhov N.A.
|
| Vol 52, No 4 (2018) |
Impact of UV Pulsed Laser Radiation and of the Electron Flow on Dielectric States of Polymer Composite Nanomaterial Based on LDPE Matrix |
|
|
Ushakov N.M., Kosobudskii I.D.
|
| Vol 51, No 3 (2017) |
Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength |
|
|
Bannaya V.F.
|
| Vol 50, No 13 (2016) |
Improving the functional characteristics of gallium nitride during vapor phase epitaxy |
|
|
Vigdorovich E.N.
|
| Vol 51, No 8 (2017) |
Impurity levels in Hg3In2Te6 crystals |
|
|
Chupyra S.M., Grushka O.G., Bilichuk S.V.
|
| Vol 51, No 4 (2017) |
In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers |
|
|
Guseynov R.R., Tanriverdiyev V.A., Kipshidze G., Aliyeva Y.N., Aliguliyeva K.V., Abdullayev N.A., Mamedov N.T.
|
| Vol 53, No 12 (2019) |
InxAl1 –xN Solid Solutions: Composition Stability Issues |
|
|
Brudnyi V.N., Vilisova M.D., Velikovskiy L.E.
|
| Vol 52, No 7 (2018) |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
|
|
Salii R.A., Kosarev I.S., Mintairov S.A., Nadtochiy A.M., Shvarts M.Z., Kalyuzhnyy N.A.
|
| Vol 51, No 5 (2017) |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
|
|
Mintairov S.A., Kalyuzhnyy N.A., Maximov M.V., Nadtochiy A.M., Nevedomskiy V.N., Zhukov A.E.
|
| Vol 51, No 7 (2017) |
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers |
|
|
Sokolova Z.N., Veselov D.A., Pikhtin N.A., Tarasov I.S., Asryan L.V.
|
| Vol 53, No 14 (2019) |
Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity |
|
|
Sergaeva O.N., Yaroshenko V.V., Volkov I.A., Zuev D.A., Savelev R.S.
|
| Vol 51, No 2 (2017) |
Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment |
|
|
Erofeev E.V., Fedin I.V., Kutkov I.V., Yuryev Y.N.
|
| Vol 52, No 14 (2018) |
Increasing Spin-Orbital Coupling at Relativistic Exchange Interaction of Electron-Hole Pairs in Graphene |
|
|
Grushevskaya H.V., Krylov G.G.
|
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