| Issue |
Title |
File |
| Vol 52, No 13 (2018) |
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |
|
|
Emtsev V.V., Abrosimov N.V., Kozlovski V.V., Poloskin D.S., Oganesyan G.A.
|
| Vol 52, No 9 (2018) |
Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide |
|
|
Rut’kov E.V., Gall N.R.
|
| Vol 51, No 10 (2017) |
Interdiffusion and phase formation in the Fe–TiO2 thin-film system |
|
|
Afonin N.N., Logacheva V.A.
|
| Vol 52, No 2 (2018) |
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells |
|
|
Pavlov N.V., Zegrya G.G., Zegrya A.G., Bugrov V.E.
|
| Vol 52, No 13 (2018) |
Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride |
|
|
Ushakov V.V., Aminev D.F., Krivobok V.S.
|
| Vol 52, No 15 (2018) |
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures |
|
|
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Garmash V.I.
|
| Vol 53, No 4 (2019) |
Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy |
|
|
Aslanyan A.E., Avakyants L.P., Bokov P.Y., Chervyakov A.V.
|
| Vol 53, No 7 (2019) |
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy |
|
|
Seredin P.V., Lenshin A.S., Zolotukhin D.S., Goloshchapov D.L., Mizerov A.M., Arsentyev I.N., Beltyukov A.N.
|
| Vol 53, No 1 (2019) |
Investigation into the Memristor Effect in Nanocrystalline ZnO Films |
|
|
Smirnov V.A., Tominov R.V., Avilov V.I., Alyabieva N.I., Vakulov Z.E., Zamburg E.G., Khakhulin D.A., Ageev O.A.
|
| Vol 53, No 3 (2019) |
Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures |
|
|
Kabalnov Y.A., Trufanov A.N., Obolensky S.V.
|
| Vol 52, No 1 (2018) |
Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field |
|
|
Chernenko A.V., Brichkin A.S., Novikov S.I., Schneider C., Hoefling S.
|
| Vol 53, No 11 (2019) |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
|
|
Gagis G.S., Levin R.V., Marichev A.E., Pushnyi B.V., Scheglov M.P., Ber B.Y., Kazantsev D.Y., Kudriavtsev Y.A., Vlasov A.S., Popova T.B., Chistyakov D.V., Kuchinskii V.I., Vasil’ev V.I.
|
| Vol 52, No 16 (2018) |
Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications |
|
|
Ajayan J., Ravichandran T., Mohankumar P., Prajoon P., Pravin J.C., Nirmal D.
|
| Vol 51, No 12 (2017) |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
|
|
Rumyantsev V.V., Kadykov A.M., Fadeev M.A., Dubinov A.A., Utochkin V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
|
| Vol 52, No 16 (2018) |
Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction |
|
|
Yajie Li ., Wang P., Meng F., Yu H., Zhou X., Wang H., Pan J.
|
| Vol 50, No 3 (2016) |
Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling |
|
|
Yakovlev G.E., Frolov D.S., Zubkova A.V., Levina E.E., Zubkov V.I., Solomonov A.V., Sterlyadkin O.K., Sorokin S.A.
|
| Vol 51, No 4 (2017) |
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy |
|
|
Filatov D.O., Kazantseva I.A., Shengurov V.G., Chalkov V.Y., Denisov S.A., Gorshkov A.P., Mishkin V.P.
|
| Vol 52, No 11 (2018) |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
|
|
Yunin P.A., Drozdov Y.N., Khrykin O.I., Grigoryev V.A.
|
| Vol 52, No 7 (2018) |
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers |
|
|
Terukov E.I., Abramov A.S., Andronikov D.A., Emtsev K.V., Panaiotti I.E., Titov A.S., Shelopin G.G.
|
| Vol 53, No 8 (2019) |
Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment |
|
|
Sladkopevtsev B.V., Kotov G.I., Arsentyev I.N., Shashkin I.S., Mittova I.Y., Tomina E.V., Samsonov A.A., Kostenko P.V.
|
| Vol 52, No 4 (2018) |
Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce2S3 |
|
|
Zalessky V.G., Kaminski V.V., Hirai S., Kubota Y., Sharenkova N.V.
|
| Vol 50, No 10 (2016) |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |
|
|
Tomosh K.N., Pavlov A.Y., Pavlov V.Y., Khabibullin R.A., Arutyunyan S.S., Maltsev P.P.
|
| Vol 52, No 2 (2018) |
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range |
|
|
Ulashkevich Y.V., Kaminskiy V.V., Romanova M.V., Sharenkova N.V.
|
| Vol 53, No 15 (2019) |
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques |
|
|
Fedotov S.D., Sokolov E.M., Statsenko V.N., Romashkin A.V., Timoshenkov S.P.
|
| Vol 52, No 1 (2018) |
Investigation of the Modified Structure of a Quantum Cascade Laser |
|
|
Mamutin V.V., Maleev N.A., Vasilyev A.P., Ilyinskaya N.D., Zadiranov Y.M., Usikova A.A., Yagovkina M.A., Shernyakov Y.M., Ustinov V.M.
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