| Edição |
Título |
Arquivo |
| Volume 50, Nº 9 (2016) |
Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells |
|
|
Lashkova N., Maximov A., Ryabko A., Bobkov A., Moshnikov V., Terukov E.
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| Volume 53, Nº 14 (2019) |
Synthesis, Structural and Spectral Properties of Surface Noble Metal Nanostructures for Fiber-Optic Photoacoustic Generation |
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Goncharov V., Kozadaev K., Mikitchuk A., Puzyrev M.
|
| Volume 50, Nº 7 (2016) |
Technique for forming ITO films with a controlled refractive index |
|
|
Kukushkin M., Zakheim D., Pavlov S., Markov L., Smirnova I., Pavluchenko A.
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| Volume 53, Nº 2 (2019) |
Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile |
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Frolov D., Yakovlev G., Zubkov V.
|
| Volume 53, Nº 2 (2019) |
Technique for the Formation of Antireflection Coatings Based on ITO Films |
|
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Markov L., Pavluchenko A., Smirnova I.
|
| Volume 51, Nº 11 (2017) |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
|
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Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Novikov A., Rykov A., Samartsev I., Fefelov A., Yurasov D., Krasilnik Z.
|
| Volume 53, Nº 11 (2019) |
Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys |
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Skipetrov E., Kovalev B., Skipetrova L., Knotko A., Slynko V.
|
| Volume 51, Nº 9 (2017) |
Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper |
|
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Prokofieva L., Nasredinov F., Konstantinov P., Shabaldin A.
|
| Volume 53, Nº 12 (2019) |
Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals |
|
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Bodnar I., Chan B., Pavlovskii V., Svitsiankou I., Yablonskii G.
|
| Volume 50, Nº 9 (2016) |
Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8 |
|
|
Bodnar I.
|
| Volume 50, Nº 8 (2016) |
Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12) |
|
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Tairov B., Gasanova X., Selim-zade R.
|
| Volume 51, Nº 3 (2017) |
Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions |
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Parkhomenko H., Solovan M., Mostovyi A., Ulyanytsky K., Maryanchuk P.
|
| Volume 53, Nº 14 (2019) |
Temperature Dependences of the Hysteresis Optical Properties of CdS-LDPE Polymer Nanocomposites |
|
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Ushakov N., Kosobudsky I.
|
| Volume 52, Nº 11 (2018) |
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz |
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Khabibullin R., Shchavruk N., Ponomarev D., Ushakov D., Afonenko A., Vasil’evskii I., Zaycev A., Danilov A., Volkov O., Pavlovskiy V., Maremyanin K., Gavrilenko V.
|
| Volume 52, Nº 9 (2018) |
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles |
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Stovpiaga E., Eurov D., Kurdyukov D., Smirnov A., Yagovkina M., Yakovlev D., Golubev V.
|
| Volume 53, Nº 8 (2019) |
Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles |
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Kurdyukov D., Feoktistov N., Kirilenko D., Smirnov A., Davydov V., Golubev V.
|
| Volume 51, Nº 7 (2017) |
Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it |
|
|
Gaidar G., Baranskii P.
|
| Volume 50, Nº 11 (2016) |
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon |
|
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Zhukavin R., Kovalevsky K., Orlov M., Tsyplenkov V., Hübers H., Dessmann N., Kozlov D., Shastin V.
|
| Volume 50, Nº 7 (2016) |
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure |
|
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Vasilyev Y., Mikhailov N., Vasilyeva G., Ivánov Y., Zakhar’in A., Andrianov A., Vorobiev L., Firsov D., Grigoriev M., Antonov A., Ikonnikov A., Gavrilenko V.
|
| Volume 52, Nº 12 (2018) |
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors |
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Maremyanin K., Ikonnikov A., Bovkun L., Rumyantsev V., Chizhevskii E., Zasavitskii I., Gavrilenko V.
|
| Volume 50, Nº 12 (2016) |
Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm |
|
|
Maremyanin K., Rumyantsev V., Ikonnikov A., Bovkun L., Chizhevskii E., Zasavitskii I., Gavrilenko V.
|
| Volume 52, Nº 14 (2018) |
Terahertz Optoelectronics of Quantum Rings and Nanohelices |
|
|
Collier T., Alexeev A., Downing C., Kibis O., Portnoi M.
|
| Volume 51, Nº 4 (2017) |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation |
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Ponomarev D., Khabibullin R., Yachmenev A., Maltsev P., Grekhov M., Ilyakov I., Shishkin B., Akhmedzhanov R.
|
| Volume 50, Nº 9 (2016) |
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures |
|
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Bagraev N., Chernev A., Klyachkin L., Malyarenko A., Emel’yanov A., Dubina M.
|
| Volume 51, Nº 4 (2017) |
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates |
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Galiev G., Pushkarev S., Buriakov A., Bilyk V., Mishina E., Klimov E., Vasil’evskii I., Maltsev P.
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