| Issue |
Title |
File |
| Vol 51, No 2 (2017) |
Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes |
|
|
Lenshin A.S., Seredin P.V., Kavetskaya I.V., Minakov D.A., Kashkarov V.M.
|
| Vol 51, No 6 (2017) |
Study of the distribution profile of iron ions implanted into silicon |
|
|
Kozhemyako A.V., Balakshin Y.V., Shemukhin A.A., Chernysh V.S.
|
| Vol 50, No 10 (2016) |
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals |
|
|
Podkopaev O.I., Shimanskiy A.F., Kopytkova S.A., Filatov R.A., Golubovskaya N.O.
|
| Vol 53, No 1 (2019) |
Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals |
|
|
Gladilin A.A., Ilichev N.N., Kalinushkin V.P., Studenikin M.I., Uvarov O.V., Chapnin V.A., Tumorin V.V., Novikov G.G.
|
| Vol 52, No 10 (2018) |
Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films |
|
|
Markov L.K., Pavluchenko A.S., Smirnova I.P., Pavlov S.I.
|
| Vol 50, No 3 (2016) |
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation |
|
|
Tarasova E.A., Khananova A.V., Obolensky S.V., Zemlyakov V.E., Sveshnikov Y.N., Egorkin V.I., Ivanov V.A., Medvedev G.V., Smotrin D.S.
|
| Vol 53, No 15 (2019) |
Study of the Formation Process of Memristor Structures Based on Copper Sulfide |
|
|
Belov A.N., Golishnikov A.A., Mastinin A.M., Perevalov A.A., Shevyakov V.I.
|
| Vol 50, No 8 (2016) |
Study of the impurity photoconductivity in p-InSb using epitaxial p+ contacts |
|
|
Eminov S.O.
|
| Vol 51, No 11 (2017) |
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures |
|
|
Alexeev A.N., Mamaev V.V., Petrov S.I.
|
| Vol 51, No 1 (2017) |
Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds |
|
|
Karavaev M.B., Kirilenko D.A., Ivanova E.V., Popova T.B., Sitnikova A.A., Sedova I.V., Zamoryanskaya M.V.
|
| Vol 50, No 5 (2016) |
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films |
|
|
Avilov V.I., Ageev O.A., Konoplev B.G., Smirnov V.A., Solodovnik M.S., Tsukanova O.G.
|
| Vol 50, No 8 (2016) |
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H |
|
|
Abramov A.S., Andronikov D.A., Emtsev K.V., Kukin A.V., Semenov A.V., Terukova E.E., Titov A.S., Yakovlev S.A.
|
| Vol 53, No 14 (2019) |
Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures |
|
|
Bondarev I.A., Rautskii M.V., Yakovlev I.A., Volochaev M.N., Lukyanenko A.V., Tarasov A.S., Volkov N.V.
|
| Vol 52, No 6 (2018) |
Study of the Properties of II–VI and III–V Semiconductor Quantum Dots |
|
|
Mikhailov A.I., Kabanov V.F., Gorbachev I.A., Glukhovsky E.G.
|
| Vol 50, No 10 (2016) |
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |
|
|
Veselov D.A., Shashkin I.S., Bobretsova Y.K., Bakhvalov K.V., Lutetskiy A.V., Kapitonov V.A., Pikhtin N.A., Slipchenko S.O., Sokolova Z.N., Tarasov I.S.
|
| Vol 52, No 9 (2018) |
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface |
|
|
Smagina Z.V., Zinovyev V.A., Krivyakin G.K., Rodyakina E.E., Kuchinskaya P.A., Fomin B.I., Yablonskiy A.N., Stepikhova M.V., Novikov A.V., Dvurechenskii A.V.
|
| Vol 52, No 6 (2018) |
Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers |
|
|
Pashchenko A.S., Lunin L.S., Chebotarev S.N., Lunina M.L.
|
| Vol 52, No 11 (2018) |
Study of the Structural and Morphological Properties of HPHT Diamond Substrates |
|
|
Yunin P.A., Volkov P.V., Drozdov Y.N., Koliadin A.V., Korolev S.A., Radischev D.B., Surovegina E.A., Shashkin V.I.
|
| Vol 51, No 2 (2017) |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
|
|
Kryzhanovskaya N.V., Polubavkina Y.S., Nevedomskiy V.N., Nikitina E.V., Lazarenko A.A., Egorov A.Y., Maximov M.V., Moiseev E.I., Zhukov A.E.
|
| Vol 51, No 13 (2017) |
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy |
|
|
Sokolov E.M., Fedotov S.D., Statsenko V.N., Timoshenkov S.P., Emelyanov A.V.
|
| Vol 50, No 13 (2016) |
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy |
|
|
Lovygin M.V., Borgardt N.I., Bugaev A.S., Volkov R.L., Seibt M.
|
| Vol 52, No 1 (2018) |
Study of the Structure of Cadmium-Sulfide Nanowire Crystals Synthesized by Vacuum Evaporation and Condensation in a Quasi-Closed Volume |
|
|
Belyaev A.P., Antipov V.V., Rubets V.P.
|
| Vol 50, No 11 (2016) |
Study of the structures of cleaved cross sections by Raman spectroscopy |
|
|
Plankina S.M., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Konnova N.Y., Nezhdanov A.V., Pashenkin I.Y.
|
| Vol 50, No 2 (2016) |
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy |
|
|
Dunaev A.V., Murin D.B., Pivovarenok S.A.
|
| Vol 51, No 5 (2017) |
Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode |
|
|
Gusev A.I., Lyubutin S.K., Rukin S.N., Tsyranov S.N.
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