Issue |
Title |
File |
Vol 53, No 3 (2019) |
Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition |
|
Zvonkov B.N., Vikhrova O.V., Danilov Y.A., Dorokhin M.V., Kudrin A.V., Kalentyeva I.L., Larionova E.A., Kovalskiy V.A., Soltanovich O.A.
|
Vol 52, No 15 (2018) |
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers |
|
Revin M.V., Kotkov A.P., Ivanov V.A., Rad’kov Y.F., Svinkov N.V., Artemov A.N., Gribov B.G.
|
Vol 51, No 11 (2017) |
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity |
|
Derebezov I.A., Gaisler V.A., Gaisler A.V., Dmitriev D.V., Toropov A.I., Fischbach S., Schlehahn A., Kaganskiy A., Heindel T., Bounouar S., Rodt S., Reitzenstein S.
|
Vol 53, No 8 (2019) |
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD |
|
Aleshkin V.Y., Baidus N.V., Dubinov A.A., Kudryavtsev K.E., Nekorkin S.M., Kruglov A.V., Reunov D.G.
|
Vol 53, No 3 (2019) |
Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures |
|
Podolska N.I., Rodin P.B.
|
Vol 50, No 6 (2016) |
Substitutional impurity in single-layer graphene: The Koster–Slater and Anderson models |
|
Davydov S.Y.
|
Vol 50, No 4 (2016) |
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime |
|
Bagraev N.T., Chaikina E.I., Danilovskii E.Y., Gets D.S., Klyachkin L.E., L’vova T.V., Malyarenko A.M.
|
Vol 50, No 6 (2016) |
Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015) |
|
Khokhlov D.R.
|
Vol 51, No 8 (2017) |
Superconducting properties of (Pb0.05Sn0.95)Te doped with indium under conditions of hydrostatic compression |
|
Mikhailin N.Y., Parfeniev R.V., Chernyaev A.V., Shamshur D.V., Andrianov G.O.
|
Vol 52, No 9 (2018) |
Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser |
|
Shkumbatjuk P.S.
|
Vol 52, No 10 (2018) |
Superionic Conductivity of (TlGaSe2)1 – x(TlInS2)x Solid Solutions |
|
Sardarli R.M., Abdullayev A.P., Aliyeva N.A., Salmanov F.T., Yusifov M.Y., Orudjeva A.A.
|
Vol 52, No 2 (2018) |
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers |
|
Zubov F.I., Maximov M.V., Gordeev N.Y., Polubavkina Y.S., Zhukov A.E.
|
Vol 50, No 13 (2016) |
Surface functionalization of single-layer and multilayer graphene upon ultraviolet irradiation |
|
Levin D.D., Bobrinetskiy I.I., Emelianov A.V., Nevolin V.K., Romashkin A.V., Petuhov V.A.
|
Vol 52, No 3 (2018) |
Surface Nanostructures Forming during the Early Stages of the Metal-Assisted Chemical Etching of Silicon. Optical Properties of Silver Nanoparticles |
|
Zharova Y.A., Tolmachev V.A., Bednaya A.I., Pavlov S.I.
|
Vol 51, No 4 (2017) |
Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment |
|
Yafarov R.K., Shanygin V.Y.
|
Vol 50, No 12 (2016) |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
|
Shtrom I.V., Bouravleuv A.D., Samsonenko Y.B., Khrebtov A.I., Soshnikov I.P., Reznik R.R., Cirlin G.E., Dhaka V., Perros A., Lipsanen H.
|
Vol 51, No 1 (2017) |
Surface texture of single-crystal silicon oxidized under a thin V2O5 layer |
|
Nikitin S.E., Verbitskiy V.N., Nashchekin A.V., Trapeznikova I.N., Bobyl A.V., Terukova E.E.
|
Vol 53, No 9 (2019) |
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion |
|
Klimov A.E., Akimov A.N., Akhundov I.O., Golyashov V.A., Gorshkov D.V., Ishchenko D.V., Sidorov G.Y., Suprun S.P., Tarasov A.S., Epov V.S., Tereshchenko O.E.
|
Vol 50, No 6 (2016) |
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect |
|
Gadzhiyev I.M., Buyalo M.S., Gubenko A.E., Egorov A.Y., Usikova A.A., Il’inskaya N.D., Lyutetskiy A.V., Zadiranov Y.M., Portnoi E.L.
|
Vol 51, No 7 (2017) |
Symmetry ratios and structural code of layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
|
Korzhuev M.A., Mikhailova A.B., Kretova M.A., Avilov E.S.
|
Vol 53, No 12 (2019) |
Synthesis and Characterization of Semiconductor Polymer Doped with FeCl3 and I2 |
|
Bouabdallah Daho ., Fontanesi C., Messori M., Dehbi A., Belfedal A.
|
Vol 53, No 16 (2019) |
Synthesis and Comparison of the Electrical Properties of Polyaniline and Poly[(N-2-hydroxyethyl)aniline] |
|
Khadieva A.I., Gorbachuk V.V., Latypov R.R., Stoikov I.I.
|
Vol 51, No 6 (2017) |
Synthesis and electrical properties of Bi2Te3-based thermoelectric materials doped with Er, Tm, Yb, and Lu |
|
Yapryntsev M.N., Lyubushkin R.A., Soklakova O.N., Ivanov O.N.
|
Vol 50, No 9 (2016) |
Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters |
|
Lunin L.S., Lunina M.L., Kravtsov A.A., Sysoev I.A., Blinov A.V.
|
Vol 50, No 6 (2016) |
Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids |
|
Matyushkin L.B., Ryzhov O.A., Aleksandrova O.A., Moshnikov V.A.
|
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