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Issue Title File
Vol 53, No 6 (2019) Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer
Banshchikov A.G., Illarionov Y.Y., Vexler M.I., Wachter S., Sokolov N.S.
Vol 53, No 9 (2019) Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
Shengurov V.G., Filatov D.O., Denisov S.A., Chalkov V.Y., Alyabina N.A., Zaitsev A.V.
Vol 52, No 6 (2018) Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal
Maiboroda I.O., Grishchenko J.V., Ezubchenko I.S., Sokolov I.S., Chernych I.A., Andreev A.A., Zanaveskin M.L.
Vol 53, No 16 (2019) Two Dimensional Bright and Dark Magnetoexcitons Interacting with Quantum Point Vortices
Moskalenko S.A., Moskalenko V.A., Podlesny I.V., Zubac I.A.
Vol 52, No 16 (2018) Two Methods of Calculation Ternary Nanowire Composition
Sibirev N.V., Koryakin A.A., Berdnikov Y.S.
Vol 50, No 3 (2016) Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation
Popov V.D.
Vol 52, No 1 (2018) Two-Terminal Tandem Solar Cells DSC/c-Si: Optimization of TiO2-based Photoelectrode Parameters
Nikolskaia A.B., Vildanova M.F., Kozlov S.S., Shevaleevskiy O.I.
Vol 51, No 1 (2017) Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors
Dubinov A.E., Kitayev I.N.
Vol 53, No 5 (2019) Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates
Abramkin D.S., Shamirzaev T.S.
Vol 52, No 7 (2018) Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation
Ponomarev D.S., Khabibullin R.A., Klochkov A.N., Yachmenev A.E., Bugaev A.S., Khusyainov D.I., Buriakov A.M., Bilyk V.P., Mishina E.D.
Vol 52, No 1 (2018) Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires
Trukhin V.N., Bouravleuv A.D., Mustafin I.A., Cirlin G.E., Kakko J.P., Lipsanen H.
Vol 53, No 16 (2019) Ultrasonic-Assisted Exfoliation of Graphitic Carbon Nitride and its Electrocatalytic Performance in Process of Ethanol Reforming
Chebanenko M.I., Zakharova N.V., Lobinsky A.A., Popkov V.I.
Vol 52, No 14 (2018) Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
Sakharov A.V., Kurbanova N.Y., Demchenko O.I., Sim P.E., Yagovkina M.A., Tsatsulnikov A.F., Usov S.O., Zakheim D.A., Zavarin E.E., Lundin W.V., Velikovskiy L.E.
Vol 53, No 6 (2019) Urbach Rule in MnGa2Se4 Single Crystals Upon Optical Absorption
Niftiyev N.N.
Vol 52, No 2 (2018) Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons
Yafarov R.K.
Vol 52, No 15 (2018) Using Combined Optical Techniques to Control the Shallow Etching Process
Volokhovskiy A.D., Gerasimenko N.N., Petrakov D.S.
Vol 51, No 7 (2017) Utilizing nanotechnology and novel materials and concepts for advanced thermoelectric and thermal management technology development
Mori T.
Vol 50, No 10 (2016) UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities
Mezdrogina M.M., Vinogradov A.Y., Kuzmin R.V., Levitski V.S., Kozanova Y.V., Lyanguzov N.V., Chukichev M.V.
Vol 51, No 3 (2017) Valence-band offsets in strained SiGeSn/Si layers with different tin contents
Bloshkin A.A., Yakimov A.I., Timofeev V.A., Tuktamyshev A.R., Nikiforov A.I., Murashov V.V.
Vol 52, No 6 (2018) Variation in the Conductivity of Polyaniline Nanotubes During Their Formation
Kapralova V.M., Sapurina I.Y., Sudar’ N.T.
Vol 53, No 5 (2019) Variation in the State of 119mSn Impurity Atoms in PbTe during the Establishment of the Radioactive Equilibrium of 119mTe/119Sb Isotopes
Seregin P.P., Marchenko A.V., Nasredinov F.S., Zharkoy A.B.
Vol 51, No 7 (2017) Varistor effect in highly heterogeneous polymer–ZnO systems
Kurbanov M.A., Ahadzade S.M., Ramazanova I.S., Dadashov Z.A., Faradzhzade I.A.
Vol 52, No 11 (2018) Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut
Drozdov Y.N., Khrikin O.I., Yunin P.A.
Vol 53, No 10 (2019) Vertical Field-Effect Transistor with a Controlling GaAs-Based pn Junction
Vostokov N.V., Daniltsev V.M., Kraev S.A., Krukov V.L., Skorokhodov E.V., Strelchenko S.S., Shashkin V.I.
Vol 50, No 1 (2016) Vertical heterostructures based on graphene and other 2D materials
Antonova I.V.
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