| Issue |
Title |
File |
| Vol 51, No 3 (2017) |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
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|
Galiev G.B., Grekhov M.M., Kitaeva G.K., Klimov E.A., Klochkov A.N., Kolentsova O.S., Kornienko V.V., Kuznetsov K.A., Maltsev P.P., Pushkarev S.S.
|
| Vol 53, No 5 (2019) |
The Band-Structure Parameters of Bi1 –xSbx (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients |
|
|
Suslov A., Grabov V.M., Komarov V.A., Demidov E.V., Senkevich S.V., Suslov M.V.
|
| Vol 50, No 10 (2016) |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |
|
|
Benemanskaya G.V., Dementev P.A., Kukushkin S.A., Lapushkin M.N., Osipov A.V., Senkovskiy B.V.
|
| Vol 53, No 16 (2019) |
The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions |
|
|
Kazanov D.R., Evropeytsev E.A., Shubina T.V.
|
| Vol 51, No 7 (2017) |
The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals |
|
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Orekhov A.S., Klechkovskaya V.V., Rakova E.V., Solomkin F.Y., Novikov S.V., Bochkov L.V., Isachenko G.N.
|
| Vol 53, No 1 (2019) |
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films |
|
|
Elistratova M.A., Zakharova I.B., Li G.V., Dubrovin R.M., Sreseli O.M.
|
| Vol 52, No 11 (2018) |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
|
|
Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Antonov I.N.
|
| Vol 50, No 13 (2016) |
The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions |
|
|
Zhukov A.V.
|
| Vol 53, No 12 (2019) |
The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films |
|
|
Asalzadeh S., Yasserian K.
|
| Vol 51, No 12 (2017) |
The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode |
|
|
Ganiyev S., Azim Khairi M., Ahmad Fauzi D., Abdullah Y., Hasbullah N.F.
|
| Vol 50, No 12 (2016) |
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells |
|
|
Aleshkin V.Y., Gavrilenko L.V., Gaponova D.M., Krasil’nik Z.F., Kryzhkov D.I.
|
| Vol 52, No 5 (2018) |
The Features of GaAs Nanowire SEM Images |
|
|
Soshnikov I.P., Kotlyar K.P., Bert N.A., Kirilenko D.A., Bouravleuv A.D., Cirlin G.E.
|
| Vol 53, No 4 (2019) |
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy |
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|
Emelyanov E.A., Vasev A.V., Semyagin B.R., Yesin M.Y., Loshkarev I.D., Vasilenko A.P., Putyato M.A., Petrushkov M.O., Preobrazhenskii V.V.
|
| Vol 53, No 5 (2019) |
The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K |
|
|
Komarov V.A., Grabov V.M., Suslov A.V., Kablukova N.S., Suslov M.V.
|
| Vol 52, No 5 (2018) |
The Impact of the Substrate Material on the Optical Properties of 2D WSe2 Monolayers |
|
|
Schneider L.M., Lippert S., Kuhnert J., Renaud D., Kang K.N., Ajayi O., Halbich M., Abdulmunem O.M., Lin X., Hassoon K., Edalati-Boostan S., Kim Y.D., Heimbrodt W., Yang E.H., Hone J.C., Rahimi-Iman A.
|
| Vol 53, No 16 (2019) |
The Indirect Excitons Contribution to the Polarizability of a Dielectric Nanoparticle |
|
|
Pokutnyi S.I., Dzyuba V.P., Amosov A.V.
|
| Vol 53, No 16 (2019) |
The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots |
|
|
Parkhomenko Y.A., Dement’ev P.A., Moiseev K.D.
|
| Vol 50, No 6 (2016) |
The modification of BaCe0.5Zr0.3Y0.2O3–δ with copper oxide: Effect on the structural and transport properties |
|
|
Lyagaeva Y.G., Vdovin G.K., Nikolaenko I.V., Medvedev D.A., Demin A.K.
|
| Vol 52, No 14 (2018) |
The Oscillations in ESR Spectra of Mn0.11Hg0.89Te in X- and Q-Bands |
|
|
Shestakov A., Fazlizhanov I.I., Yatsyk I.V., Ibragimova M.I., Shustov V.A., Lyadov N.M., Eremina R.M.
|
| Vol 53, No 16 (2019) |
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope |
|
|
Prasolov N.D., Ermakov I.A., Gutkin A.A., Solov’ev V.A., Dorogin L.M., Konnikov S.G., Brunkov P.N.
|
| Vol 53, No 13 (2019) |
The Surface Preparation of Thermoelectric Materials for Deposition of Thin-Film Contact Systems |
|
|
Shtern M.Y., Karavaev I.S., Shtern Y.I., Kozlov A.O., Rogachev M.S.
|
| Vol 51, No 2 (2017) |
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination |
|
|
Arapov Y.G., Gudina S.V., Klepikova A.S., Neverov V.N., Harus G.I., Shelushinina N.G., Yakunin M.V.
|
| Vol 53, No 5 (2019) |
The Thermoelectric Power of Bi1 –xSbx Films (0 ≤ x ≤ 0.15) on Mica and Polyimide Substrates in the Temperature Range of 77–300 K |
|
|
Suslov M.V., Grabov V.M., Komarov V.A., Demidov E.V., Senkevich S.V., Suslov A.V.
|
| Vol 53, No 13 (2019) |
The Thermopower and Electron Mobility in Monophase Monocrystalline SmS in a Wide Temperature Range |
|
|
Popov V.V., Stepanov N.N.
|
| Vol 50, No 12 (2016) |
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |
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Tarasova E.A., Obolenskaya E.S., Hananova A.V., Obolensky S.V., Zemliakov V.E., Egorkin V.I., Nezhenzev A.V., Saharov A.V., Zazul’nokov A.F., Lundin V.V., Zavarin E.E., Medvedev G.V.
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