| Issue |
Title |
File |
| Vol 51, No 11 (2017) |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
|
|
Reznik R.R., Kotlyar K.P., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E.
|
| Vol 52, No 13 (2018) |
McCurdy’s Effects in the Thermal Conductivity of Elastically Anisotropic Crystals in the Mode of Knudsen Phonon-Gas Flow |
|
|
Kuleyev I.G., Kuleyev I.I., Bakharev S.M.
|
| Vol 52, No 13 (2018) |
Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method |
|
|
Usanov D.A., Postelga A.E., Kalyamin A.A., Sharov I.V.
|
| Vol 51, No 10 (2017) |
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots |
|
|
Bayramov F.B., Poloskin E.D., Chernev A.L., Toropov V.V., Dubina M.V., Bairamov B.K.
|
| Vol 51, No 7 (2017) |
Measurement of the thickness of block-structured bismuth films by atomic-force microscopy combined with selective chemical etching |
|
|
Demidov E.V., Komarov V.A., Krushelnitckii A.N., Suslov A.V.
|
| Vol 50, No 13 (2016) |
Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals |
|
|
Usanov D.A., Nikitov S.A., Skripal A.V., Ponomarev D.V., Latysheva E.V.
|
| Vol 52, No 15 (2018) |
Measuring the Effective Masses of the Electrical Conductivity and Density of States by Contactless Microwave Means |
|
|
Usanov D.A., Postelga A.E., Gurov K.A.
|
| Vol 52, No 3 (2018) |
Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities |
|
|
Manyakhin F.I.
|
| Vol 53, No 3 (2019) |
Mechanism and Features of Field Emission in Semiconductors |
|
|
Zhukov N.D., Mikhailov A.I., Mosiyash D.S.
|
| Vol 50, No 10 (2016) |
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures |
|
|
Musaev A.M.
|
| Vol 51, No 10 (2017) |
Mechanism of resistive switching in films based on partially fluorinated graphene |
|
|
Ivanov A.I., Nebogatikova N.A., Kurkina I.I., Antonova I.V.
|
| Vol 53, No 11 (2019) |
Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon |
|
|
Samosvat D.M., Chikalova-Luzina O.P., Zegrya G.G.
|
| Vol 52, No 3 (2018) |
Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |
|
|
Romaka V.A., Rogl P.-., Frushart D., Kaczorowski D.
|
| Vol 52, No 1 (2018) |
Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGdxS Thin Films |
|
|
Kaminsky V.V., Soloviev S.M., Khavrov G.D., Sharenkova N.V.
|
| Vol 50, No 1 (2016) |
Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals |
|
|
Korsunska N.E., Shulga E.P., Stara T.R., Litvin P.M., Bondarenko V.A.
|
| Vol 50, No 12 (2016) |
Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells |
|
|
Fadeev M.A., Varavin V.S., Mikhailov N.N., Dvoretsky S.A., Gavrilenko V.I., Teppe F., Kozlov D.V., Rumyantsev V.V., Morozov S.V., Kadykov A.M.
|
| Vol 53, No 12 (2019) |
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |
|
|
Mokhov D.V., Berezovskaya T.N., Nikitina E.V., Shubina K.Y., Mizerov A.M., Bouravleuv A.D.
|
| Vol 52, No 5 (2018) |
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands |
|
|
Evropeytsev E.A., Semenov A.N., Nechaev D.V., Jmerik V.N., Kaibyshev V.K., Troshkov S.I., Brunkov P.N., Usikova A.A., Ivanov S.V., Toropov A.A.
|
| Vol 52, No 14 (2018) |
Metastable Bound States of the Two-Dimensional Bimagnetoexcitons in the Lowest Landau Levels Approximation |
|
|
Moskalenko S.A., Khadzhi P.I., Podlesny I.V., Dumanov E.V., Liberman M.A., Zubac I.A.
|
| Vol 50, No 6 (2016) |
Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |
|
|
Mikhaylov A.I., Afanasyev A.V., Ilyin V.A., Luchinin V.V., Reshanov S.A., Schöner A.
|
| Vol 50, No 11 (2016) |
Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser |
|
|
Baydus N.V., Nekorkin S.M., Kolpakov D.A., Ershov A.V., Aleshkin V.Y., Dubinov A.A., Afonenko A.A.
|
| Vol 50, No 2 (2016) |
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon |
|
|
Kryuchenko Y.V., Kostylyov V.P., Sokolovskyi I.O., Abramov A.S., Bobyl A.V., Panaiotti I.E., Terukov E.I., Sachenko A.V.
|
| Vol 50, No 13 (2016) |
Method of investigation of galvanomagnetic properties of CdxHg1 − xTe and CdxHg1 − xTe/Cd1 − yZnyTe |
|
|
Golubyatnikov V.A., Lysenko A.P., Belov A.G., Kanevskii V.E.
|
| Vol 50, No 13 (2016) |
Methods for suppressing optical crosstalk between the cells of a silicon photomultiplier array |
|
|
Zhukov A.A., Popova E.V., Gerasimenko N.N.
|
| Vol 50, No 13 (2016) |
Methods of accounting for inclusion-shape randomness in calculating the effective dielectric characteristics of heterogeneous textured materials |
|
|
Zavgorodnyaya M.I., Lavrov I.V.
|
| 726 - 750 of 1443 Items |
<< < 25 26 27 28 29 30 31 32 33 34 > >> |
