| Шығарылым |
Атауы |
Файл |
| Том 52, № 13 (2018) |
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |
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Emtsev V., Abrosimov N., Kozlovski V., Poloskin D., Oganesyan G.
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| Том 52, № 9 (2018) |
Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide |
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Rut’kov E., Gall N.
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| Том 51, № 10 (2017) |
Interdiffusion and phase formation in the Fe–TiO2 thin-film system |
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Afonin N., Logacheva V.
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| Том 52, № 2 (2018) |
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells |
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Pavlov N., Zegrya G., Zegrya A., Bugrov V.
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| Том 52, № 13 (2018) |
Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride |
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Ushakov V., Aminev D., Krivobok V.
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| Том 52, № 15 (2018) |
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures |
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Egorkin V., Zemlyakov V., Nezhentsev A., Garmash V.
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| Том 53, № 4 (2019) |
Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy |
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Aslanyan A., Avakyants L., Bokov P., Chervyakov A.
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| Том 53, № 7 (2019) |
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy |
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Seredin P., Lenshin A., Zolotukhin D., Goloshchapov D., Mizerov A., Arsentyev I., Beltyukov A.
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| Том 53, № 1 (2019) |
Investigation into the Memristor Effect in Nanocrystalline ZnO Films |
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Smirnov V., Tominov R., Avilov V., Alyabieva N., Vakulov Z., Zamburg E., Khakhulin D., Ageev O.
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| Том 53, № 3 (2019) |
Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures |
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Kabalnov Y., Trufanov A., Obolensky S.
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| Том 52, № 1 (2018) |
Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field |
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Chernenko A., Brichkin A., Novikov S., Schneider C., Hoefling S.
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| Том 53, № 11 (2019) |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
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Gagis G., Levin R., Marichev A., Pushnyi B., Scheglov M., Ber B., Kazantsev D., Kudriavtsev Y., Vlasov A., Popova T., Chistyakov D., Kuchinskii V., Vasil’ev V.
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| Том 52, № 16 (2018) |
Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications |
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Ajayan J., Ravichandran T., Mohankumar P., Prajoon P., Pravin J., Nirmal D.
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| Том 51, № 12 (2017) |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
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Rumyantsev V., Kadykov A., Fadeev M., Dubinov A., Utochkin V., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
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| Том 52, № 16 (2018) |
Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction |
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Yajie Li ., Wang P., Meng F., Yu H., Zhou X., Wang H., Pan J.
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| Том 50, № 3 (2016) |
Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling |
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Yakovlev G., Frolov D., Zubkova A., Levina E., Zubkov V., Solomonov A., Sterlyadkin O., Sorokin S.
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| Том 51, № 4 (2017) |
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy |
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Filatov D., Kazantseva I., Shengurov V., Chalkov V., Denisov S., Gorshkov A., Mishkin V.
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| Том 52, № 11 (2018) |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
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Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
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| Том 52, № 7 (2018) |
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers |
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Terukov E., Abramov A., Andronikov D., Emtsev K., Panaiotti I., Titov A., Shelopin G.
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| Том 53, № 8 (2019) |
Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment |
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Sladkopevtsev B., Kotov G., Arsentyev I., Shashkin I., Mittova I., Tomina E., Samsonov A., Kostenko P.
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| Том 52, № 4 (2018) |
Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce2S3 |
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Zalessky V., Kaminski V., Hirai S., Kubota Y., Sharenkova N.
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| Том 50, № 10 (2016) |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |
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Tomosh K., Pavlov A., Pavlov V., Khabibullin R., Arutyunyan S., Maltsev P.
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| Том 52, № 2 (2018) |
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range |
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Ulashkevich Y., Kaminskiy V., Romanova M., Sharenkova N.
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| Том 53, № 15 (2019) |
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques |
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Fedotov S., Sokolov E., Statsenko V., Romashkin A., Timoshenkov S.
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| Том 52, № 1 (2018) |
Investigation of the Modified Structure of a Quantum Cascade Laser |
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Mamutin V., Maleev N., Vasilyev A., Ilyinskaya N., Zadiranov Y., Usikova A., Yagovkina M., Shernyakov Y., Ustinov V.
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| Нәтижелер 1443 - 626/650 |
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