| Issue |
Title |
File |
| Vol 50, No 10 (2016) |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
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|
Khabibullin R.A., Shchavruk N.V., Pavlov A.Y., Ponomarev D.S., Tomosh K.N., Galiev R.R., Maltsev P.P., Zhukov A.E., Cirlin G.E., Zubov F.I., Alferov Z.I.
|
| Vol 50, No 11 (2016) |
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications |
|
|
Dorokhin M.V., Pavlov D.A., Bobrov A.I., Danilov Y.A., Lesnikov V.P., Zvonkov B.N., Zdoroveyshchev A.V., Kudrin A.V., Demina P.B., Usov Y.V., Nikolichev D.E., Kryukov R.N., Zubkov S.Y.
|
| Vol 51, No 1 (2017) |
Fabrication of oxide heterostructures for promising solar cells of a new generation |
|
|
Bobkov A.A., Lashkova N.A., Maximov A.I., Moshnikov V.A., Nalimova S.S.
|
| Vol 52, No 5 (2018) |
Fabrication of Silicon Nanostructures for Application in Photonics |
|
|
Kamalieva A.N., Toropov N.A., Vartanyan T.A., Baranov M.A., Parfenov P.S., Bogdanov K.V., Zharova Y.A., Tolmachev V.A.
|
| Vol 52, No 8 (2018) |
Features of 63,65Cu NMR Spectra in the Local Field of Samples of CuFeS2 Semiconductor Mineral from Oceanic Sulfide Deposits |
|
|
Matukhin V.L., Pogoreltsev A.I., Gavrilenko A.N., Garkavyi S.O., Shmidt E.V., Babaeva S.F., Sukhanova A.A., Terukov E.I.
|
| Vol 50, No 5 (2016) |
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure |
|
|
Vexler M.I., Grekhov I.V.
|
| Vol 50, No 7 (2016) |
Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor |
|
|
Romaka V.A., Rogl P., Romaka V.V., Kaczorowski D., Stadnyk Y.V., Krayovskyy V.Y., Horyn A.M.
|
| Vol 53, No 6 (2019) |
Features of Defect Formation in Nanostructured Silicon under Ion Irradiation |
|
|
Kozhemiako A.V., Evseev A.P., Balakshin Y.V., Shemukhin A.A.
|
| Vol 50, No 6 (2016) |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
|
|
Danilov L.V., Petukhov A.A., Mikhailova M.P., Zegrya G.G., Ivanov E.V., Yakovlev Y.P.
|
| Vol 50, No 2 (2016) |
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements |
|
|
Lobanov D.N., Novikov A.V., Andreev B.A., Bushuykin P.A., Yunin P.A., Skorohodov E.V., Krasilnikova L.V.
|
| Vol 53, No 2 (2019) |
Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates |
|
|
Shalimova M.B., Sachuk N.V.
|
| Vol 50, No 4 (2016) |
Features of photoinduced magnetism in some yttrium–iron-garnet single crystals |
|
|
Vorob’eva N.V., Mityukhlyaev V.B.
|
| Vol 51, No 2 (2017) |
Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y |
|
|
Romaka V.A., Rogl P., Romaka V.V., Kaczorowski D., Krayovskyy V.Y., Stadnyk Y.V., Horyn A.M.
|
| Vol 53, No 4 (2019) |
Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures |
|
|
Goldman E.I., Levashov S.A., Chucheva G.V.
|
| Vol 50, No 4 (2016) |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode |
|
|
Vasil’evskii I.S., Pushkarev S.S., Grekhov M.M., Vinichenko A.N., Lavrukhin D.V., Kolentsova O.S.
|
| Vol 52, No 13 (2018) |
Features of the Electron Mobility in the n-InSe Layered Semiconductor |
|
|
Abdinov A.S., Babayeva R.F.
|
| Vol 53, No 9 (2019) |
Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes |
|
|
Ikonnikov A.V., Chernichkin V.I., Dudin V.S., Akopian D.A., Akimov A.N., Klimov A.E., Tereshchenko O.E., Ryabova L.I., Khokhlov D.R.
|
| Vol 52, No 12 (2018) |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
|
|
Mizerov A.M., Timoshnev S.N., Sobolev M.S., Nikitina E.V., Shubina K.Y., Berezovskaia T.N., Shtrom I.V., Bouravleuv A.D.
|
| Vol 53, No 7 (2019) |
Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides |
|
|
Orlov L.K., Ivina N.L., Bozhenkin V.A.
|
| Vol 53, No 2 (2019) |
Features of the Properties of Rare-Earth Semiconductors |
|
|
Kaminski V.V., Sharenkova N.V.
|
| Vol 52, No 13 (2018) |
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations |
|
|
Semenov A.N., Nechaev D.V., Troshkov S.I., Nashchekin A.V., Brunkov P.N., Jmerik V.N., Ivanov S.V.
|
| Vol 51, No 11 (2017) |
Features of the selective manganese doping of GaAs structures |
|
|
Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Dorokhin M.V., Pavlov D.A., Antonov I.N., Drozdov M.N., Usov Y.V.
|
| Vol 53, No 10 (2019) |
Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations |
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Kocharovskaya E.R., Mishin A.V., Ryabinin I.S., Kocharovsky V.V.
|
| Vol 53, No 4 (2019) |
Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures |
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|
Belyaev A.E., Boltovets N.S., Klad’ko V.P., Safryuk-Romanenko N.V., Lubchenko A.I., Sheremet V.N., Shynkarenko V.V., Slepova A.S., Pilipenko V.A., Petlitskaya T.V., Pilipchuk A.S., Konakova R.V., Sachenko A.V.
|
| Vol 53, No 12 (2019) |
Features of the Temperature Dependences of the Photoconductivity of Organometallic CH3NH3PbI3 Perovskite Films |
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Amasev D.V., Tameev A.R., Kazanskii A.G.
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