| Шығарылым |
Атауы |
Файл |
| Том 50, № 5 (2016) |
Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure |
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Gusev A., Sadovnikov S.
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| Том 51, № 12 (2017) |
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential |
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Bovkun L., Ikonnikov A., Aleshkin V., Krishtopenko S., Antonov A., Spirin K., Mikhailov N., Dvoretsky S., Gavrilenko V.
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| Том 52, № 5 (2018) |
Air-Oxidation of Nb Nano-Films |
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Lubenchenko A., Batrakov A., Ivanov D., Lubenchenko O., Lashkov I., Pavolotsky A., Schleicher B., Albert N., Nielsch K.
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| Том 51, № 12 (2017) |
Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications |
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Maache M., Devers T., Chala A.
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| Том 52, № 13 (2018) |
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |
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Khvostikov V., Kalinovskiy V., Sorokina S., Shvarts M., Potapovich N., Khvostikova O., Vlasov A., Andreev V.
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| Том 52, № 12 (2018) |
All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating |
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Shashkin I., Soboleva O., Gavrina P., Zolotarev V., Slipchenko S., Pikhtin N.
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| Том 51, № 4 (2017) |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures |
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Slapovskiy D., Pavlov A., Pavlov V., Klekovkin A.
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| Том 51, № 3 (2017) |
AlN/GaN heterostructures for normally-off transistors |
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Zhuravlev K., Malin T., Mansurov V., Tereshenko O., Abgaryan K., Reviznikov D., Zemlyakov V., Egorkin V., Parnes Y., Tikhomirov V., Prosvirin I.
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| Том 52, № 5 (2018) |
Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography |
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Lukyanenko A., Smolyarova T.
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| Том 51, № 11 (2017) |
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection |
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Polischuk O., Fateev D., Popov V.
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| Том 53, № 16 (2019) |
An Estimate for the Nonradiative Linewidths of the Quasibound Electron-Hole Pairs in Narrow Quantum Wells |
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Belov P.
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| Том 53, № 13 (2019) |
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications |
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Chugh N., Kumar M., Bhattacharya M., Gupta R.
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| Том 52, № 12 (2018) |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
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Venediktov M., Dukov D., Krevskiy M., Metelkin I., Chukov G., Elesin V., Obolensky S., Bozhen’kina A., Tarasova E., Fefelov A.
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| Том 51, № 8 (2017) |
Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)]m[(Bi, Sb)2(Te, Se)3]n (m, n = 0, 1, 2,...) family within the theory of closely packed spheres |
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Korzhuev M., Mihajlova A., Kretova M., Avilov E.
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| Том 52, № 10 (2018) |
Analysis of the Features of Hot-Carrier Degradation in FinFETs |
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Makarov A., Tyaginov S., Kaczer B., Jech M., Chasin A., Grill A., Hellings G., Vexler M., Linten D., Grasser T.
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| Том 51, № 11 (2017) |
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |
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Tarasova E., Obolensky S., Galkin O., Hananova A., Makarov A.
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| Том 51, № 2 (2017) |
Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors |
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Yurkov S., Mnatsakanov T., Levinshtein M., Tandoev A., Palmour J.
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| Том 53, № 6 (2019) |
Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory |
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Morozova N., Miroshnikova I., Galstyan V.
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| Том 52, № 7 (2018) |
Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates |
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Ivanenko I., Krasnoshchekov S., Pavlikov A.
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| Том 52, № 15 (2018) |
Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy |
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Iusipova I.
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| Том 53, № 13 (2019) |
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation |
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Patel S., Kumar D., Chaurasiya N., Tripathi S.
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| Том 50, № 11 (2016) |
Anharmonic Bloch oscillations of electrons in electrically biased superlattices |
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Ivanov K., Girshova E., Kaliteevski M., Clark S., Gallant A.
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| Том 53, № 3 (2019) |
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals |
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Badalova Z., Abdullayev N., Azhdarov G., Aliguliyeva K., Gahramanov S., Nemov S., Mamedov N.
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| Том 51, № 10 (2017) |
Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell |
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Gutkin A., Averkiev N.
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| Том 50, № 11 (2016) |
Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films |
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Klimov A., Epov V.
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| Нәтижелер 1443 - 26/50 |
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