| Шығарылым |
Атауы |
Файл |
| Том 51, № 11 (2017) |
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films |
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Akimov A., Klimov A., Suprun S., Epov V.
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| Том 53, № 2 (2019) |
Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering |
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Zaitsev S., Vaschilin V., Kolesnik V., Limarenko M., Prokhorenkov D., Evtushenko E.
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| Том 52, № 10 (2018) |
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) |
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Undalov Y., Terukov E., Trapeznikova I.
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| Том 50, № 3 (2016) |
Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers |
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Yugov A., Malahov S., Donskov A., Duhnovskii M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
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| Том 50, № 11 (2016) |
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn |
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Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Drozdov M.
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| Том 53, № 8 (2019) |
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition |
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Uvarov A., Zelentsov K., Gudovskikh A.
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| Том 52, № 5 (2018) |
Effect of Transverse Electric Field on Polariton Reflectance Spectra of Wide Quantum Wells |
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Loginov D., Donets A.
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| Том 50, № 2 (2016) |
Effect of transverse electric field on the longitudinal current–voltage characteristic of graphene superlattice |
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Kryuchkov S., Kukhar’ E.
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| Том 50, № 8 (2016) |
Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure |
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Gadzhialiev M., Pirmagomedov Z., Efendieva T.
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| Том 53, № 5 (2019) |
Effective Bi–Sb Crystals for Thermoelectric Cooling at Temperatures of T ≲ 180 K |
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Sidorenko N., Dashevsky Z.
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| Том 53, № 12 (2019) |
Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb1 –xAgxS Solid Solutions |
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Sadovnikov S.
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| Том 51, № 8 (2017) |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
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Lebedev A., Ber B., Oganesyan G., Belov S., Lebedev S., Nikitina I., Seredova N., Shakhov L., Kozlovski V.
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| Том 51, № 10 (2017) |
Effects of local photoexcitation of high-concentration charge carriers in silicon |
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Musaev A.
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| Том 50, № 10 (2016) |
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen |
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Bochkareva N., Sheremet I., Shreter Y.
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| Том 50, № 8 (2016) |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
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Pankin D., Smirnov M., Davydov V., Smirnov A., Zavarin E., Lundin W.
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| Том 50, № 4 (2016) |
Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire |
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El Ghazi H., Jorio A.
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| Том 52, № 2 (2018) |
Electrical Activity of Extended Defects in Multicrystalline Silicon |
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Pescherova S., Yakimov E., Nepomnyashchikh A., Pavlova L., Feklisova O., Presnyakov R.
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| Том 53, № 4 (2019) |
Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols |
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Bubenov S., Dorofeev S., Kononov N., Davydova D.
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| Том 53, № 7 (2019) |
Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures |
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Guseynov R., Tanriverdiyev V., Belenky G., Kipshidze G., Aliyeva Y., Aliguliyeva K., Alizade E., Ahmadova K., Abdullayev N., Mamedov N., Zverev V.
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| Том 50, № 8 (2016) |
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures |
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Solovan M., Mostovyi A., Brus V., Maistruk E., Maryanchuk P.
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| Том 50, № 12 (2016) |
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface |
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Koryazhkina M., Tikhov S., Gorshkov O., Kasatkin A., Antonov I.
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| Том 50, № 3 (2016) |
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction |
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Orletsky I., Ilashchuk M., Brus V., Marianchuk P., Solovan M., Kovalyuk Z.
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| Том 53, № 2 (2019) |
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates |
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Galiev G., Klimov E., Klochkov A., Kopylov V., Pushkarev S.
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| Том 51, № 9 (2017) |
Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation |
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Ponomarev D., Khabibullin R., Yachmenev A., Pavlov A., Slapovskiy D., Glinskiy I., Lavrukhin D., Ruban O., Maltsev P.
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| Том 52, № 3 (2018) |
Electrical Breakdown in Pure n- and p-Si |
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Bannaya V., Nikitina E.
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| Нәтижелер 1443 - 301/325 |
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