| Issue |
Section |
Title |
File |
| Vol 50, No 5 (2016) |
Spectroscopy, Interaction with Radiation |
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Magnetospectroscopy of double HgTe/CdHgTe quantum wells |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells |
|
| Vol 51, No 5 (2017) |
Physics of Semiconductor Devices |
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates |
|
| Vol 51, No 10 (2017) |
Physics of Semiconductor Devices |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
|
| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
|
| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range |
|
| Vol 52, No 9 (2018) |
Physics of Semiconductor Devices |
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
|
| Vol 53, No 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD |
|
| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm |
|
