Fabrication, Treatment, and Testing of Materials and Structures

Выпуск	Название	Файл
Том 51, № 1 (2017)	Application of B₁₂N₁₂ and B₁₂P₁₂ as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study	(Eng)
Rad A.
Том 51, № 1 (2017)	InGaN/GaN light-emitting diode microwires of submillimeter length	(Eng)
Lundin W., Rodin S., Sakharov A., Lundina E., Usov S., Zadiranov Y., Troshkov S., Tsatsulnikov A.
Том 50, № 10 (2016)	Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si₃N₄ passivation	(Eng)
Tomosh K., Pavlov A., Pavlov V., Khabibullin R., Arutyunyan S., Maltsev P.
Том 50, № 9 (2016)	Formation of the low-resistivity compound Cu₃Ge by low-temperature treatment in an atomic hydrogen flux	(Eng)
Erofeev E., Kazimirov A., Fedin I., Kagadei V.
Том 50, № 9 (2016)	Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs	(Eng)
Tsatsulnikov A., Lundin W., Sakharov A., Zavarin E., Usov S., Nikolaev A., Yagovkina M., Ustinov V., Cherkashin N.
Том 50, № 9 (2016)	Conditions of growth of high-quality relaxed Si_1–xGe_x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire	(Eng)
Shengurov V., Chalkov V., Denisov S., Matveev S., Nezhdanov A., Mashin A., Filatov D., Stepikhova M., Krasilnik Z.
Том 50, № 9 (2016)	Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells	(Eng)
Lashkova N., Maximov A., Ryabko A., Bobkov A., Moshnikov V., Terukov E.
Том 50, № 9 (2016)	Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates	(Eng)
Seredin P., Goloshchapov D., Lenshin A., Lukin A., Fedyukin A., Arsentyev I., Bondarev A., Lubyanskiy Y., Tarasov I.
Том 50, № 8 (2016)	Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation	(Eng)
Aleksandrov P., Baranova E., Budaragin V.
Том 50, № 8 (2016)	On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology	(Eng)
Serafimovich P., Stepikhova M., Kazanskiy N., Gusev S., Egorov A., Skorokhodov E., Krasilnik Z.
Том 50, № 8 (2016)	On a two-layer Si₃N₄/SiO₂ dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs	(Eng)
Arutyunyan S., Pavlov A., Pavlov B., Tomosh K., Fedorov Y.
Том 50, № 8 (2016)	Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies	(Eng)
Pokotilo Y., Petukh A., Litvinov V., Markevich V., Abrosimov N., Kamyshan A., Giro A., Solyanikova K.
Том 50, № 8 (2016)	Changes in the conductivity of lead-selenide thin films after plasma etching	(Eng)
Zimin S., Amirov I., Naumov V.
Том 50, № 7 (2016)	Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy	(Eng)
Parkhomenko Y., Dement’ev P., Moiseev K.
Том 50, № 7 (2016)	Chloride epitaxy of β-Ga₂O₃ layers grown on c-sapphire substrates	(Eng)
Nikolaev V., Pechnikov A., Stepanov S., Sharofidinov S., Golovatenko A., Nikitina I., Smirnov A., Bugrov V., Romanov A., Brunkov P., Kirilenko D.
Том 50, № 7 (2016)	Technique for forming ITO films with a controlled refractive index	(Eng)
Kukushkin M., Zakheim D., Pavlov S., Markov L., Smirnova I., Pavluchenko A.
Том 50, № 6 (2016)	Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids	(Eng)
Matyushkin L., Ryzhov O., Aleksandrova O., Moshnikov V.
Том 50, № 6 (2016)	On the photon annealing of silicon-implanted gallium-nitride layers	(Eng)
Seleznev B., Moskalev G., Fedorov D.
Том 50, № 6 (2016)	The modification of BaCe_0.5Zr_0.3Y_0.2O_3–δ with copper oxide: Effect on the structural and transport properties	(Eng)
Lyagaeva Y., Vdovin G., Nikolaenko I., Medvedev D., Demin A.
Том 50, № 5 (2016)	Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag₂S/Ag nanoheterostructure	(Eng)
Gusev A., Sadovnikov S.
Том 50, № 5 (2016)	Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates	(Eng)
Kozlovskiy V., Krivobok V., Kuznetsov P., Nikolaev S., Onistchenko E., Pruchkina A., Temiryazev A.
Том 50, № 5 (2016)	Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon	(Eng)
Guk I., Shandybina G., Yakovlev E.
Том 50, № 5 (2016)	On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n⁺-GaN substrates	(Eng)
Virko M., Kogotkov V., Leonidov A., Voronenkov V., Rebane Y., Zubrilov A., Gorbunov R., Latyshev P., Bochkareva N., Lelikov Y., Tarhin D., Smirnov A., Davydov V., Shreter Y.
Том 50, № 4 (2016)	On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy	(Eng)
Sharofidinov S., Nikolaev V., Smirnov A., Chikiryaka A., Nikitina I., Odnoblyudov M., Bugrov V., Romanov A.
Том 50, № 4 (2016)	Specific features of doping with antimony during the ion-beam crystallization of silicon	(Eng)
Pashchenko A., Chebotarev S., Lunin L., Irkha V.
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