Issue |
Title |
File |
Vol 51, No 7 (2017) |
On a carbon nanostructure-based thermoelectric converter with record parameters |
|
Eidelman E.D.
|
Vol 50, No 1 (2016) |
On a combined approach to studying the correlation parameters of self-organizing structures |
|
Alpatov A.V., Vikhrov S.P., Vishnyakov N.V., Mursalov S.M., Rybin N.B., Rybina N.V.
|
Vol 51, No 6 (2017) |
On a neutron detector based on TlInSe2 crystals intercalated with a lithium isotope |
|
Alekseev I.V., Goremychkin E.A., Gundorin N.A., Petrenko A.V., Sashin I.L.
|
Vol 52, No 1 (2018) |
On a New Mechanism for the Realization of Ohmic Contacts |
|
Sachenko A.V., Belyaev A.E., Konakova R.V.
|
Vol 50, No 12 (2016) |
On a new method of heterojunction formation in III–V nanowires |
|
Sibirev N.V., Koryakin A.A., Dubrovskii V.G.
|
Vol 50, No 4 (2016) |
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy |
|
Sharofidinov S.S., Nikolaev V.I., Smirnov A.N., Chikiryaka A.V., Nikitina I.P., Odnoblyudov M.A., Bugrov V.E., Romanov A.E.
|
Vol 50, No 8 (2016) |
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology |
|
Serafimovich P.G., Stepikhova M.V., Kazanskiy N.L., Gusev S.A., Egorov A.V., Skorokhodov E.V., Krasilnik Z.F.
|
Vol 50, No 8 (2016) |
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs |
|
Arutyunyan S.S., Pavlov A.Y., Pavlov B.Y., Tomosh K.N., Fedorov Y.V.
|
Vol 50, No 1 (2016) |
On controlling the electronic states of shallow donors using a finite-size metal gate |
|
Levchuk E.A., Makarenko L.F.
|
Vol 50, No 3 (2016) |
On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition |
|
Klochko N.P., Klepikova K.S., Kopach V.R., Khrypunov G.S., Myagchenko Y.O., Melnychuk E.E., Lyubov V.M., Kopach A.V.
|
Vol 50, No 7 (2016) |
On current spreading in solar cells: a two-parameter tube model |
|
Mintairov M.A., Evstropov V.V., Mintairov S.A., Timoshina N.K., Shvarts M.Z., Kalyuzhnyy N.A.
|
Vol 52, No 14 (2018) |
On Derivation of Dresselhaus Spin-Splitting Hamiltonians in One-Dimensional Electron Systems |
|
Kokurin I.A.
|
Vol 53, No 5 (2019) |
On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes |
|
Davydov S.Y.
|
Vol 50, No 3 (2016) |
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC |
|
Kyuregyan A.S.
|
Vol 50, No 9 (2016) |
On methods of determining the band gap of semiconductor structures with p–n junctions |
|
Vikulin I.M., Korobitsyn B.V., Kriskiv S.K.
|
Vol 52, No 1 (2018) |
On Mobility of Definite Energy Charge Carriers |
|
Belousov Y.M., Gorelkin V.N., Chernousov I.V.
|
Vol 52, No 8 (2018) |
On Recombination Processes in CdS–PbS Films |
|
Rokakh A.G., Shishkin M.I., Atkin V.S.
|
Vol 53, No 9 (2019) |
On the Amplification of Terahertz Radiation by High-Q Resonant Plasmons in a Periodic Graphene Bilayer under Plasmon-Mode Anticrossing |
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
Vol 53, No 11 (2019) |
On the Anisotropic Trigger Electrical Properties of Two-Dimensional Superlattices |
|
Zav’yalov D.V., Konchenkov V.I., Kryuchkov S.V.
|
Vol 53, No 12 (2019) |
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges |
|
Torkhov N.A., Babak L.I., Kokolov A.A.
|
Vol 52, No 8 (2018) |
On the Application of Silicate Glasses with CdSxSe1–x Semiconductor Nanocrystals as Optical Thermometers and Optical Filters with a Controlled Absorption Edge |
|
Petrosyan P.G., Grigoryan L.N., Musaelyan G.A.
|
Vol 52, No 12 (2018) |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
|
Baidus N.V., Yunin P.A., Shaleev M.V., Reunov D.G., Rykov A.V., Novikov A.V., Nekorkin S.M., Kudryavtsev K.E., Krasilnik Z.F., Dubinov A.A., Aleshkin V.Y., Yurasov D.V.
|
Vol 53, No 10 (2019) |
On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity |
|
Kocharovsky V.V., Kukushkin V.A., Tarasov S.V., Kocharovskaya E.R., Kocharovsky V.V.
|
Vol 51, No 12 (2017) |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
|
Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V., Krishtopenko S.S., Aleshkin V.Y., Kadykov A.M., Orlita M., Potemski M., Gavrilenko V.I., Morozov S.V., Dvoretsky S.A., Mikhailov N.N.
|
Vol 53, No 5 (2019) |
On the Band Structure of Bi2Te3 |
|
Nemov S.A., Ulashkevich Y.V., Rulimov A.A., Demchenko A.E., Allahkhah A.A., Sveshnikov I.V., Dzhafarov M.
|
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