| Issue |
Title |
File |
| Vol 51, No 4 (2017) |
On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes |
|
|
Emelianov A.V., Romashkin A.V., Tsarik K.A., Nasibulin A.G., Nevolin V.K., Bobrinetskiy I.I.
|
| Vol 52, No 9 (2018) |
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures |
|
|
Kolodeznyi E.S., Kurochkin A.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinsky L.Y., Savelyev A.V., Egorov A.Y., Denisov D.V.
|
| Vol 53, No 10 (2019) |
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium |
|
|
Tsyplenkov V.V., Shastin V.N.
|
| Vol 52, No 12 (2018) |
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation |
|
|
Tsyplenkov V.V., Shastin V.N.
|
| Vol 50, No 5 (2016) |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
|
|
Virko M.V., Kogotkov V.S., Leonidov A.A., Voronenkov V.V., Rebane Y.T., Zubrilov A.S., Gorbunov R.I., Latyshev P.E., Bochkareva N.I., Lelikov Y.S., Tarhin D.V., Smirnov A.N., Davydov V.Y., Shreter Y.G.
|
| Vol 51, No 1 (2017) |
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire |
|
|
Zubrilov A.S., Gorbunov R.I., Latishev F.E., Bochkareva N.I., Lelikov Y.S., Tarkhin D.V., Smirnov A.N., Davydov V.Y., Sheremet I.A., Shreter Y.G., Voronenkov V.V., Virko M.V., Kogotkov V.S., Leonidov A.A., Pinchuk A.V.
|
| Vol 51, No 6 (2017) |
On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects |
|
|
Mnatsakanov T.T., Levinshtein M.E., Shuman V.B., Seredin B.M.
|
| Vol 50, No 6 (2016) |
On the local injection of emitted electrons into micrograins on the surface of AIII–BV semiconductors |
|
|
Zhukov N.D., Glukhovskoi E.G., Khazanov A.A.
|
| Vol 50, No 10 (2016) |
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) |
|
|
Andreev V.M., Malevskiy D.A., Pokrovskiy P.V., Rumyantsev V.D., Chekalin A.V.
|
| Vol 53, No 3 (2019) |
On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires |
|
|
Koryakin A.A., Kukushkin S.A., Sibirev N.V.
|
| Vol 53, No 7 (2019) |
On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure |
|
|
Domashevskaya E.P., Goloshchapov D.L., Dambos A.K., Rudnev E.V., Grechkina M.V., Ryabtsev S.V.
|
| Vol 51, No 6 (2017) |
On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride |
|
|
Lukyanova L.N., Bibik A.Y., Aseev V.A., Usov O.A., Makarenko I.V., Petrov V.N., Nikonorov N.V.
|
| Vol 53, No 1 (2019) |
On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect |
|
|
Goldman E.I., Nabiev A., Naryshkina V.G., Chucheva G.V.
|
| Vol 50, No 6 (2016) |
On the ohmicity of Schottky contacts |
|
|
Sachenko A.V., Belyaev A.E., Konakova R.V.
|
| Vol 51, No 4 (2017) |
On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–xSbx (0.07 ≤ x ≤ 0.2) |
|
|
Muntyanu F.M., Gheorghitsa E.I., Gilewski A., Chistol V., Bejan V., Munteanu V.
|
| Vol 53, No 11 (2019) |
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates |
|
|
Seredin P.V., Fedyukin A.V., Terekhov V.A., Barkov K.A., Arsentyev I.N., Bondarev A.D., Fomin E.V., Pikhtin N.A.
|
| Vol 51, No 5 (2017) |
On the photoconductivity of TlInSe2 |
|
|
Ismailov N.D., Abilov C.I., Gasanova M.S.
|
| Vol 50, No 6 (2016) |
On the photon annealing of silicon-implanted gallium-nitride layers |
|
|
Seleznev B.I., Moskalev G.Y., Fedorov D.G.
|
| Vol 53, No 7 (2019) |
On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide |
|
|
Kazanin M.M., Kaminski V.V., Grevtsev M.A.
|
| Vol 53, No 2 (2019) |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
|
|
Levin R.V., Nevedomskyi V.N., Bazhenov N.L., Zegrya G.G., Pushnyi B.V., Mizerov M.N.
|
| Vol 52, No 6 (2018) |
On the Possibility of the Propagation of Solitary Electromagnetic Waves in Bigraphene |
|
|
Kryuchkov S.V., Ionkina E.S., Kukhar E.I.
|
| Vol 53, No 6 (2019) |
On the Power Factor of Bismuth-Telluride-Based Alloys near Topological Phase Transitions at High Pressures |
|
|
Korobeinikov I.V., Morozova N.V., Lukyanova L.N., Usov O.A., Ovsyannikov S.V.
|
| Vol 50, No 1 (2016) |
On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys |
|
|
Danylchuk S.P., Myronchuk G.L., Mozolyuk M.Y., Bozhko V.V.
|
| Vol 50, No 9 (2016) |
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions |
|
|
Veselov D.A., Shashkin I.S., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Rastegaeva M.G., Slipchenko S.O., Bechvay E.A., Strelets V.A., Shamakhov V.V., Tarasov I.S.
|
| Vol 53, No 11 (2019) |
On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique |
|
|
Svit K.A., Zhuravlev K.S.
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